TS750-TS758 6A Silicon Rectifiers Voltage range 50-800 Volts P600 FEATURES Plastic material used carries Underwriters Laboratory Classification 94V-0 High forward current capability Diffused junction High surge current capability High temperature soldering guaranteed: 260°C/10 seconds, 0.375”(9.5mm) lead length, 5lbs.(2.3kg) tension MECHANICAL DATA Cases: Molded plastic body Lead: Plated axial leads, matte-tin plating Polarity: Color band denotes cathode end Mounting position: Any Weight: 0.07 ounce, 2.1 grams Dimensions in inches and (millimeters) Pb-free lead finish (second-level interconnect). MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave,60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol TS750 TS751 TS752 TS754 TS756 TS758 Parameter Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Non-repetitive Peak Reverse Voltage Maximum Average Forward Rectified Current at TA = 60°C, P.C.B. Mounting (Fig. 1) TL= 60°C, 0.125”(3.18mm) Lead Length (Fig. 2) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 6.0A @ 100A Maximum DC Reverse Current @ TA=25°C at Rated DC Blocking Voltage @ TA=100°C Typical Junction Capacitance ( Note 1 ) Typical Thermal Resistance (Note 2) VRRM VRMS VDC VBR 100 200 400 600 800 V 35 70 140 280 420 560 V 50 100 200 400 600 800 V 60 120 240 480 720 1200 V I(AV) 6.0 22.0 A IFSM 400 A VF 0.95 IR Cj RθJA RθJL Operating Junction Temperature Range TJ Storage Temperature Range TSTG Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts 2. Mount on copper pad, size 16mm x 16mm on P.C.B. 8/26/2004 Rev.1.01 Units 50 1.25 5.0 1000 150 20.0 4.0 -50 to +150 -50 to +150 www.SiliconStandard.com V 1.30 uA uA pF °C/W °C °C 1 of 2 TS750-TS758 RATINGS AND CHARACTERISTIC CURVES FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 60 Hz RESISTIVE OR INDUCTIVE LOAD 7.0 28 GROUND PLANE 1.0 X 1.0" (25.4 X 25.4mm) COPPER SURFACE AREA 6.0 AVERAGE FORWARD CURRENT. (A) AVERAGE FORWARD RECTIFIED CURRENT. (A) 8.0 5.0 4.0 0.050"(1.27mm) min. 3.0 ALTERNATE P.C.B. 2.0 1.1 x 1.0" (30 x 30Mmm) COPPER PADS 1.0 0 0 20 40 60 80 100 120 140 160 L=0.25" (6.35mm) 24 L=0.375" (9.5mm) 16 12 8.0 L=0.625" (15.8mm) 0 20 40 100 120 140 160 180 200 FIG.4- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 100 10 INSTANTANEOUS FORDWARD CURRENT AMPERES INSTANTANEOUS REVERSE CURRENT MICROAMPERES 80 o FIG.3- TYPICAL REVERSE CHARACTERISTICS Tj=125 0C Tj=100 0C 1 Tj=25 0C 0.1 0 20 40 60 80 100 120 10 1 0.1 0 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 0.01 0.6 140 TRANSIENT THERMAL IMPEDANCE, OC/W VRRM may be APPLIED BETWEEN EACH CYCLE of SURGE, the Tj NOTED is Tj PRIOR to SURGE NON -RE PET ITIV E Tj=25 0C Tj=1 50 0C 100 0.1 1.0 1.0 1.2 1.4 1.8 1.6 FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE FIG.5- MAXIMUM PEAK FORWARD SURGE CURRENT 600 0.8 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) PEAK FORWARD SURGE CURRENT AMPERES 60 LEAD TEMPERATURE. ( C) AMBIENT TEMPERATURE. ( C) 0 BOTH LEADS ATTACHED as HEAT SINKS WITH LENGTH as SHOWN, L 4.0 o 0.01 60 Hz RESISTIVE OR INDUCTIVE LOAD L=0.125" (3.18mm) 20 0 180 200 FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE 10 100 10 1 0.1 0.01 NUMBER OF CYCLES AT 60Hz 0.1 1 10 100 T, PULSE DURATION, sec. Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 8/26/2004 Rev.1.01 www.SiliconStandard.com 2 of 2