TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/290 DEVICES LEVELS 2N2904 2N2904A 2N2904AL JAN JANTX JANTXV JANS 2N2905 2N2905A 2N2905AL ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Symbol 2N2904 2N2905 2N2904A, L 2N2905A, L Unit Collector-Emitter Voltage VCEO 40 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC mAdc TJ, Tstg 600 0.8 3.0 -65 to +200 RθJC 50 °C/W Parameters / Test Conditions Collector Current Total Power Dissipation (1) @ TA = +25°C @ TC = +25°C (2) Operating & Storage Junction Temperature Range PT Thermal Resistance, Junction-to-Ambient W/°C °C NOTES: 1/ Derate linearly 3.43W/°C for TA > +25°C 2/ Derate linearly 17.2W/°C for TC > +25°C TO-39 (TO-205AD) 2N2904, 2N2904A 2N2905, 2N2905A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Current IC = 10mAdc 2N2904, 2N2905 2N2904A, 2N2905A / AL Collector-Emitter Cutoff Voltage 2N2904, 2N2905 VCE = 40Vdc 2N2904A, 2N2905A / AL VCE = 60Vdc Collector-Base Cutoff Current 2N2904, 2N2905 VCB = 50Vdc 2N2904A, 2N2905A / AL VCB = 60Vdc All Types Emitter-Base Cutoff Current VEB = 3.5Vdc VEB = 5.0Vdc T4-LDS-0186 Rev. 1 (101764) Symbol Min. V(BR)CEO 40 60 ICES ICBO IEBO Max. Unit Vdc 1.0 µAdc 20 10 10 ηAdc ηAdc µAdc 50 10 ηAdc µAdc TO-5 2N2904AL, 2N2905AL Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERTICS (3) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 20 35 40 75 IC = 1.0mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 25 50 40 100 IC = 10mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL IC = 150mAdc, VCE = 10Vdc 2N2904, 2N2904A / AL 2N2905, 2N2905A / AL 40 100 IC = 500mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 20 30 40 50 Collector-Emitter Saturation Voltage IC = 150mAdc, IB = 15mAdc IC = 500mAdc, IB = 50mAdc Base-Emitter Saturation Voltage IC = 150mA, IB = 15mAdc IC = 500mA, IB = 50mAdc T4-LDS-0186 Rev. 1 (101764) hFE 175 450 175 450 35 75 40 100 120 300 VCE(sat) 0.4 1.6 Vdc VBE(sat) 1.3 2.6 Vdc Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N2904 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Symbol Min. Max. hfe 25 50 40 100 Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 50mAdc, VCE = 20Vdc, f = 100MHz |hfe| 2.0 Output Capacitance VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz Cobo 8.0 Iutput Capacitance VEB = 2.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz Cibo 30 Unit pF pF SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time VCC = 30Vdc, IC = 150mAdc, IB1 = 15mAdc Turn-Off Time VCC = 30Vdc, IC = 150Adc, IB1 = IB2 = 15mA Symbol Min. Max. Unit t on 45 ηs t off 300 ηs (3) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0% T4-LDS-0186 Rev. 1 (101764) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .050 1.27 .029 .045 0.74 1.14 .028 .034 0.71 0.86 .010 0.25 45° TP 45° TP Note 6 7, 8 7, 8, 12 7, 8 7, 8 7, 8 5 4 3 10 6 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 12. For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (44.45 mm) maximum. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions (similar to TO-39) T4-LDS-0186 Rev. 1 (101764) Page 4 of 4