MICROSEMI 2N5663

TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/454
Devices
2N5660
Qualified Level
2N5661
2N5662
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
VCEO
VCBO
VCER
VEBO
IB
IC
@ TA = +250C
@ TC = +1000C
Operating & Storage Junction Temperature Range
Total Power Dissipation
JAN, JANTX
JANTXV
2N5663
PT
TJ, Tstg
2N5660 2N5661
2N5662 2N5663
200
300
250
400
250
400
6.0
0.5
2.0
2N5660 2N5662
2N5661 2N5663
2.0(1)
1.0(2)
(3)
20
15(4)
-65 to +200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
TO-66*
(TO-213AA)
2N5660, 2N5661
W
W
0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
RθJC
1)
2)
3)
4)
RθJA
Derate linearly 11.4 mW/0C for TA >+ 250C
Derate linearly 5.7 mW/0C for TA > +250C
Derate linearly 200 mW/0C for TC > +1000C
Derate linearly 150 mW/0C for TC > +1000C
2N5660
2N5661
2N5662
2N5663
5.0
87.5
6.67
145.8
Unit
0
C/W
TO-5*
2N5662, 2N5663
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
2N5660, 2N5662
2N5661, 2N5663
V(BR)CEO
200
300
Vdc
2N5660, 2N5662
2N5661, 2N5663
V(BR)CER
250
400
6.0
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Breakdown Voltage
IC = 10 mAdc, RBE = 100Ω
Emitter-Base Breakdown Voltage
IE = 10 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
V(BR)EBO
Vdc
120101
Page 1 of 2
2N5660, 2N5661, 2N5662, 2N5663 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Collector-Emitter Cutoff Current
VCE = 200 Vdc
VCE = 300 Vdc
Collector-Base Cutoff Current
VCB = 200 Vdc
VCB = 250 Vdc
VCB = 300 Vdc
VCB = 400 Vdc
Symbol
2N5660, 2N5662
2N5661, 2N5663
2N5660, 2N5662
2N5660, 2N5662
2N5661, 2N5663
2N5661, 2N5663
Min.
Max.
Unit
ICES
0.2
0.2
µAdc
µAdc
ICBO
0.1
1.0
0.1
1.0
µAdc
mAdc
µAdc
mAdc
ON CHARACTERISTICS (5)
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 2.0 Vdc
IC = 0.5 Adc, VCE = 5.0 Vdc
IC = 1.0 Adc, VCE = 5.0 Vdc
IC = 2.0 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 2.0 Adc, IB = 0.4 Adc
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 2.0 Adc, IB = 0.4 Adc
2N5660, 2N5662
2N5661, 2N5663
2N5660, 2N5662
2N5661, 2N5663
All Types
All Types
hFE
40
25
40
25
15
5.0
120
75
VCE(sat)
0.4
0.8
Vdc
VBE(sat)
1.2
1.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.1 Adc, VCE = 5.0 Vdc, f = 10 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
2.0
7.0
45
pF
on
0.25
0.25
µs
off
0.85
1.2
µs
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 100 Vdc; IC = 0.5 Adc; IB1 = 15 Adc
2N5660, 2N5662
VCC = 100 Vdc; IC = 0.5 Adc; IB1 = 25 Adc
2N5661, 2N5663
Turn-Off Time
VCC = 100 Vdc; IC = 0.5 Adc; IB1 = -IB2 = 15 Adc 2N5660, 2N5662
VCC = 100 Vdc; IC = 0.5 Adc; IB1 = -IB2 = 25 Adc 2N5661, 2N5663
t
t
SAFE OPERATING AREA
DC Tests
TC = +1000C, 1 Cycle, t ≥ 1.0 s
Test 1
VCE = 10 Vdc, IC = 2.0 Adc
2N5660, 2N5661
VCE = 7.5 Vdc, IC = 2.0 Adc
2N5662, 2N5663
Test 2
VCE = 40 Vdc, IC = 500 mAdc
2N5660, 2N5661
VCE = 25 Vdc, IC = 600 mAdc
2N5662, 2N5663
Test 3
VCE = 200 Vdc, IC = 36 mAdc
2N5660
VCE = 200 Vdc, IC = 27 mAdc
2N5662
Test 4
VCE = 300 Vdc, IC = 19 mAdc
2N5661
VCE = 300 Vdc, IC = 14 mAdc
2N5663
(5) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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