TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543 DEVICES LEVELS 2N6768 2N6768T1 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS 400 Vdc Gate – Source Voltage Continuous Drain Current VGS ± 20 Vdc ID1 14 Adc ID2 9.0 Adc Ptl 150 (1) W Rds(on) 0.3 (2) Ω Top, Tstg -55 to +150 °C TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation TC = +25°C Drain to Source On State Resistance Operating & Storage Temperature 2N6768 TO-204AA (TO-3) Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 9.0A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = 320V VGS = 0V, VDS = 400V, Tj = +125°C VGS = 0V, VDS = 320V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 10V, ID2 = 9A pulsed VGS = 10V, ID1 = 4A pulsed Tj = +125°C VGS = 10V, ID2 = 9A pulsed Diode Forward Voltage VGS = 0V, ID1 = 14A pulsed T4-LDS-0043 Rev. 2 (101484) Symbol Min. V(BR)DSS 400 VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 Max. Unit Vdc 4.0 Vdc 2N6768T1 (TO-254AA) 5.0 IGSS1 IGSS2 ±100 ±200 nAdc IDSS1 IDSS2 IDSS3 25 1.0 0.25 µAdc mAdc mAdc rDS(on)1 rDS(on)2 0.3 0.4 Ω Ω rDS(on)3 0.66 Ω VSD 1.7 Vdc Page 1 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol VGS = 10V, ID = 14A VDS = 50V Min. Qg(on) Qgs Qgd Max. Unit 110 18 65 nC Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = 14A, VGS = 10Vdc, Gate drive impedance = 2.35Ω, VDD = 200Vdc Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 30V, IF = 14A T4-LDS-0043 Rev. 2 (101484) Min. td(on) tr td(off) tf 35 190 170 130 trr 1200 ns ns Page 2 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS T4-LDS-0043 Rev. 2 (101484) Page 3 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Ltr CD CH HR HR1 HT LD LL L1 MHD MHS PS PS1 S Dimensions Inches Millimeters Min Max Min Max .875 22.23 .250 .360 6.35 9.15 .495 .525 12.57 13.3 .131 .188 3.33 4.78 .060 .135 1.52 3.43 .057 .063 1.45 1.60 .038 .043 0.97 1.10 .312 .500 7.92 12.70 .050 1.27 .151 .161 3.84 4.09 1.177 1.197 29.90 30.40 .420 .440 10.67 11.18 .205 .225 5.21 5.72 .655 .675 16.64 17.15 Notes 5 6 3 7 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions shall be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below the seating plane. When gauge is not used, measurement will be made at the seating plane. 4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 5. These dimensions pertain to the 2N6764 and 2N6766 types. 6. These dimensions pertain to the 2N6768 and 2N6770 types. 7. Mounting holes shall be deburred on the seating plane side. 8. Drain is electrically connected to the case. 9. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions of transistor types 2N6764 and 2N6766 TO-204AE; for types 2N6768 and 2N6770, TO-204AA T4-LDS-0043 Rev. 2 (101484) Page 4 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Ltr BL CH LD LL LO LS MHD MHO TL TT TW Term 1 Term 2 Term 3 Dimensions Inches Millimeters Min Max Min Max .535 .545 13.59 13.84 .249 .260 6.32 6.60 .035 .045 0.89 1.14 .510 .570 12.95 14.48 .150 BSC 3.81 BSC .150 BSC 3.81 BSC .139 .149 3.53 3.78 .665 .685 16.89 17.40 .790 .800 20.07 20.32 .040 .050 1.02 1.27 .535 .545 13.59 13.84 Drain Source Gate Notes 3, 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Protrusion thickness of ceramic eyelets included in dimension LL. 4. All terminals are isolated from case. 5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions for 2N6764T1, 2N6766T1, 2N6768T1, and 2N6770T1 (TO-254AA). T4-LDS-0043 Rev. 2 (101484) Page 5 of 5