■ PIN PHOTO DIODE PP403 ■ Absolute Maximum Rating Ta = 25°C Power Dissipation Reverse Voltage Operating Temperature Storage Temperature Pd VR Topr Tstg PP403 75 30 -30~+85 -30~+100 Units mW V °C °C Part No. ■ Electro-Optical Characteristics Photo Current Part No. PP403 Units Ta = 25°C Response Time tr . tf Ip Capacitance ※1 Dark Current Peak Wavelength ID λp CT Photo Sensitivity S TYP VR Ee TYP VR RL TYP VR MAX VR TYP VR TYP VR 1.5 5 0.5 20 10 1,000 7 10 10 10 950 0 0.64 5 µA V mW/cm2 ns V Ω pF V nA V nm V A/W V ※1 f=1MHz ■ Package Dimensions Unit : mm ■ Spatial Distribution Ta = 25°C φ3.8±0.2 4±0.2 φ3±0.2 □ (2.5) 5.7±0.3 0.6MAX. 30° 15.5MIN. 1.5±0.2 1MAX. 17.5MIN. 0° 60° 0.4±0.1 90° 30° 0.5 60° 90° ■ PIN PHOTO DIODE PP403 ■ Radiant Illumination vs. Relative Photo Current 10-1 10-2 0.01 0.1 1.0 1.8 1.6 1.4 1.2 0 10 Radiant Illumination Ee (mW/cm2) ■ Ambient Temperature vs. Relative Photo Current 0 25 50 60 40 20 Ambient Temperature Ta (˚C) 80 60 40 20 0 400 600 800 1000 1200 Wave Length λ (nm) 25 50 75 100 ■ Reverse Voltage vs. Terminal Capacitance Terminal Capacitance CT (pF) Relative Sensitivity (%) 100 0 Ambient Temperature Ta (˚C) VR= 0V Ta = 25℃ Ta = 25℃ 100 10 1 0.1 20 1 10 Reverse Voltage VR (V) 30 ■ Ambient Temperature vs. Dark Current VR= 10V 10-6 80 0 -25 75 100 ■ Spectral Sensitivity Characteristics 10 Reverse Voltage VR (V) 100 0.5 -25 10-10 0 10 15 20 25 30 35 ■ Ambient Temperature vs. Power Dissipation Power Dissipation P (mW) Relative Photo Current Ip 1.0 10-9 Reverse Voltage VR (V) VR= 5V 1.5 5 Dark Current ID (A) 10-0 Ta = 25℃ 10-8 Dark Current ID (A) Photo Current Ip (µA) Relative Photo Current Ip Ee= 0.5mW/cm2 Ta = 25℃ Ta = 25℃ 101 ■ Reverse Voltage vs. Dark Current ■ Reverse Voltage vs. Photo Current 100 10-8 10-10 10-12 -25 0 25 50 75 100 Ambient Temperature Ta (˚C)