PANASONIC PNZ3112

PIN Photodiodes
PNZ3112
PIN Photodiode
Unit : mm
For optical control systems
1.8±0.3
0.8±0.2
0.6±0.1
5.0±0.1
2.54±0.1
4
3
1.0±0.1
Features
High sensitivity and low dark current
Good positional linearity
Small plastic package
5˚
13.5±1.0
4.0±0.1
1.0±0.3
1.0±0.3
5˚
For one-dimensional light-point position detection
Adoption of visible light cutoff resin
1.0±0.1
4-0.6 +0.1
–0.2
4-0.5±0.15
1
10˚
10˚
5˚
5˚
Absolute Maximum Ratings (Ta = 25˚C)
Symbol
Ratings
Unit
Reverse voltage (DC)
VR
30
V
Power dissipation
PD
30
mW
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
–30 to +100
˚C
1: Anode A1
2: Common cathode
3: Anode A2
4: Common cathode
Dimensions of detection area
Unit : mm
3.0
2.5
1.3
1.0
Parameter
0.2 +0.1
–0.05
2
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
Dark current
ID
VR = 1V
Photo current
IL
VR = 1V, L = 1000 lx*1
λP
Peak sensitivity wavelength
min
typ
max
16
20
µA
2
Unit
nA
VR = 1V
940
nm
tr, tf*2
VR = 1V, RL = 1kΩ
10
µs
Capacitance between pins
Ct
VR = 1V, f = 1MHz
10
pF
Resistance between electrodes
RS*3
VR = 1V, Va = 0.5V
120
kΩ
Gradient of position signal
a*4
VR = 1V
0.08
Response time
*1 I
L = I1 + I2
Note: I1 and I2 are the photoelectric currents of anodes A1 and A2.
White tungsten lamp light source (color temperature T = 2856K)
*2 GaAs light emitting diode light source ( λ = 800nm)
*3 V is the potential difference between anodes A1 and A2.
a
*4 a = | (I –I )/(I +I ) |
1 2
1 2
Note :Incident light is at the position 100 µm from the reference position.
The reference position is the position where I1 = I2.
1
PNZ3112
PIN Photodiodes
IL — L
20
10
IL — Ta
160
VR = 1V
Ta = 25˚C
T = 2856K
VR = 1V
L = 1000 lx
T = 2856K
IL (%)
140
10
1
120
100
Relative photo current
30
10 2
IL (µA)
10 3
Photo current
Power dissipation
PD (mW)
PD — Ta
40
80
60
40
20
0
– 30
0
20
40
60
Ambient temperature
80
10 –1
10 2
100
10 3
Ta (˚C )
120
80
80
100
Ta (˚C )
Spectral sensitivity characteristics
VR = 1V
Ta = 25˚C
S (%)
80
1
10 –1
60
10 –2
40
20
10 –3
0
8
16
24
10 –4
– 40 – 20
32
VR (V)
0
20
40
60
Ambient temperature
RS — Ta
80
0
600
100
700
800
900
1000 1100 1200
Wavelength λ (nm)
Ta (˚C )
Ct — VR
tr , tf — RL
10 3
320
160
80
0
– 40 – 20
0
20
40
Ambient temperature
60
80
Ta (˚C )
100
tr , tf (µs)
50Ω
Va
Sig.
OUT
RL
tr
td
90%
10%
tf
,
Capacitance between pins
240
10 2
Rise time, Fall time
Ct (pF)
Sig.IN
RS (kΩ)
60
100
Relative sensitivity
ID (nA)
Dark current
160
Reverse voltage
Resistance between electrodes
40
10
40
2
20
VR = 1V
200
ID (pA)
0
Ambient temperature
10 2
Ta = 25˚C
Dark current
0
– 40 – 20
10 5
L (lx)
ID — Ta
ID — VR
240
0
10 4
Illuminance
10
1
10 3
10 2
VR = 1V
10
1
10 –1
10 –1
1
Reverse voltage
10
VR (V)
10 2
10 –1
10 –2
Ta = 25˚C
10 –1
1
10
External load resistance
10 2
10 3
RL (kΩ)