MAXIM MAX2022ETX+TD

19-3572; Rev 0; 4/05
ILABLE
N KIT AVA
IO
T
A
U
L
A
EV
High-Dynamic-Range, Direct Upconversion
1500MHz to 2500MHz Quadrature Modulator
The MAX2022 low-noise, high-linearity, direct upconversion quadrature modulator is designed for single
and multicarrier 1800MHz to 2200MHz UMTS/WCDMA,
cdma2000®, and DCS/PCS base-station applications.
Direct upconversion architectures are advantageous
since they significantly reduce transmitter cost, part
count, and power consumption as compared to traditional IF-based double upconversion systems.
In addition to offering excellent linearity and noise performance, the MAX2022 also yields a high level of component integration. This device includes two matched
passive mixers for modulating in-phase and quadrature
signals, three LO mixer amplifier drivers, and an LO
quadrature splitter. On-chip baluns are also integrated to
allow for single-ended RF and LO connections. As an
added feature, the baseband inputs have been matched
to allow for direct interfacing to the transmit DAC, thereby eliminating the need for costly I/Q buffer amplifiers.
Features
♦
♦
♦
♦
♦
♦
♦
1500MHz to 2500MHz RF Frequency Range
Meets Four-Carrier WCDMA 65dBc ACLR
+23.3dBm Typical OIP3
+51.5dBm Typical OIP2
45.7dBc Typical Sideband Suppression
-40dBm Typical LO Leakage
-173.2dBm/Hz Typical Output Noise, Eliminating
the Need for an RF Output Filter
♦ Broadband Baseband Input
♦ DC-Coupled Input Provides for Direct Launch
DAC Interface, Eliminating the Need for Costly I/Q
Buffer Amplifiers
Ordering Information
PART
PKG
CODE
TEMP RANGE
PIN-PACKAGE
MAX2022ETX
-40°C to +85°C
36 Thin QFN-EP*
T3666-2
(6mm x 6mm)
MAX2022ETX-T
-40°C to +85°C
36 Thin QFN-EP*
T3666-2
(6mm x 6mm)
Single and Multicarrier WCDMA/UMTS Base
Stations
MAX2022ETX+D
-40°C to +85°C
36 Thin QFN-EP*
T3666-2
(6mm x 6mm)
Single and Multicarrier cdmaOne™ and cdma2000
Base Stations
MAX2022ETX+TD -40°C to +85°C
36 Thin QFN-EP*
T3666-2
(6mm x 6mm)
Applications
Single and Multicarrier DCS 1800/PCS 1900 EDGE
Base Stations
PHS/PAS Base Stations
Predistortion Transmitters
Fixed Broadband Wireless Access
*EP = Exposed paddle. + = Lead free.
-T = Tape-and-reel package.
WCDMA, ACLR, ALTCLR and Noise vs. RF
Output Power at 2140MHz for Single,
Two, and Four Carriers
-60
Private Mobile Radio
-62
Military Systems
-64
Digital and Spread-Spectrum Communication
Systems
cdma2000 is a registered trademark of Telecommunications
Industry Association.
ACLR AND ALT CLR (dBc)
Wireless Local Loop
Microwave Links
D = Dry pack.
-125
4C ADJ
4C ALT
-135
-66
-68
-145
2C ADJ
-70
1C ADJ
-72
-155
4C 2C
-74
2C ALT
1C ALT
-76
-165
1C
-78
NOISE FLOOR
-80
-175
-50
cdmaOne is a trademark of CDMA Development Group.
NOISE FLOOR (dBm/Hz)
The MAX2022 operates from a single +5V supply. It is
available in a compact 36-pin thin QFN package (6mm
x 6mm) with an exposed paddle. Electrical performance is guaranteed over the extended -40°C to
+85°C temperature range.
-40
-30
-20
-10
0
RF OUTPUT POWER PER CARRIER (dBm)
________________________________________________________________ Maxim Integrated Products
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
1
MAX2022
General Description
MAX2022
High-Dynamic-Range, Direct Upconversion
1500MHz to 2500MHz Quadrature Modulator
ABSOLUTE MAXIMUM RATINGS
VCC_ to GND ........................................................-0.3V to +5.5V
COMP .............................................................................0 to VCC
BBIP, BBIN, BBQP, BBQN to GND ............-2.5V to (VCC + 0.3V)
LO, RFOUT to GND Maximum Current ...............................50mA
Baseband Differential I/Q Input Power (Note A) ............+20dBm
LO Input Power...............................................................+10dBm
RBIASLO1 Maximum Current .............................................10mA
RBIASLO2 Maximum Current .............................................10mA
RBIASLO3 Maximum Current .............................................10mA
θJA (without air flow) ..........................................…………34°C/W
θJA (2.5m/s air flow) .........................................................28°C/W
θJC (junction to exposed paddle) ...................................8.5°C/W
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering 10s, non-lead free)...........+245°C
Lead Temperature (soldering 10s, lead free) ..................+260°C
Note A: Maximum reliable continuous power applied to the baseband differential port is +12dBm from an external 100Ω source.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(MAX2022 Typical Application Circuit, VCC = +4.75V to +5.25V, GND = 0V, I/Q inputs terminated into 100Ω differential, LO input terminated into 50Ω, RF output terminated into 50Ω, R1 = 432Ω, R2 = 562Ω, R3 = 301Ω, TC = -40°C to +85°C, unless otherwise noted.
Typical values are at VCC = +5V, TC = +25°C, unless otherwise noted.) (Note 1)
PARAMETER
Supply Voltage
Total Supply Current
SYMBOL
CONDITIONS
VCC
ITOTAL
MIN
TYP
MAX
UNITS
4.75
5.00
5.25
V
Pins 3, 13, 15, 31, 33 all connected to VCC
Total Power Dissipation
292
342
mA
1460
1796
mW
AC ELECTRICAL CHARACTERISTICS
(MAX2022 Typical Application Circuit, VCC = +4.75V to +5.25V, GND = 0V, I/Q differential inputs driven from a 100Ω DC-coupled
source, 0V common-mode input, PLO = 0dBm, 1900MHz ≤ fLO ≤ 2200MHz, 50Ω LO and RF system impedance, R1 = 432Ω, R2 =
562Ω, R3 = 301Ω, TC = -40°C to +85°C. Typical values are at VCC = +5V, VBBI = 109mVP-P differential, VBBQ = 109mVP-P differential,
fIQ = 1MHz, TC = +25°C, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
BASEBAND INPUT
Baseband Input Differential
Impedance
fIQ = 1MHz
BB Common-Mode Input Voltage
Range
Output Power
-2.5
TC = +25°C
Ω
43
0
-24
+1.5
V
dBm
RF OUTPUTS (fLO = 1960MHz)
Output IP3
VBBI, VBBQ = 547mVP-P differential per tone
into 50Ω,
fBB1 = 1.8MHz,
fBB2 = 1.9MHz
21.8
dBm
Output IP2
VBBI, VBBQ = 547mVP-P differential per tone
into 50Ω,
fBB1 = 1.8MHz,
fBB2 = 1.9MHz
48.9
dBm
-20.5
dBm
Output Power
2
_______________________________________________________________________________________
High-Dynamic-Range, Direct Upconversion
1500MHz to 2500MHz Quadrature Modulator
(MAX2022 Typical Application Circuit, VCC = +4.75V to +5.25V, GND = 0V, I/Q differential inputs driven from a 100Ω DC-coupled
source, 0V common-mode input, PLO = 0dBm, 1900MHz ≤ fLO ≤ 2200MHz, 50Ω LO and RF system impedance, R1 = 432Ω, R2 =
562Ω, R3 = 301Ω, TC = -40°C to +85°C. Typical values are at VCC = +5V, VBBI = 109mVP-P differential, VBBQ = 109mVP-P differential,
fIQ = 1MHz, TC = +25°C, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
Output Power Variation Over
Temperature
TC = -40°C to +85°C
Output-Power Flatness
MIN
TYP
MAX
UNITS
-0.004
dB/°C
fLO = 1960MHz, sweep fBB,
PRF flatness for fBB from 1MHz to 50MHz
0.6
dB
ACLR (1st Adjacent Channel
5MHz Offset)
Single-carrier WCDMA (Note 2),
RFOUT = -16dBm
70
dBc
LO Leakage
No external calibration, with each baseband
input terminated in 50Ω
-46.7
dBm
Sideband Suppression
No external calibration
47.3
dBc
15.3
dB
-173.4
dBm/Hz
10.1
dB
Output IP3
VBBI, VBBQ = 547mVP-P differential per tone
into 50Ω,
fBB1 = 1.8MHz,
fBB2 = 1.9MHz
23.3
dBm
Output IP2
VBBI, VBBQ = 547mVP-P differential per tone
into 50Ω,
fBB1 = 1.8MHz,
fBB2 = 1.9MHZ
51.5
dBm
-20.8
dBm
-0.005
dB/°C
0.32
dB
70
dBc
Output Return Loss
Output Noise Density
fmeas = 2060MHz, with each baseband
input terminated in 50Ω
LO Input Return Loss
RF OUTPUTS (fLO = 2140MHz)
Output Power
Output Power Variation Over
Temperature
TC = -40°C to +85°C
Output-Power Flatness
fLO = 2140MHz,
sweep fBB,
PRF flatness for fBB from 1MHz to 50MHz
ACLR (1st Adjacent Channel
5MHz Offset)
Single-carrier WCDMA (Note 2),
RFOUT = -16dBm, fLO = 2GHz
LO Leakage
No external calibration, with each baseband
input terminated in 50Ω
-40.4
dBm
Sideband Suppression
No external calibration
45.7
dBc
13.5
dB
-173.2
dBm/Hz
18.1
dB
Output Return Loss
Output Noise Density
LO Input Return Loss
fmeas = 2240MHz, with each baseband
input terminated in 50Ω
Note 1: TC is the temperature on the exposed paddle.
Note 2: Single-carrier WCDMA peak-to-average ratio of 10.5dB for 0.1% complimentary cumulative distribution function.
_______________________________________________________________________________________
3
MAX2022
AC ELECTRICAL CHARACTERISTICS (continued)
Typical Operating Characteristics
(MAX2022 Typical Application Circuit, 50Ω LO input, R1 = 432Ω, R2 = 562Ω, R3 = 301Ω, VCC = +5V, PLO = 0dBm, VIFI = VIFQ =
109mVP-P differential, fIQ = 1MHz, I/Q differential inputs driven from a 100Ω DC-coupled source, common-mode input from 0V, TC =
+25°C, unless otherwise noted.)
ACLR vs. OUTPUT POWER
-72
ALTERNATE CHANNEL
-74
-66
-68
ADJACENT CHANNEL
-70
-72
-74
-68
-72
-74
ALTERNATE CHANNEL
-76
-78
-78
-78
-80
-80
-80
-10
0
-40
-30
-20
-10
0
FOUR CARRIER
-50
-40
OUTPUT POWER (dBm)
OUTPUT POWER vs. LO FREQUENCY
OUTPUT POWER vs. LO FREQUENCY
-2
MAX2022 toc04
-2
VI = VQ = 0.611VP-P DIFFERENTIAL
VI = VQ = 0.611VP-P DIFFERENTIAL
-3
OUTPUT POWER (dBm)
-3
-4
PLO = -3dBm, 0dBm, +3dBm
-5
-6
TC = +25°C
-20
-10
OUTPUT POWER vs. LO FREQUENCY
-4
-5
-30
OUTPUT POWER (dBm)
-2
VI = VQ = 0.611VP-P DIFFERENTIAL
-3
OUTPUT POWER (dBm)
-20
OUTPUT POWER (dBm)
-76
MAX2022 toc05
-30
ALTERNATE CHANNEL
-70
-76
-40
OUTPUT POWER (dBm)
-64
ACLR (dB)
-70
ADJACENT CHANNEL
-62
-66
-68
ACLR (dB)
ACLR (dB)
-64
ADJACENT CHANNEL
-66
TWO CARRIER
-62
TC = -40°C
-6
MAX2022 toc06
-64
-60
MAX2022 toc02
MAX2022 toc01
SINGLE CARRIER
-62
ACLR vs. OUTPUT POWER
-60
MAX2022 toc03
ACLR vs. OUTPUT POWER
-60
-4
VCC = 4.75V, 5.0V, 5.25V
-5
-6
TC = +85°C
-7
-8
-7
-8
1.7
1.9
2.1
2.3
-8
1.5
1.7
1.9
2.1
2.3
2.5
1.5
1.7
1.9
2.1
2.3
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
LO LEAKAGE vs. LO FREQUENCY
LO LEAKAGE vs. LO FREQUENCY
LO LEAKAGE vs. LO FREQUENCY
-50
-70
TC = -40°C, +85°C
-30
-50
-70
PLO = 0dBm
BASEBAND INPUTS TERMINATED IN 50Ω
-10
LO LEAKAGE (dBm)
LO LEAKAGE (dBm)
PLO = -3dBm, +3dBm
-30
BASEBAND INPUTS TERMINATED IN 50Ω
-10
MAX2022 toc08
LO FREQUENCY (GHz)
BASEBAND INPUTS TERMINATED IN 50Ω
-10
2.5
MAX2022 toc07
1.5
-30
2.5
MAX2022 toc09
-7
LO LEAKAGE (dBm)
MAX2022
High-Dynamic-Range, Direct Upconversion
1500MHz to 2500MHz Quadrature Modulator
VCC = 4.75V, 5.0V
-50
-70
TC = +25°C
VCC = 5.25V
-90
-90
1.5
1.7
1.9
2.1
LO FREQUENCY (GHz)
4
2.3
2.5
-90
1.5
1.7
1.9
2.1
LO FREQUENCY (GHz)
2.3
2.5
1.5
1.7
1.9
2.1
LO FREQUENCY (GHz)
_______________________________________________________________________________________
2.3
2.5
High-Dynamic-Range, Direct Upconversion
1500MHz to 2500MHz Quadrature Modulator
fBB = 1MHz, VI = VQ = 112mVP-P
50
TC = -40°C, +25°C, +85°C
30
20
PLO = -3dBm
fBB = 1MHz, VI = VQ = 112mVP-P
50
IMAGE REJECTION (dB)
IMAGE REJECTION (dB)
40
IMAGE REJECTION vs. LO FREQUENCY
60
MAX2022 toc11
MAX2022 toc10
fBB = 1MHz, VI = VQ = 112mVP-P
50
IMAGE REJECTION (dB)
IMAGE REJECTION vs. LO FREQUENCY
60
40
PLO = 0dBm
30
20
MAX2022 toc12
IMAGE REJECTION vs. LO FREQUENCY
60
40
VCC = 4.75, 5.0V, 5.25V
30
20
PLO = +3dBm
10
10
0
0
1.7
1.9
2.1
2.3
2.5
0
1.5
1.7
1.9
2.1
2.3
2.5
1.5
OUTPUT NOISE vs. OUTPUT POWER
IF FLATNESS
vs. BASEBAND FREQUENCY
TC = +25°C
-165
TC = +85°C
-170
-164
TC = +85°C
TC = +25°C
-168
-15
-16
IF POWER (dBm)
-160
-172
-175
-176
-180
-180
-20
-15
-10
-5
0
10
5
MAX2022 toc15
PLO = 0dBm, fLO = 2140MHz
2.5
-14
AMX2022 toc14
AMX2022 toc13
TC = -40°C
-160
-156
fLO - fRF
-17
-18
-19
-20
fLO + fRF
-21
-22
-23
TC = -40°C
fLO = 1960MHz, PBB = -12dBm/PORT INTO 50Ω
-24
-25
-20
-15
-10
-5
0
5
0
10
20
40
60
80
100
BASEBAND FREQUENCY (MHz)
IF FLATNESS
vs. BASEBAND FREQUENCY
BASEBAND DIFFERENTIAL INPUT RESISTANCE
vs. BASEBAND FREQUENCY
BASEBAND DIFFERENTIAL INPUT RESISTANCE
vs. BASEBAND FREQUENCY
-17
fLO - fRF
-18
-19
-20
-21
fLO + fRF
-22
fLO = 2140MHz, PBB = -12dBm/PORT INTO 50Ω
-24
20
40
60
80
BASEBAND FREQUENCY (MHz)
100
44.5
VCC = 4.75V
44.0
43.5
43.0
VCC = 5.0V
42.5
VCC = 5.25V
42.0
41.5
fLO = 2GHz, PLO = 0dBm
41.0
0
20
40
60
80
BASEBAND FREQUENCY (MHz)
100
44.5
MAX2022 toc18
-16
45.0
MAX2022 toc17
MAX2022 toc16
-15
BASEBAND DIFFERENTIAL INPUT RESISTANCE (Ω)
OUTPUT POWER (dBm)
BASEBAND DIFFERENTIAL INPUT RESISTANCE (Ω)
OUTPUT POWER (dBm)
-14
IF POWER (dBm)
2.3
OUTPUT NOISE vs. OUTPUT POWER
-155
0
2.1
LO FREQUENCY (GHz)
PLO = 0dBm, fLO = 1960MHz
-23
1.9
LO FREQUENCY (GHz)
-150
-25
1.7
LO FREQUENCY (GHz)
OUTPUT NOISE (dBm/Hz)
1.5
OUTPUT NOISE (dBm/Hz)
10
44.0
PLO = +3dBm
43.5
PLO = -3dBm
43.0
PLO = 0dBm
fLO = 2GHz, VCC = 5.0V
42.5
0
20
40
60
80
100
BASEBAND FREQUENCY (MHz)
_______________________________________________________________________________________
5
MAX2022
Typical Operating Characteristics (continued)
(MAX2022 Typical Application Circuit, 50Ω LO input, R1 = 432Ω, R2 = 562Ω, R3 = 301Ω, VCC = +5V, PLO = 0dBm, VIFI = VIFQ =
109mVP-P differential, fIQ = 1MHz, I/Q differential inputs driven from a 100Ω DC-coupled source, common-mode input from 0V, TC =
+25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(MAX2022 Typical Application Circuit, 50Ω LO input, R1 = 432Ω, R2 = 562Ω, R3 = 301Ω, VCC = +5V, PLO = 0dBm, VIFI = VIFQ =
109mVP-P differential, fIQ = 1MHz, I/Q differential inputs driven from a 100Ω DC-coupled source, common-mode input from 0V, TC =
+25°C, unless otherwise noted.)
OUTPUT IP3
vs. LO FREQUENCY
20
5
15
10
5
2.1
2.3
2.5
1.7
1.9
2.1
2.3
2.5
1.5
1.7
1.9
2.1
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
OUTPUT IP3
vs. COMMON-MODE BASEBAND VOLTAGE
OUTPUT IP2
vs. LO FREQUENCY
OUTPUT IP2
vs. LO FREQUENCY
TC = +25°C
60
TC = +85°C
20
40
TC = -40°C
30
20
fLO = 1960MHz
10
VBB = 0.61VP-P DIFFERENTIAL PER TONE,
fBB1 = 1.8MHz, fBB2 = 1.9MHz
-2
-1
0
1
2
3
1.7
1.9
2.1
2.3
2.5
LO FREQUENCY (GHz)
OUTPUT IP2
vs. LO FREQUENCY
OUTPUT IP2
vs. COMMON-MODE BASEBAND VOLTAGE
50
OIP2 (dBm)
40
PLO = 0dBm
PLO = -3dBm
30
30
20
20
10
VBB = 0.61VP-P DIFFERENTIAL PER TONE,
fBB1 = 1.8MHz, fBB2 = 1.9MHz
10
1.5
1.7
1.9
2.1
LO FREQUENCY (GHz)
2.3
2.5
-3
-2
-1
0
1
1.9
2.1
2.3
2.5
LO LEAKAGE vs. LO FREQUENCY
NULLED AT fLO = 1960MHz AT
PRF = -18dBm
-20
2
COMMMON-MODE BASEBAND VOLTAGE (V)
-40
-60
-80
VBB = 0.61VP-P DIFFERENTIAL PER TONE,
fBB1 = 1.8MHz, fBB2 = 1.9MHz
0
0
1.7
0
LO LEAKAGE (dBm)
fLO = 2140MHz
40
1.5
MAX2022 toc26
fLO = 1960MHz
50
VBB = 0.61VP-P DIFFERENTIAL PER TONE,
fBB1 = 1.8MHz, fBB2 = 1.9MHz
LO FREQUENCY (GHz)
60
MAX2022 toc25
PLO = +3dBm
60
30
0
1.5
COMMMON-MODE BASEBAND VOLTAGE (V)
70
VCC = 5.25V
10
0
-3
40
20
10
0
2.5
50
OIP2 (dBm)
OIP2 (dBm)
fLO = 2140MHz
30
VCC = 4.75V, 5.0V
60
50
40
2.3
70
MAX2022 toc23
70
MAX2022 toc22
VBB = 0.61VP-P DIFFERENTIAL PER TONE,
fBB1 = 1.8MHz, fBB2 = 1.9MHz
50
OIP3 (dBm)
0
1.5
LO FREQUENCY (GHz)
60
6
VBB = 0.61VP-P DIFFERENTIAL PER TONE,
fBB1 = 1.8MHz, fBB2 = 1.9MHz
0
1.9
10
VBB = 0.61VP-P DIFFERENTIAL PER TONE,
fBB1 = 1.8MHz, fBB2 = 1.9MHz
0
1.7
15
5
VBB = 0.61VP-P DIFFERENTIAL PER TONE,
fBB1 = 1.8MHz, fBB2 = 1.9MHz
1.5
PLO = -3dBm
PLO = 0dBm, +3dBm
MAX2022 toc24
10
VCC = 5.0V, 5.25V
MAX2022 toc27
OIP3 (dBm)
OIP3 (dBm)
15
20
VCC = 4.75V
TC = -40°C, +25°C, +85°C
OIP3 (dBm)
20
25
MAX2022 toc20
25
MAX2022 toc19
25
OUTPUT IP3
vs. LO FREQUENCY
MAX2022 toc21
OUTPUT IP3
vs. LO FREQUENCY
OIP2 (dBm)
MAX2022
High-Dynamic-Range, Direct Upconversion
1500MHz to 2500MHz Quadrature Modulator
3
-100
1.945
1.950
1.955
1.960
1.965
LO FREQUENCY (GHz)
_______________________________________________________________________________________
1.970
1.975
High-Dynamic-Range, Direct Upconversion
1500MHz to 2500MHz Quadrature Modulator
-74
-76
-78
-80
NULLED AT -14dBm,
-18dBm, -22dBm
-82
-84
-76
NULLED AT -10dBm
-78
-80
NULLED AT -14dBm,
-18dBm, -22dBm
-82
-84
-10
-20
fLO = 1960MHz
-90
-40
-35
-30
-25
-20
-15
-90
-90
-10
-40
-35
-30
-25
-20
-15
LO LEAKAGE vs. fLO WITH
LO LEAKAGE NULLED AT SPECIFIC PRF
LO LEAKAGE vs. DIFFERENTIAL
DC OFFSET ON Q-SIDE
PRF = -18dBm, I-SIDE NULLED
fLO = 2140MHz fLO = 1960MHz
LO LEAKAGE (dBm)
-50
-30
-40
-50
-60
-60
-70
-70
1.85
60
-80
2.05
2.10
2.15
2.20
40
30
20
fBB1 = 1.8MHz, fBB2 = 9MHz, fLO = 1960MHz,
1.8MHz BASEBAND TONE NULLED AT
PRF = -20dBm
0
-15
-14
-13
-12
-11
-10
-9
-8
-30
-25
-20
-15
SIDEBAND SUPRESSION vs. PRF
RF PORT RETURN LOSS
vs. LO FREQUENCY
LO PORT RETURN LOSS
vs. LO FREQUENCY
1.8MHz
30
20
fBB1 = 1.8MHz, fBB2 = 9MHz, fLO = 2140MHz,
1.8MHz BASEBAND TONE NULLED AT
PRF = -20dBm
MAX2022 toc35
-5
-10
VCC = 4.75V, 5.0V, 5.25V
-15
-15
MODULATOR POUT (dBm)
VCC = 4.75V, 5.0V, 5.25V
-10
-15
-20
-30
-20
-20
-5
-25
0
-25
-10
0
LO PORT RETURN LOSS (dB)
9MHz
0
RF PORT RETURN LOSS (dB)
MAX2022 toc34
40
-30
9MHz
MODULATOR POUT (dBm)
50
2.10
1.8MHz
DC DIFFERENTIAL OFFSET ON Q-SIDE (mV)
60
10
2.05
LO FREQUENCY (GHz)
70
SIDEBAND SUPPRESSION (dB)
2.25
2.00
50
10
2.00
1.95
70
-80
-90
1.90
SIDEBAND SUPRESSION vs. PRF
MAX2022 toc32
-20
-10
fLO = 1960MHz, NULLED AT -10dBm PRF
LO FREQUENCY (GHz)
-40
MAX2022 toc31
fLO = 2140MHz, NULLED AT -10dBm PRF
-60
-80
OUTPUT POWER PRF (dBm)
-10
-50
-88
OUTPUT POWER PRF (dBm)
0
-40
MAX2022 toc36
-88
-30
-70
-86
SIDEBAND SUPPRESSION (dB)
-86
LO LEAKAGE (dBm)
-74
MAX2022 toc30
-72
LO LEAKAGE (dBm)
NULLED AT -10dBm
0
LO LEAKAGE (dBm)
-72
fLO = 2140Hz
-70
LO LEAKAGE vs. fLO WITH
LO LEAKAGE NULLED AT SPECIFIC PRF
MAX2022 toc29
-70
LO LEAKAGE (dBm)
-68
MAX2022 toc28
-68
LO LEAKAGE vs. PRF WITH
LO LEAKAGE NULLED AT SPECIFIC PRF
MAX2022 toc33
LO LEAKAGE vs. PRF WITH
LO LEAKAGE NULLED AT SPECIFIC PRF
-10
1.5
1.7
1.9
2.1
LO FREQUENCY (GHz)
2.3
2.5
1.5
1.7
1.9
2.1
2.3
2.5
LO FREQUENCY (GHz)
_______________________________________________________________________________________
7
MAX2022
Typical Operating Characteristics (continued)
(MAX2022 Typical Application Circuit, 50Ω LO input, R1 = 432Ω, R2 = 562Ω, R3 = 301Ω, VCC = +5V, PLO = 0dBm, VIFI = VIFQ =
109mVP-P differential, fIQ = 1MHz, I/Q differential inputs driven from a 100Ω DC-coupled source, common-mode input from 0V, TC =
+25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(MAX2022 Typical Application Circuit, 50Ω LO input, R1 = 432Ω, R2 = 562Ω, R3 = 301Ω, VCC = +5V, PLO = 0dBm, VIFI = VIFQ =
109mVP-P differential, fIQ = 1MHz, I/Q differential inputs driven from a 100Ω DC-coupled source, common-mode input from 0V, TC =
+25°C, unless otherwise noted.)
PLO = -3dBm
PLO = 0dBm
-25
-30
-35
PLO = +3dBm
-40
4
MAX2022 toc38
2
0
-2
-4
-6
6
4
2
0
-2
-4
-45
-8
-8
-10
-10
1.7
1.9
2.1
2.3
2.5
-2
3
8
18
13
TC = -40°C, +25°C, +85°C
-6
TC = -40°C, +25°C, +85°C
-50
-2
3
8
18
13
LO FREQUENCY (GHz)
INPUT POWER (PIN*) (dBm)
INPUT POWER (PIN*) (dBm)
TOTAL SUPPLY CURRENT
vs. TEMPERATURE (TC)
VCCLOA SUPPLY CURRENT
vs. TEMPERATURE (TC)
VCCLOI1 SUPPLY CURRENT
vs. TEMPERATURE (TC)
320
VCC = 5.25V
300
280
VCC = 5.0V
260
90
VCC = 5.25V
85
80
75
VCC = 5.0V
70
VCC = 4.75V
65
55
VCCLOI1 SUPPLY CURRENT (mA)
MAX2022 toc40
340
MAX2022 toc41
1.5
PLO = 2140MHz
*PIN IS THE AVAILABLE
POWER FROM ONE OF
THE FOUR 50Ω
BASEBAND SOURCES
8
MAX2022 toc42
-20
6
OUTPUT POWER vs. INPUT POWER (PIN*)
10
OUTPUT POWER (dBm)
-15
OUTPUT POWER (dBm)
-10
fLO = 1960MHz
*PIN IS THE AVAILABLE
POWER FROM ONE OF
THE FOUR 50Ω
BASEBAND SOURCES
8
VCCLOA SUPPLY CURRENT (mA)
LO PORT RETURN LOSS (dB)
-5
TOTAL SUPPLY CURRENT (mA)
OUTPUT POWER vs. INPUT POWER (PIN*)
10
MAX2022 toc37
0
MAX2022 toc39
LO PORT RETURN LOSS
vs. LO FREQUENCY
50
VCC = 5.25V
45
VCC = 5.0V
40
VCC = 4.75V
35
VCC = 4.75V
240
60
-15
10
35
60
85
10
35
60
-15
10
35
60
TEMPERATURE (°C)
VCCLOI2 SUPPLY CURRENT
vs. TEMPERATURE (TC)
VCCLOQ1 SUPPLY CURRENT
vs. TEMPERATURE (TC)
VCCLOQ2 SUPPLY CURRENT
vs. TEMPERATURE (TC)
55
VCC = 5.0V
VCC = 4.75V
45
VCC = 5.25V
45
VCC = 5.0V
40
VCC = 4.75V
35
30
-15
10
35
TEMPERATURE (°C)
60
85
VCC = 5.25V
65
85
MAX2022 toc45
50
70
VCCLOQ2 SUPPLY CURRENT (mA)
60
55
MAX2022 toc44
MAX2022 toc43
VCC = 5.25V
65
-40
-40
85
TEMPERATURE (°C)
40
8
-15
TEMPERATURE (°C)
70
50
30
-40
VCCLOQ1 SUPPLY CURRENT (mA)
-40
VCCLOI2 SUPPLY CURRENT (mA)
MAX2022
High-Dynamic-Range, Direct Upconversion
1500MHz to 2500MHz Quadrature Modulator
60
55
VCC = 5.0V
VCC = 4.75V
50
45
40
-40
-15
10
35
TEMPERATURE (°C)
60
85
-40
-15
10
35
TEMPERATURE (°C)
_______________________________________________________________________________________
60
85
High-Dynamic-Range, Direct Upconversion
1500MHz to 2500MHz Quadrature Modulator
PIN
NAME
1, 5, 9–12, 14,
16–19, 22, 24,
27–30, 32, 34,
35, 36
2
RBIASLO3
3
VCCLOA
GND
FUNCTION
Ground
3rd LO Amplifier Bias. Connect a 301Ω resistor to ground.
LO Input Buffer Amplifier Supply Voltage
4
LO
6
RBIASLO1
Local Oscillator Input. 50Ω input impedance.
1st LO Input Buffer Amplifier Bias. Connect a 432Ω resistor to ground.
7
COMP
Compensation Capacitor Input. Connect a 22pF capacitor to ground.
8
RBIASLO2
2nd LO Amplifier Bias. Connect a 562Ω resistor to ground.
13
VCCLOI1
I-Channel 1st LO Amplifier Supply Voltage
15
VCCLOI2
20
BBIP
Baseband In-Phase Positive Input
21
BBIN
Baseband In-Phase Negative Input
23
RFOUT
RF Output
25
BBQN
Baseband Quadrature Negative Input
26
BBQP
Baseband Quadrature Positive Input
31
VCCLOQ2
Q-Channel 1st LO Amplifier Supply Voltage
33
VCCLOQ1
Q-Channel 2nd LO Amplifier Supply Voltage
EP
GND
I-Channel 2nd LO Amplifier Supply Voltage
Exposed Ground Paddle. The exposed paddle MUST be soldered to the ground plane using
multiple vias.
Detailed Description
The MAX2022 is designed for upconverting differential
in-phase (I) and quadrature (Q) inputs from baseband to
a 1500MHz to 2500MHz RF frequency range.
Applications include single and multicarrier 1800MHz to
2200MHz UMTS/WCDMA, cdma2000, and DCS/PCS
base stations. Direct upconversion architectures are
advantageous since they significantly reduce transmitter
cost, part count, and power consumption as compared
to traditional IF-based double upconversion systems.
The MAX2022 integrates internal baluns, an LO buffer, a
phase splitter, two LO driver amplifiers, two matched
double-balanced passive mixers, and a wideband
quadrature combiner. Precision matching between the
in-phase and quadrature channels, and highly linear
mixers achieves excellent dynamic range, ACLR, 1dB
compression point, and LO and sideband suppression,
making it ideal for four-carrier WCDMA/UMTS operation.
LO Input Balun, LO Buffer, and
Phase Splitter
The MAX2022 requires a single-ended LO input, with a
nominal power of 0dBm. An internal low-loss balun at
the LO input converts the single-ended LO signal to a
differential signal at the LO buffer input. In addition, the
internal balun matches the buffer’s input impedance to
50Ω over the entire band of operation.
The output of the LO buffer goes through a phase splitter, which generates a second LO signal that is shifted
by 90° with respect to the original. The 0° and 90° LO
signals drive the I and Q mixers, respectively.
LO Driver
Following the phase splitter, the 0° and 90° LO signals
are each amplified by a two-stage amplifier to drive the
I and Q mixers. The amplifier boosts the level of the LO
signals to compensate for any changes in LO drive levels. The two-stage LO amplifier allows a wide input
power range for the LO drive. While a nominal LO
power of 0dBm is specified, the MAX2022 can tolerate
LO level swings from -3dBm to +3dBm.
I/Q Modulator
The MAX2022 modulator is composed of a pair of
matched double-balanced passive mixers and a balun.
The I and Q differential baseband inputs accept signals
from DC to beyond 100MHz with differential amplitudes
_______________________________________________________________________________________
9
MAX2022
Pin Description
MAX2022
High-Dynamic-Range, Direct Upconversion
1500MHz to 2500MHz Quadrature Modulator
up to 2VP-P differential (common-mode input equals 0V).
The wide input bandwidth allows for direct interface with
the baseband DACs. No active buffer circuitry between
the baseband DAC and the MAX2022 is required.
The I and Q signals directly modulate the 0° and 90°
LO signals and are upconverted to the RF frequency.
The outputs of the I and Q mixers are combined
through a balun to a singled-ended RF output.
above 3.5MHz. For GSM, connecting a 1nF capacitor
from COMP to ground is recommended for filtering out
noise and frequency offsets above 600kHz.
Baseband I/Q Input Drive
The MAX2022 I and Q baseband inputs should be driven differentially for best performance. The baseband
inputs have a 50Ω differential input impedance. The
optimum source impedance for the I and Q inputs is
100Ω differential. This source impedance will achieve
the optimal signal transfer to the I and Q inputs, and the
optimum output RF impedance match. The MAX2022
can accept input power levels of up to +12dBm on the I
and Q inputs. Operation with complex waveforms, such
as CDMA or WCDMA carriers, utilize input power levels
that are far lower. This lower power operation is made
necessary by the high peak-to-average ratios of these
complex waveforms. The peak signals must be kept
below the compression level of the MAX2022. The input
common-mode voltage should be confined to the -2V to
+1.5V DC range.
The MAX2022 is designed to interface directly with
Maxim high-speed DACs. This generates an ideal total
transmitter lineup, with minimal ancillary circuit elements.
Such DACs include the MAX5875 series of dual DACs,
and the MAX5895 dual interpolating DAC. These DACs
have ground-referenced differential current outputs.
Typical termination of each DAC output into a 50Ω load
Applications Information
LO Input Drive
The LO input of the MAX2022 requires a single-ended
drive at a 1500MHz to 2500MHz frequency. It is internally matched to 50Ω. An integrated balun converts the
singled-ended input signal to a differential signal at the
LO buffer differential input. An external DC-blocking
capacitor is the only external part required at this interface. The LO input power should be within the -3dBm
to +3dBm range.
COMP Pin
The COMP pin is used to provide additional lowpass filtering to the bias circuit noise. An external capacitor
can be used from the COMP pin to ground to reduce
the close-in noise of the modulator. For UMTS, connecting a 22pF capacitor from the COMP pin to ground is
recommended to filter out noise and frequency offsets
MAX5895
DUAL 16-BIT INTERP DAC
MAX2022
RF MODULATOR
50Ω
BBI
50Ω
FREQ
50Ω
0°
LO
I/Q GAIN AND
OFFSET ADJUST
50Ω
90°
∑
50Ω
FREQ
50Ω
BBQ
50Ω
Figure 1. MAX5895 DAC Interfaced with MAX2022
10
______________________________________________________________________________________
High-Dynamic-Range, Direct Upconversion
1500MHz to 2500MHz Quadrature Modulator
RF Output
The MAX2022 utilizes an internal passive mixer architecture. This enables a very low noise floor of
-173.2dBm/Hz for low-level signals, below about
-20dBm output power level. For higher output level signals, the noise floor will be determined by the internal
LO noise level at approximately -162dBc/Hz.
The I/Q input power levels and the insertion loss of the
device will determine the RF output power level. The
input power is the function of the delivered input I and
Q voltages to the internal 50Ω termination. For simple
sinusoidal baseband signals, a level of 89mVP-P differential on the I and the Q inputs results in an input power
level of -17dBm delivered to the I and Q internal 50Ω
terminations. This results in a -27dBm RF output power.
Generation of WCDMA Carriers
The MAX2022 quadrature modulator makes an ideal
signal source for the generation of multiple WCDMA
carriers. The combination of high OIP3 and exceptionally low output noise floor gives an unprecedented output dynamic range. The output dynamic range allows
the generation of four WCDMA carriers in the UMTS
band with a noise floor sufficiently low to meet the
3GPP specification requirements with no additional RF
filtering. This promotes an extremely simple and efficient transmitter lineup. Figure 2 illustrates a complete
transmitter lineup for a multicarrier WCDMA transmitter
in the UMTS band.
The MAX5895 dual interpolating-modulating DAC is
operated as a baseband signal generator. For generation of four carriers of WCDMA modulation, and digital
predistortion, an input data rate of 61.44 or
122.88Mbps can be used. The DAC can then be programmed to operate in x8 or x4 interpolation mode,
resulting in a 491.52Msps output sample rate. The
DAC will generate four carriers of WCDMA modulation
MAX5895
MAX2022
RF-MODULATOR
I
L-C FILTER
MAX2057
+12dB
I
I/Q GAIN AND
OFFSET ADJUST
∑
TX
OUTPUT
Q
Q
SYNTH
CLOCK
Figure 2. Complete Transmitter Lineup for a Multicarrier WCDMA in the UMTS Band
______________________________________________________________________________________
11
MAX2022
resistor to ground, and a 10mA nominal DC output current results in a 0.5V common-mode DC level into the
modulator I/Q inputs. The nominal signal level provided
by the DACs will be in the -12dBm range for a single
CDMA or WCDMA carrier, reducing to -18dBm per carrier for a four-carrier application.
The I/Q input bandwidth is greater than 50MHz at
-0.1dB response. The direct connection of the DAC to
the MAX2022 insures the maximum signal fidelity, with
no performance-limiting baseband amplifiers required.
The DAC output can be passed through a lowpass filter
to remove the image frequencies from the DAC’s output
response. The MAX5895 dual interpolating DAC can be
operated at interpolation rates up to x8. This has the
benefit of moving the DAC image frequencies to a very
high, remote frequency, easing the design of the baseband filters. The DAC’s output noise floor and interpolation filter stopband attenuation are sufficiently good to
insure that the 3GPP noise floor requirement is met for
large frequency offsets, 60MHz for example, with no filtering required on the RF output of the modulator.
Figure 1 illustrates the ease and efficiency of interfacing the MAX2022 with a Maxim DAC, in this case the
MAX5895 dual 16-bit interpolating-modulating DAC.
The MAX5895 DAC has programmable gain and differential offset controls built in. These can be used to optimize the LO leakage and sideband suppression of the
MAX2022 quadrature modulator.
MAX2022
High-Dynamic-Range, Direct Upconversion
1500MHz to 2500MHz Quadrature Modulator
with an ACLR typically greater than 77dB under these
conditions. The output power will be approximately
-18dBm per carrier, with a noise floor typically less
than -144dBc/Hz.
The MAX5895 DAC has built-in gain and offset fine
adjustments. These are programmable by a 3-wire serial logic interface. The gain adjustment can be used to
adjust the relative gains of the I and Q DAC outputs.
This feature can be used to improve the native sideband suppression of the MAX2022 quadrature modulator. The gain adjustment resolution of 0.01dB allows
sideband nulling down to approximately -60dB. The offset adjustment can similarly be used to adjust the offset
DC output of each I and Q DAC. These offsets can then
be used to improve the native LO leakage of the
MAX2022. The DAC resolution of 4 LSBs will yield
nulled LO leakage of typically less than -50dBc relative
to four-carrier output levels.
The DAC outputs must be filtered by baseband filters to
remove the image frequency signal components. The
baseband signals for four-carrier operation cover DC to
10MHz. The image frequency appears at 481MHz to
491MHz. This very large frequency spread allows the
use of very low-complexity lowpass filters, with excellent in-band gain and phase performance. The low
DAC noise floor allows for the use of a very wideband
filter, since the filter is not necessary to meet the 3GPP
noise floor specification.
The MAX2022 quadrature modulator then upconverts the
baseband signals to the RF output frequency. The output
power of the MAX2022 will be approximately
-28dBm per carrier. The noise floor will be less than
-169dBm/Hz, with an ACLR typically greater than 65dBc.
This performance meets the 3GPP specification requirements with substantial margins. The noise floor performance will be maintained for large offset frequencies,
eliminating the need for subsequent RF filtering in the
transmitter lineup.
The RF output from the MAX2022 is then amplified by a
combination of a low-noise amplifier followed by a
MAX2057 RF-VGA. This VGA can be used for lineup
compensation for gain variance of transmitter and
power amplifier elements. No significant degradation of
the signal or noise levels will be incurred by this additional amplification. The MAX2057 will deliver an output
12
power of -6dBm per carrier, 0dBm total at an ACLR of
65dB and noise floor of -142dBc/Hz.
Layout Considerations
A properly designed PC board is an essential part of
any RF/microwave circuit. Keep RF signal lines as short
as possible to reduce losses, radiation, and inductance. For the best performance, route the ground pin
traces directly to the exposed pad under the package.
The PC board exposed paddle MUST be connected to
the ground plane of the PC board. It is suggested that
multiple vias be used to connect this pad to the lowerlevel ground planes. This method provides a good
RF/thermal conduction path for the device. Solder the
exposed pad on the bottom of the device package to
the PC board. The MAX2022 evaluation kit can be used
as a reference for board layout. Gerber files are available upon request at www.maxim-ic.com.
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass all V CC pins with
22pF and 0.1µF capacitors placed as close to the pins
as possible. The smallest capacitor should be placed
closest to the device.
To achieve optimum performance, use good voltagesupply layout techniques. The MAX2022 has several RF
processing stages that use the various VCC pins, and
while they have on-chip decoupling, off-chip interaction
between them may degrade gain, linearity, carrier suppression, and output power-control range. Excessive
coupling between stages may degrade stability.
Exposed Pad RF/Thermal Considerations
The EP of the MAX2022’s 36-pin thin QFN-EP package
provides a low thermal-resistance path to the die. It is
important that the PC board on which the IC is mounted
be designed to conduct heat from this contact. In addition, the EP provides a low-inductance RF ground path
for the device.
The exposed paddle (EP) MUST be soldered to a
ground plane on the PC board either directly or through
an array of plated via holes. An array of 9 vias, in a 3 x
3 array, is suggested. Soldering the pad to ground is
critical for efficient heat transfer. Use a solid ground
plane wherever possible.
______________________________________________________________________________________
High-Dynamic-Range, Direct Upconversion
1500MHz to 2500MHz Quadrature Modulator
GND
GND
GND
VCCLOQ1
GND
VCCLOQ2
GND
GND
GND
35
34
33
32
31
30
29
28
1
RBIASLO1
6
COMP
7
RBIASLO2
8
GND
9
Σ
BIAS
LO1
BIAS
LO2
10
11
12
13
14
15
16
17
18
GND
5
0°
GND
GND
90°
GND
4
VCCLOI1
LO
GND
3
VCCLOI1
VCCLOA
GND
2
GND
RBIASLO3
MAX2022
BIAS
LO3
GND
GND
36
27
GND
26
BBQP
25
BBQN
24
GND
23
RFOUT
22
GND
21
BBIN
20
BBIP
19
GND
THIN QFN
Chip Information
TRANSISTOR COUNT: 1414
PROCESS: SiGe BiCMOS
Package Information
For the latest package outline information, go to
www.maxim-ic.com/packages.
______________________________________________________________________________________
13
MAX2022
Pin Configuration/Functional Diagram
High-Dynamic-Range, Direct Upconversion
1500MHz to 2500MHz Quadrature Modulator
MAX2022
Table 1. Component List Referring to the Typical Application Circuit
COMPONENT
VALUE
DESCRIPTION
C1, C3, C4, C6, C7, C10, C13
22pF
22pF ±5%, 50V C0G ceramic capacitors (0402)
C2, C5, C8, C11, C12
0.1µF
0.1µF ±10%, 16V X7R ceramic capacitors (0603)
C9
1.2pF
1.2pF ±0.1pF, 50V C0G ceramic capacitor (0402)
R1
432Ω
432Ω ±1% resistor (0402)
R2
562Ω
562Ω ±1% resistor (0402)
R3
301Ω
301Ω ±1% resistor (0402)
Typical Application Circuit
C12
0.1µF
36
VCC
C1
22pF
VCCLOA
C3
22pF
LO
GND
RBIASLO1
R1
432Ω
COMP
C4
22pF RBIASLO2
R2
562Ω
GND
33
VCCLOQ2
GND
34
GND
32
1
GND
28
29
27
MAX2022
BIAS
LO3
2
GND
GND
30
31
26
3
25
90°
4
24
0°
5
6
Σ
22
7
21
BIAS
LO2
8
20
9
19
10
GND
VCC
GND
BBQP
BBQN
GND
Q+
QC9
1.2pF
23 RFOUT
BIAS
LO1
11
GND
C5
0.1µF
12
GND
C6
22pF
13
14
GND
15
VCCLOI2
RBIASLO3
35
VCCLOI1
GND
C2
0.1µF
GND
GND
R3
301Ω
C11
0.1µF
VCC
C10
22pF
C13
22pF
VCCLOQ1
VCC
16
GND
17
GND
C7
22pF
GND
BBIN
BBIP
II+
GND
18
GND
C8
0.1µF
VCC
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
14 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2005 Maxim Integrated Products
Printed USA
is a registered trademark of Maxim Integrated Products, Inc.