Product Description STQ-2016-3 STQ-2016-3Z Pb The Sirenza Microdevices STQ-2016-3 is a direct quadrature modulator targeted for use in W-CDMA applications. This device features a 700-2500 MHz operating frequency band, excellent carrier and sideband suppression, and a low broadband noise floor. 700-2500 MHz Direct Quadrature Modulator The STQ-2016-3 uses silicon germanium (SiGe) device technology and delivers a typical channel power of -11 dBm with adjacent channel power less than -65 dBc. A digital input shut-down feature is included that, when enabled, attenuates the output by 60 dB. The device is packaged in an industry standard 16 pin TSSOP with exposed paddle for superb RF and thermal ground. The STQ-2016-3Z is packaged in a RoHs compliant and Green 16-pin TSSOP with matte tin finish. 16 pin TSSOP with Exposed Ground Pad Package Footprint: 0.197 x 0.252 inches, (5.0 x 6.4 mm) Package Height: 0.039 inches (1.0 mm) Product Features • Functional Block Diagram BBQP 1 16 BBQN VCC 2 15 VCC VEE 3 14 VEE LOP 4 13 RFP LON 5 12 RFN VEE 6 11 VEE SD 7 10 VCC BBIP 8 9 BBIN LO QUADRATURE GENERATOR RoHS Compliant & Green Package Excellent carrier feedthrough, -40 dBm constant with output power • • • +4.0 dBm output P1dB Wide baseband input, DC - 500 MHz Superb phase accuracy and amplitude balance, ±0.5 deg./±0.2 dB • • Very low noise floor, -157 dBm/Hz Low ACP, -65 dBc Applications • W-CDMA Transmitters Product Specifications – W-CDMA Modulation (See Table 1 for Test Conditions) 869-894 MHz Parameters 1930-1990 MHz 2110-2170 MHz Comments Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Type* Channel Power Guaranteed through Output Power test as specified on Page 2 dBm -13 -11 -9 -14.5 -12.5 -10.5 -15 -13 -11 E Power Flatness Range across frequency band dB 0.25 0.5 0.25 0.5 0.25 0.5 C,D Adjacent Channel Power Guaranteed through IM3 test as specified on Page 2 dBc -65 -63 -65 -63 -65 -63 E First Alternate Channel Power dBc -75 -68 -73 -68 -73 -68 C,D Second Alternate Channel Power dBc -75 -68 -73 -68 -73 -68 C,D dBm/Hz -157 -156 -157 -156 -156 -155 C,D Broadband Noise Floor 60 MHz offset from carrier Signal-to-Noise Ratio Noise Offset: 60 MHz, Measured in a 3.84 MHz bandwidth dB 79 81 77 79 76 78 C,D *Type Definition: A = 100% tested (see Table 2 for conditions), B = Sample tested, C = Characterized on samples over temperature and Vcc, D = Design parameter, E = 100% tested through correlated CW parameter, I = Device input specification. The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104229 Rev B STQ-2016-3 Direct Quadrature Modulator Product Specifications – Parameter Variation, W-CDMA Modulation (See Table 1 for Test Conditions) Vcc (V) Parameters Comments Temp. (Deg. C) Unit 4.75 5.0 5.25 -40 +25 +85 Type* Channel Power dBm -13.05 -13 -12.95 -12.15 -13 -13.50 C,D Adjacent Channel Power dBc -64.3 -65 -65.4 -64.95 -65 -65.25 C,D First Alternate Channel Power dBc -72.9 -73 -72.9 -75.1 -73 -72.9 C,D Second Alternate Channel Power dBc -73.25 -73 -72.9 -75.4 -73 -72.5 C,D dBm/Hz -156.3 -156 -156 -155.4 C,D dB 77.8 78 78 77 C,D Broadband Noise Floor 60 MHz offset from carrier Signal-to-Noise Ratio Noise Offset: 60 MHz, Measured in a 3.84 MHz bandwidth -155.95 -156.25 77.8 79 Product Specifications – Parameter Variation, W-CDMA Modulation (See Table 1 for Test Conditions) LO Drive (dBm) Parameters Comments I/Q Drive (Vpp, Diff.**) Unit -1 +3 +7 1.0 1.7 2.5 Type* Channel Power dBm -13.05 -13 -12.95 -16.7 -13 -10.2 C,D Adjacent Channel Power dBc -65.75 -65 -64.5 -68.7 -65 -58.6 C,D First Alternate Channel Power dBc -72.3 -73 -73.1 -68.3 -73 -74.7 C,D Second Alternate Channel Power dBc -72.3 -73 -73.05 -67.3 -73 -73.7 C,D -156 -156.4 -156.7 -156 -155.2 C,D 78 78.3 75 78 80 C,D dBm/Hz -155.25 Broadband Noise Floor 60 MHz offset from carrier Signal-to-Noise Ratio Noise Offset: 60 MHz, Measured in a 3.84 MHz bandwidth dB 77.5 Product Specifications – RF Output, CW Modulation (See Table 2 for Test Conditions) 700-1000 MHz Unit Min. RF Frequency Range Parameters Additional Test Conditions/Comments MHz 700 Output Power dBm -13 RF Port Return Loss Matched to 50Ω (refer to schematics on pages 14 and 15) Output P1dB (I/Q inputs = 3.74 Vp-p differential typical) Carrier Feedthrough Two-tone baseband input @ 1.2Vp-p differential per tone Quadrature Phase Error I/Q Amplitude Balance Supply Voltage (Vcc) Supply Current Device Thermal Resistance dBm Junction-Case -10.5 Max. Min. 1000 1700 -9.0 -13 20 +3.0 dBm Sideband Suppression IM3 Suppression dB Typ. 1700-2500 MHz +4.0 -40 0 -34 Typ. -11.5 Max. Type* 2500 A -9 A,C 16 D +3.0 A,C -40 -32 A,C dB 34 40 34 40 A,C dB 46 50 47 53 A,C Deg. -2 ±0.5 +2 -2 ±0.5 +2 D dB -0.2 ±0.05 +0.2 -0.2 ±0.05 +0.2 D V +4.75 +5 +5 +5.25 I mA 60 73 73 86 A ºC/W 25 +5.25 +4.75 86 60 25 D *Type Definition: A = 100% tested (see Table 2 for conditions), B = Sample tested, C = Characterized on samples over temperature and Vcc, D = Design parameter, E = 100% tested through correlated CW parameter, I = Device input specification. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-104229 Rev B STQ-2016-3 Direct Quadrature Modulator Product Specifications – LO Input Parameters Additional Test Conditions/Comments LO Frequency LO Drive Level Recommended/Optimum Levels LO Port Return Loss matched to 50Ω (see schematic on page 12) Unit Min. MHz 700 dBm -1 Typ. +3 dB Max. Type* 2500 I +7 I 16 D Product Specifications – Shut-Down Input (Pin 7) Parameters Additional Test Conditions/Comments Unit Min. Typ. Max. 60 Type* Shut-Down Current mA 42 Shut-Down Attenuation dB 60 D A Shut-Down Pin Resistance @ 1MHz kohm 11.9 D Shut-Down Pin Capacitance @ 1MHz pF 5.2 D Shut-down Control Voltage Thresholds Shut-down disabled (normal operation) V 3.75 Vcc Shut-down enabled V 0.0 1.5 Shut-Down Settling Time ns <450 I I D Product Specifications – Baseband Modulation Input Parameters Additional Test Conditions/Comments Unit Min. Baseband Frequency Input -3dB bandwidth, baseband inputs terminated in 50 ohms Typ. Max. Type* MHz DC 500 I Baseband Input Resistance per pin kohms 4.4 D Baseband Input Capacitance per pin pF 0.5 D *Type Definition: A = 100% tested (see Table 2 for conditions), B = Sample tested, C = Characterized on samples over temperature and Vcc, D = Design parameter, E = 100 % tested through correlated CW parameter, I = Device input specification. **Peak-to-Peak Differential (Vpp, Diff.) Baseband Voltage Definition: 1.5 1 Vpp Vp I 0.5 0 0.5 1 V pp , Diff 1.5 0 100 200 300 400 Sa mp les 2⋅ Vpp 500 600 700 800 Plot of Single-Ended W-CDMA Baseband Signal (BBIP) 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-104229 Rev B STQ-2016-3 Direct Quadrature Modulator Table 1. W-CDMA Test Conditions Table 2. CW Test Conditions (Unless otherwise noted) (for all product specifications unless otherwise noted) VCC (pins 2,10,15) +5V VCC (pins 2,10,15) +5V TA +25ºC TA +25ºC Baseband Input (Pins 1, 8, 9, 16) 1.9V DC bias, W-CDMA Test Model 1 w/ 64 DPCH (PAR = 10.54), 850mVp-p per pin = 1.7 Vp-p differential drive, I and Q signals in quadrature Baseband Input (Pins 1, 8, 9, 16) 1.9V DC bias, 200kHz frequency, 300 mVp-p per pin = 600 mVp-p differential drive, I and Q signals in quadrature LO Input (Pins 4, 5) +4.0 dBm @ 2140 MHz LO Input (Pins 4, 5) -5 dBm @ 1960 MHz Pin Out Description Pin # Function 1 BBQP Description Additional Comments 2 VCC Positive supply (+5V) 3 VEE Ground 4 LOP Local oscillator input, positive terminal Nominal DC voltage is 2.0V. Input should be AC-coupled. 5 LON Local oscillator input, negative terminal Nominal DC voltage is 2.0V. Input should be AC-coupled. 6 VEE Ground 7 SD Q-channel baseband input, positive terminal Nominal DC bias voltage is 1.9V (biased internally) Logic high = normal operation; Logic Low = shut-down enabled. Shut-down control 8 BBIP I-channel baseband input, positive terminal Nominal DC bias voltage is 1.9V (biased internally) 9 BBIN I-channel baseband input, negative terminal Nominal DC bias voltage is 1.9V (biased internally) 10 VCC Positive supply (+5V) 11 VEE Ground 12 RFN RF output, negative terminal Nominal DC voltage is 2.4V. Output should be AC-coupled. 13 RFP RF output, positive terminal Nominal DC voltage is 2.4V. Output should be AC-coupled. 14 VEE Ground 15 VCC 16 BBQN Positive supply (+5V) Q-channel baseband input, negative terminal Nominal DC bias voltage is 1.9V (biased internally) Absolute Maximum Ratings Parameters Value Unit Supply Voltage (VCC) 6.0 VDC LO, RF Input (LOP, LON, RFP, RFN) +10 dBm 0 VDC Part Number Reel Size Min. Max. 7” 500 1000 7” 500 1000 Baseband Min Input Voltage (BBIP, BBIN, BBQP, BBQN) Baseband Max Input Voltage (BBIP, BBIN, BBQP, BBQN) Part Number Ordering Information Devices/Reel 3 VDC STQ-2016-3 Operating Temperature -40 to +85 ºC STQ-2016-3Z Storage Temperature -65 to +150 ºC Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. http://www.sirenza.com EDS-104229 Rev B STQ-2016-3 Direct Quadrature Modulator Typical Device Performance Graphs Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54 Broadband Noise Floor 15 0 Broadband Noise Floor (dBm/Hz) Broadband BroadbandNoise NoiseFloor Floor (dBm/Hz) (dBm/Hz) 15 0 150 152 15 2 154 15 4 156 15 6 158 15 8 6 6 15 2 15 4 15 6 15 8 4 2 0 2 4 2 0 2 LO Drive Level (dBm) LO Drive Level (d Bm) I/Q Drive = 1 Vpp, Diff. I/Q Drive = 1 V pp, Diff. I/Q Drive = 2 Vpp, Diff. I/Q Drive 2 VDiff. pp, Diff. I/Q Drive = 3= Vpp, I/Q Drive 3 VDiff. pp, Diff. I/Q Drive = 4= Vpp, 4 4 6 6 8 1 LO LO LO LO LO I/Q Drive = 4 V pp, Diff. Figure 1. Broadband Noise Floor (60 MHz Offset) Vs. LO Drive Level, LO Frequency = 2140 MHz. Broadband Noise Floor (dBm/Hz) Broadband Noise Floor (dBm/Hz) 3.5 4 157 157.5 4.7 4.8 4.9 5 Vcc (Vdc) 5.1 156.5 157 157.5 158 5.2 1.4 1.5 1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.) 1.9 Vcc = 4.75 V Vcc = 5.00 V Vcc = 5.25 V I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. Figure 3. Broadband Noise Floor (60 MHz Offset) Vs. Vcc, LO Drive = +4.0 dBm @ 2140 MHz. Figure 4. Broadband Noise Floor (60 MHz Offset) Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz. 156 Broadband Noise Floor (dBm/Hz) 156 Broadband Noise Floor (dBm/Hz) 2 2.5 3 IQ Drive Level (V pp, Diff.) -5 dBm -2 dBm -1 dBm +4 dB m +7 dB m 156 156.5 156.5 157 157.5 158 D rive = D rive = D rive = D rive = D rive = Figure 2. Broadband Noise Floor (60 MHz Offset) Vs. I/Q Drive Level, LO Frequency = 2140 MHz. 156 158 1.5 8 156.5 157 157.5 158 50 0 50 Temperature (Deg. C) 100 1.4 I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. Figure 5. Broadband Noise Floor (60 MHz Offset) Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021 1.5 1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.) 1.9 Temp = -40 Deg. C Temp = +25 Deg. C Temp = +85 Deg. C Figure 6. Broadband Noise Floor (60 MHz Offset) Vs. I/Q Drive Level, over Temperature, LO Drive = +4.0 dBm @ 2140 MHz. Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-104229 Rev B STQ-2016-3 Direct Quadrature Modulator Typical Device Performance Graphs Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54 14 9 14 9 14 7 14 7 Signal-to-Noise Ratio (dB) Signal-to-Noise Ratio (dB) Signal-to-Noise Ratio 14 5 14 3 14 1 13 9 14 5 14 3 14 1 13 9 13 7 13 7 13 5 13 5 6 4 I/Q I/Q I/Q I/Q Drive = Drive = Drive = Drive = 2 1 2 3 4 0 2 LO Drive Level (dBm) Vpp, Vpp, Vpp, Vpp, 4 6 D iff. D iff. D iff. D iff. Signal-to-Noise Ratio (dB) Signal-to-Noise Ratio (dB) 2 2.5 3 IQ Drive Level (V pp, Diff.) 3.5 4 -5 dBm -2 dBm -1 dBm +4 dB m +7 dB m 145 144 143 142 4.7 4.8 4.9 5 Vcc (Vdc) 5.1 144 143 142 141 5.2 1.4 1.5 1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.) 1.9 Vcc = 4.75 V Vcc = 5.00 V Vcc = 5.25 V I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. Figure 9. Signal-to-Noise Ratio Vs. Vcc, LO Drive = +4.0 dBm @ 2140 MHz. Figure 10. Signal-to-Noise Ratio Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz. 146 146 145 145 Signal-to-Noise Ratio (dB) Signal-to-Noise Ratio (dB) D rive = D rive = D rive = D rive = D rive = Figure 8. Signal-to-Noise Ratio Vs. I/Q Drive Level, LO Frequency = 2140 MHz. 145 144 143 142 141 1.5 LO LO LO LO LO Figure 7. Signal-to-Noise Ratio Vs. LO Drive Level, LO Frequency = 2140 MHz. 141 1 8 144 143 142 50 25 0 25 50 Temperature (Deg. C) 75 100 141 1.4 I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. Figure 11. Signal-to-Noise Ratio Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021 1.5 1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.) 1.9 Temp = -40 Deg. C Temp = +25 Deg. C Temp = +85 Deg. C Figure 12. Signal-to-Noise Ratio Vs. I/Q Drive Level, over Temperature, LO Drive = +4.0 dBm @ 2140 MHz. Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-104229 Rev B STQ-2016-3 Direct Quadrature Modulator Typical Device Performance Graphs Channel Power 1504 4 6 6 152 8 8 Channel Power (dBm) Channel Power (dBm) Broadband Noise Floor (dBm/Hz) Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54 10 154 12 14 156 12 14 16 16 158 18 6 6 10 18 4 2 0 2 4 2 0 2 LO Drive Level (dBm) LO Drive Level (d Bm) I/Q Drive = 1 Vpp, Diff. I/Q Drive = 1 V pp, Diff. I/Q Drive = 2 Vpp, Diff. I/Q Drive = 2 V pp, Diff. I/Q Drive = 3 Vpp, Diff. I/Q Drive = 3 V pp, Diff. I/Q Drive = 4 Vpp, Diff. 4 4 6 6 8 1 8 I/Q Drive = 4 V pp, Diff. 4 6 6 8 Channel Power (dBm) Channel Power (dBm) 4 10 12 14 16 2 2.5 3 IQ Drive Level (Vpp, D iff.) = = = = = 3.5 4 3.5 4 -5 dBm -2 dBm -1 dBm +4 dBm +7 dBm 8 10 12 14 16 18 21 00 21 20 I/Q I/Q I/Q I/Q Drive Drive Drive Drive =1 =2 =3 =4 2140 LO Frequency (MHz) V pp, V pp, V pp, V pp, 21 60 21 80 18 1 Diff. Diff. Diff. Diff. 1.5 2 2.5 3 IQ Drive Level (Vpp, Diff.) LO Freq. = 2110 M Hz LO Freq. = 2140 M Hz LO Freq. = 2170 M Hz Figure 15. Channel Power Vs. LO Frequency, LO Drive = +4.0 dBm. Figure 16. Channel Power Vs. I/Q Drive Level, over LO Frequency Range,LO Drive = +4.0 dBm. 11 11 12 12 Channel Power (dBm) Channel Power (dBm) D rive D rive D rive D rive D rive Figure 14. Channel Power Vs. I/Q Drive Level, LO Frequency = 2140 MHz. Figure 13. Channel Power Vs. LO Drive Level, LO Frequency = 2140 MHz. 13 13 14 14 15 1.5 LO LO LO LO LO 4.7 4.8 4.9 5 Vcc (Vdc) 5.1 15 5.2 1.4 Figure 17. Channel Power Vs. Vcc, LO Drive = +4.0 dBm @ 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021 1.5 1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.) 1.9 Vcc = 4.75 V Vcc = 5.00 V Vcc = 5.25 V I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. Figure 18. Channel Power Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz. Phone: (800) SMI-MMIC 7 http://www.sirenza.com EDS-104229 Rev B Typical Device Performance Graphs STQ-2016-3 Direct Quadrature Modulator Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54 10 11 152 12 Channel Power (dBm) ChannelNoise PowerFloor (dBm) Broadband (dBm/Hz) 150 11 154 13 156 14 12 13 14 15 158 15 6 50 4 25 2 0 2 0 LO Drive Level 25 (dBm) I/Q Drive = 1 Vpp,Temperature Diff. (Deg. C) 4 6 50 8 100 75 16 1 I/Q Drive Vpp, Diff. I/Q Drive == 21.5 Vpp, Diff. I/Q Drive Vpp, Diff. I/Q Drive == 31.7 Vpp, Diff. I/Q Drive = 4 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. 1.2 1.4 1.6 IQ Drive Level (Vpp, Diff.) 1.8 2 Temp. = -40 Deg. C Temp. = +25 Deg. C Temp. = +85 Deg. C Figure 19. Channel Power Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz. Figure 20. Channel Power Vs. I/Q Drive Level, over Temperature Range, LO Drive = +4.0 dBm @ 2140 MHz. Adjacent Channel Power 45 Adjacent Channel Power (dBc) Adjacent Channel Power (dBc) 45 50 55 60 50 55 60 65 65 70 70 6 4 I/Q I/Q I/Q I/Q 2 Drive Drive Drive Drive =1 =2 =3 =4 0 2 LO Drive Level (d Bm) V pp, V pp, V pp, V pp, 4 6 1.5 LO LO LO LO LO Diff. Diff. Diff. Diff. Figure 21. Adjacent Channel Power Vs. LO Drive Level, LO Frequency = 2140 MHz. D rive D rive D rive D rive D rive 2 2.5 3 IQ Drive Level (Vpp, D iff.) = = = = = 3.5 4 -5 dBm -2 dBm -1 dBm +4 dBm +7 dBm Figure 22. Adjacent Channel Power Vs. I/Q Drive Level, LO Frequency = 2140 MHz. 45 45 50 50 Adjacent Channel Power (dBc) Adjacent Channel Power (dBc) 1 8 55 60 65 55 60 65 70 21 00 21 20 I/Q I/Q I/Q I/Q Drive Drive Drive Drive =1 =2 =3 =4 2140 LO Frequency (MHz) V pp, V pp, V pp, V pp, 21 60 21 80 70 1 Diff. Diff. Diff. Diff. Figure 23. Adjacent Channel Power Vs. LO Frequency, LO Drive = +4.0 dBm. 303 S. Technology Court, Broomfield, CO 80021 1.5 2 2.5 3 IQ Drive Level (Vpp, Diff.) 3.5 4 LO Fre q. = 2110 MHz LO Fre q. = 2140 MHz LO Fre q. = 2170 MHz Figure 24. Adjacent Channel Power Vs. I/Q Drive Level, over LO Frequency Range, LO Drive = +4.0 dBm. Phone: (800) SMI-MMIC 8 http://www.sirenza.com EDS-104229 Rev B Typical Device Performance Graphs STQ-2016-3 Direct Quadrature Modulator 150 64 64 65 65 Adjacent Channel Power (dBc) Adjacent Channel Power(dBm/Hz) (dBc) Broadband Noise Floor Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54 152 66 154 67 156 68 67 68 158 69 66 6 4 4.7 2 0 2 LO Drive Level (dBm) 4.8 4.9 5 I/Q Drive = 1 Vpp, Diff. Vcc (Vdc) I/Q Drive = 2 Vpp, Diff. I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 3 Vpp, Diff. I/Q Drive = 1.7Diff. Vpp, Diff. I/Q Drive = 4 Vpp, 4 6 5.1 8 69 5.2 1.4 I/Q Drive = 1.9 Vpp, Diff. 1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.) 1.9 Figure 26. Adjacent Channel Power Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz. 64 64 65 65 Adjacent Channel Power (dBc) Adjacent Channel Power (dBc) Figure 25. Adjacent Channel Power Vs. Vcc, LO Drive = +4.0 dBm @ 2140 MHz. 66 67 68 69 1.5 Vcc = 4.75 V Vcc = 5.00 V Vcc = 5.25 V 66 67 68 50 25 0 25 50 Temperature (Deg. C ) 75 69 100 1.4 I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. 1.5 1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.) 1.9 Temp = -40 De g. C Temp = +25 De g. C Temp = +85 De g. C Figure 28. Adjacent Channel Power Vs. I/Q Drive Level, over Temperature Range, LO Drive = +4.0 dBm @ 2140 MHz. Figure 27. Adjacent Channel Power Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz. First Alternate Channel Power 60 First Alternate Channel Power (dBc) First Alternate Channel Power (dBc) 60 65 70 75 65 70 75 80 80 6 4 I/Q I/Q I/Q I/Q Drive Drive Drive Drive 2 =1 =2 =3 =4 0 2 LO Drive L evel (d Bm) V pp, V pp, V pp, V pp, 4 6 1 LO LO LO LO LO Diff. Diff. Diff. Diff. Figure 29. First Alternate Channel Power Vs. LO Drive Level, LO Frequency = 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021 1.5 2 2.5 3 IQ Drive Level (Vpp, D iff.) 8 D rive D rive D rive D rive D rive = = = = = 3.5 4 -5 dBm -2 dBm -1 dBm +4 dBm +7 dBm Figure 30. First Alternate Channel Power Vs. I/Q Drive Level, LO Frequency = 2140 MHz. Phone: (800) SMI-MMIC 9 http://www.sirenza.com EDS-104229 Rev B STQ-2016-3 Direct Quadrature Modulator Typical Device Performance Graphs Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54 60 First Alternate Channel Power (dBc) Broadband Noise FloorPower (dBm/Hz) First Alternate Channel (dBc) 15060 15265 15470 15675 158 80 6 21 00 4 2 0 2 21 20 2140 LO Drive Level (dBm) LO Frequency (MHz) I/Q Drive = 1 Vpp, Diff. I/Q Drive =1V pp, Diff. I/Q Drive = 2 Vpp, Diff. I/Q Drive =2V pp, Diff. I/Q Drive = 3 Vpp, Diff. I/Q Drive =3V pp, Diff. I/Q Drive = 4 Vpp, Diff. I/Q Drive = 4 V pp, Diff. 4 21 60 6 8 21 80 75 80 1 3.5 4 First Alternate Channel Power (dBc) 74 76 78 4.7 4.8 4.9 5 Vcc (Vdc) 5.1 72 74 76 78 80 5.2 1.4 1.5 1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.) 1.9 Vcc = 4.75 V Vcc = 5.00 V Vcc = 5.25 V I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. Figure 33. First Alternate Channel Power Vs. Vcc, LO Drive = +4.0 dBm @ 2140 MHz. Figure 34. First Alternate Channel Power Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz. 70 First Alternate Channel Power (dBc) 70 First Alternate Channel Power (dBc) 2 2.5 3 IQ Drive Level (Vpp, Diff.) 70 72 72 74 76 78 80 1.5 Figure 32. First Alternate Channel Power Vs. I/Q Drive Level, LO Drive = +4.0 dBm. 70 First Alternate Channel Power (dBc) 70 LO Freq. = 2110 MHz LO Freq. = 2140 MHz LO Freq. = 2170 MHz Figure 31. First Alternate Channel Power Vs. LO Frequency, LO Drive = +4.0 dBm. 80 65 50 25 0 25 50 Temperature (Deg. C ) 75 100 72 74 76 78 80 1.4 Figure 35. First Alternate Channel Power Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021 1.5 1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.) 1.9 Temp = -40 Deg. C Temp = +25 Deg. C Temp = +85 Deg. C I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. Figure 36. First Alternate Channel Power Vs. I/Q Drive Level, over Temperature Range, LO Drive = +4.0 dBm @ 2140 MHz. Phone: (800) SMI-MMIC 10 http://www.sirenza.com EDS-104229 Rev B Typical Device Performance Graphs STQ-2016-3 Direct Quadrature Modulator Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54 Second Alternate Channel Power 60 Second Alternate Channel Power (dBc) Second Alternate Channel Power (dBc) 60 65 70 75 80 85 4 2 Drive Drive Drive Drive =1 =2 =3 =4 0 2 LO Drive Level (d Bm) V pp, V pp, V pp, V pp, 4 6 80 1 1.5 LO LO LO LO LO Diff. Diff. Diff. Diff. D rive D rive D rive D rive D rive 2 2.5 3 IQ Drive Level (Vpp, D iff.) = = = = = 3.5 4 -5 dBm -2 dBm -1 dBm +4 dBm +7 dBm Figure 38. Second Alternate Channel Power Vs. I/Q Drive Level, LO Frequency = 2140 MHz. 60 60 Second Alternate Channel Power (dBc) Second Alternate Channel Power (dBc) 75 8 Figure 37. Second Alternate Channel Power Vs. LO Drive Level, LO Frequency = 2140 MHz. 65 70 75 80 85 21 00 21 20 I/Q I/Q I/Q I/Q Drive Drive Drive Drive =1 =2 =3 =4 2140 LO Frequency (MHz) V pp, V pp, V pp, V pp, 21 60 21 80 65 70 75 80 85 1 Diff. Diff. Diff. Diff. 1.5 2 2.5 3 IQ Drive Level (Vpp, Diff.) 3.5 4 LO Freq. = 2110 MHz LO Freq. = 2140 MHz LO Freq. = 2170 MHz Figure 39. Second Alternate Channel Power Vs. LO Frequency, LO Drive = +4.0 dBm. Figure 40. Second Alternate Channel Power Vs. I/Q Drive Level, LO Drive = +4.0 dBm. 70 Second Alternate Channel Power (dBc) 70 Second Alternate Channel Power (dBc) 70 85 6 I/Q I/Q I/Q I/Q 72 74 76 78 80 65 72 74 76 78 80 4.7 4.8 4.9 5 Vcc (Vdc) 5.1 5.2 1.4 I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. Figure 41. Second Alternate Channel Power Vs. Vcc, LO Drive = +4.0 dBm @ 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021 1.5 1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.) 1.9 Vcc = 4.75 V Vcc = 5.00 V Vcc = 5.25 V Figure 42. Second Alternate Channel Power Vs. I/Q Drive Level, over Vcc Range, LO Drive = +4.0 dBm @ 2140 MHz. Phone: (800) SMI-MMIC 11 http://www.sirenza.com EDS-104229 Rev B STQ-2016-3 Direct Quadrature Modulator Typical Device Performance Graphs Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH, Peak-to-Average Ratio = 10.54 70 Second Alternate Channel Power (dBc) Second Alternate Channel Power (dBc) 70 72 74 76 78 80 72 74 76 78 80 50 25 0 25 50 Temperature (Deg. C ) 75 100 1.4 1.5 1.6 1.7 1.8 IQ Drive Level (Vpp, Diff.) 1.9 Temp = -40 Deg. C Temp = +25 Deg. C Temp = +85 Deg. C I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. Figure 43. Second Alternate Channel Power Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz. Figure 44. Second Alternate Channel Power Vs. I/Q Drive Level, over Temperature Range, LO Drive = +4.0 dBm @ 2140 MHz. Typical Performance Distribution Over Multiple Lots 10 14 Mean = -66.33 Mean = -12.87 Std. Dev. = 1.737 Std. Dev. = 0.43 12 10 Percentage of Total Units (%) Percentage of Total Units (%) 8 8 6 6 4 4 2 2 0 16 15 14 13 Ch annel P ower (dB m) 12 11 0 10 Figure 45. Channel Power Distribution, 4 Production Lots, 120 Units. LO Drive = +4.0 dBm @ 2140 MHz. I/Q Drive Level = 1.7 Vpp, Diff. 75 70 65 Adjacent Ch ann el Po wer (dBc) 60 55 Figure 46. Adjacent Channel Power Distribution, 4 Production Lots, 120 Units. LO Drive = +4.0 dBm @ 2140 MHz. I/Q Drive Level = 1.7 Vpp, Diff. 35 25 Mean = -74.70 Mean = -74.6 Std. Dev. = 1.23 Std. Dev. = 1.28 30 Percentage of Total Units (%) Percentage of Total Units (%) 20 15 10 25 20 15 10 5 5 0 0 80 78 76 74 First Altern ate C han nel Power (dBc) 72 70 Figure 47. First Alternate Channel Power Distribution, 4 Production Lots, 120 Units. LO Drive = +4.0 dBm @ 2140 MHz. I/Q Drive Level = 1.7 Vpp, Diff. 303 S. Technology Court, Broomfield, CO 80021 80 78 76 74 Secon d Alternate Chann el P ower (dB c) 72 70 Figure 48. Second Alternate Channel Power Distribution, 4 Production Lots, 120 Units. LO Drive = +4.0 dBm @ 2140 MHz. I/Q Drive Level = 1.7 Vpp, Diff. Phone: (800) SMI-MMIC 12 http://www.sirenza.com EDS-104229 Rev B STQ-2016-3 Direct Quadrature Modulator 12 20 Mean = 143.78 Mean = -156.65 Std. Dev. = 0.52 Std. Dev. = 0.43 10 Percentage of Total Units (%) Percentage of Total Units (%) 15 10 8 6 4 5 2 0 160 15 9 15 8 157 156 Broad ban d N oise Flo or ( dBm/H z) 155 0 140 154 Figure 49. Broadband Noise Floor (60 MHz Offset) Distribution, 4 Production Lots, 120 Units. LO Drive = +4.0 dBm @ 2140 MHz. I/Q Drive Level = 1.7 Vpp, Diff. 14 1 142 14 3 144 14 5 Signal-to-Noise Ratio (dB) 146 14 7 14 8 Figure 50. Signal-to-Noise Ratio (60 MHz Offset) Distribution, 4 Production Lots, 120 Units. LO Drive = +4.0 dBm @ 2140 MHz. I/Q Drive Level = 1.7 Vpp, Diff. Package Dimensions (“16” Package) Dimensions in inches (mm) STQ 2016 (Z) XZZZZ Part # Lot # 0° 8° NOTES: 1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2. TOLERANCE ±.004" (0.1mm) UNLESS OTHERWISE SPECIFIED. 3. COPLANARITY: .004" (0.1mm) 4. CONTROLLING DIMENSION IS MILLIMETER, CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT. 5. FOLLOWED FROM JEDEC MO-153. Suggested PCB Pad Layout 0.049 (1.25) 0.012 (0.30) 0.118 (3.0) 0.024 (0.63) 0.014 (0.35) 0.118 (3.0) φ0.010 (0.25) via 0.028 (0.7) 0.035 (0.9) 0.272 (6.9) all units are in inches (mm) - Indicates metalization - vias connect pad to underlying ground plane 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 13 http://www.sirenza.com EDS-104229 Rev B STQ-2016-3 Direct Quadrature Modulator 700 – 1000 MHz Application Schematic BBQP VCC P8 BBQN P9 H2 1 2 R1 R7 L1 VCC VCC C3 C6 P10 LOin C4 5 8 T3 1 VCC U1 16 1 BBQP BBQN 15 2 VCC VCC 14 3 VEE VEE 13 4 LOP RFP STQ-2016 12 5 LON RFN 11 6 VEE VEE 10 7 VCC SD 9 8 BBIP BBIN 4 C5 C17 C9 C10 1 T4 5 P11 8 RFout C1 6 C18 Fully Assembled PCB VCC Shut-down H2 2.0" (50.8mm) Connect backside exposed paddle to RF/DC ground. 1 2 4 SH1 R9 R8 BBQP BBQN P9 P8 R10 VCC 1 2 H1 VCC 2.0" (50.8mm) BBIP P12 P13 BBIN C3 L1 T3 C6 C4 U1 C5 C17 R8 R9 LO In Shutdown GND R7 R1 P1 0 C9 C10 P11 T4 C16 C18 RF Out R10 H2 1 2 SH1 Note: Remove SH1 to enable modulated output. BBIP P12 P13 BBIN Bill of Materials (for 700 – 1000 MHz Evaluation Board P/N STQ-2016-3EVB-1) Component Designator Value U1 P8, P9, P10, P11, P12, P13 H1, H2 T3, T4 Qty Vendor Part Number Description 1 SMDI STQ-2016 SiGe Direct Quadrature Modulator 6 Johnson Components 142-0701-851 SMA connector, end launch with tab, for .062” thick board 2 AMP 640453-2 2-pin header, right angle 1:1 2 Panasonic EHF-FD1618 RF transformer, 700-1300MHz L1 1uH 1 Panasonic ELJ-FA1R0KF2 Inductor, 1210 footprint, ±10% tolerance R1, R7, R9, R10 200 ohm 4 Venkel CR1206-8W-2000T Resistor, 1206 footprint, ±1% tolerance R8 1 kohm 1 Venkel CR0603-16W-1001FT Resistor, 0603 footprint, ±1% tolerance C6, C18 33pF 2 Venkel C0603COG500-330JNE Capacitor, 0603 footprint, COG dielectric, ±5% tolerance C9, C17 1nF 2 Venkel C0603COG500-102JNE Capacitor, 0603 footprint, COG dielectric, ±5% tolerance C3 2.2uF 1 Venkel C1206Y5V160-225ZNE Capacitor, 1206 footprint, Y5V dielectric, 16V rating C4, C5, C10, C16 10pF 4 Venkel C0603COG500-100JNE Capacitor, 0603 footprint, COG dielectric, ±5% tolerance 1 3M 929950-00 Shunt for 2-pin header SH1 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 14 http://www.sirenza.com EDS-104229 Rev B STQ-2016-3 Direct Quadrature Modulator 1.7 – 2.5 GHz Application Schematic BBQP VCC P8 BBQN P9 H2 1 2 R1 R7 L1 VCC VCC C3 C6 P10 LOin C1 C4 5 8 T3 1 VCC U1 16 1 BBQP BBQN 15 2 VCC VCC 14 3 VEE VEE 13 4 LOP RFP STQ-2016 12 5 LON RFN 11 6 VEE VEE 10 7 VCC SD 9 8 BBIP BBIN 4 C5 C17 C9 C10 1 T4 5 P11 8 C16 RFout C2 C18 Fully Assembled PCB VCC Shut-down H2 SH1 R9 R8 2.0" (50.8mm) Connect backside exposed paddle to RF/DC ground. 1 2 4 R1 0 BBQP BBQN P9 P8 VCC 1 2 H1 VCC 2.0" (50.8mm) P12 BBIP P13 C3 L1 BBIN T3 C1 LO In Shutdown GND R7 R1 P10 C6 C4 C5 C17 R8 R9 P11 C9 C10 T4 C2 U1 C16 C18 RF Out R10 H2 1 2 SH1 Note: Remove SH1 to enable modulated output. BBIP P12 P13 BBIN Bill of Materials (for 1.7 – 2.5 GHz Evaluation Board P/N STQ-2016-3EVB-2) Component Designator Value U1 P8, P9, P10, P11, P12, P13 H1, H2 T3, T4 Qty Vendor Part Number Description 1 SMDI STQ-2016 SiGe Direct Quadrature Modulator 6 Johnson Components 142-0701-851 SMA connector, end launch with tab, for .062” thick board 2 AMP 640453-2 2-pin header, right angle 1:1 2 Panasonic EHF-FD1619 RF transformer, 1200-2200MHz L1 1uH 1 Panasonic ELJ-FA1R0KF2 Inductor, 1210 footprint, ±10% tolerance R1, R7, R9, R10 200 ohm 4 Venkel CR1206-8W-2000T Resistor, 1206 footprint, ±1% tolerance Resistor, 0603 footprint, ±1% tolerance R8 1 kohm 1 Venkel CR0603-16W-1001FT C1, C2 0.5pF 2 Venkel C0603COG500-0R5CNE Capacitor, 0603 footprint ±0.25pF tolerance C6, C18 6.8pF 2 Venkel C0603COG500-6R8CNE Capacitor, 0603 footprint, COG dielectric, ±0.25pF tol. C9, C17 1nF 2 Venkel C0603COG500-102JNE Capacitor, 0603 footprint, COG dielectric, ±5% tolerance C3 2.2uF 1 Venkel C1206Y5V160-225ZNE Capacitor, 1206 footprint, Y5V dielectric, 16V rating C4, C5, C10, C16 2.2pF 4 Venkel 0603 footprint, COG dielectric, ±0.25pF tolerC0603COG500-2R2CNE Capacitor, ance 1 3M 929950-00 SH1 303 S. Technology Court, Broomfield, CO 80021 Shunt for 2-pin header Phone: (800) SMI-MMIC 15 http://www.sirenza.com EDS-104229 Rev B STQ-2016-3 Direct Quadrature Modulator Figure 51. Measurement System for Modulation Performance Tests: Channel Power, Adjacent Channel Power, First Alternate Channel Power, Second Alternate Channel Power, and Broadband Noise Floor. Band-Pass Filter BW= 35 MHz Fc = 2140 MHz Sirenza STQ-2016-3 LO Agilent E4437B Signal Generator Telonic 1500-5-5EE Band-Pass Filter BW= 90 MHz Fc = 2080 MHz Amplifier +28 dB Gain K&L TF327-1 Mini-Circuits ZHL-1042J RFout QQ I I Noise Test Only Noise Test Only MiniCircuits SLP-1.9 Low-Pass Filters Fc = 1.9 MHz I I Q Rhode &Schwarz FSIQ7 Spectrum Analyzer Q Rhode &Schwarz AMIQI/QModulation Generator Figure 52. Measurement System for Continuous Wave Performance Tests: Output Power, P1dB, Carrier Feedthrough, Sideband Suppresion, and IM3 Suppression. 499 50 AD8138 5.11K 10K 2K VCC VCC 50 + VOCM - 1K 5.11K 200kHz sine 145mV amplitude 0 degree phase 499 24.9 BBI STQ-x016 -4dBm LO Match LO 200kHz sine 145mV amplitude +90 degree phase 499 5.11K 10K - for intermodulation tests, synthesizer set for 200kHz and 220kHz sine outputs on I and Q channels BBI+ 2K BBQ 50 DC levels for BBIN, BBIP, BBQN, BBQP are 1.9V nominal. The offset required to null carrier feedthrough is typically <20mV. 50 0 90 600mV p-p differential VCC VCC 2K 303 S. Technology Court, Broomfield, CO 80021 LOBBQ+ RF+ 0 90 RF- RF out RF Match BBQ- AD8138 50 +5V + VOCM - 1K 5.11K 24.9 BBILO+ 50 499 600mV p-p differential 2K Phone: (800) SMI-MMIC 16 http://www.sirenza.com EDS-104229 Rev B