ETC 2N4401

2N4401 & 2N4403
General Purpose Switching Transistors
Features:
• NPN/PNP Silicon Planar Epitaxial Transistors.
• General purpose Switching Applications.
• 2N 4401 Type NPN.
• 2N 4403 Type PNP.
2N4401 NPN
TO-92
2N4403 PNP
Dimensions
Minimum
Maximum
A
4.32
5.33
B
4.45
5.20
C
3.18
4.19
D
0.41
0.55
E
0.35
0.50
F
G
H
5°
1.14
1.40
1.53
K
12.70
-
L
1.982
2.082
Dimensions : Millimetres
Pin Configuration
1 = Emitter
2 = Base
3 = Collector
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31/05/05 V1.0
2N4401 & 2N4403
General Purpose Switching Transistors
Absolute Maximum Ratings
Parameters
Symbol
2N4401
Collector Emitter Voltage
VCEO
40
Collector Base Voltage
VCBO
60
Emitter Base Voltage
VEBO
6
2N4403
Unit
40
IC
Collector Current Continuous
V
5
600
mA
625
5.0
mW
mW/°C
1.5
12
W
W/°C
Tj, Tstg
-55 to +150
°C
Junction to Case
Rth(j-c)
83.3
Junction to Ambient
Rth(j-a)
200
Power Dissipation at Ta = 25°C
Derate above 25°C
PD
Power Dissipation at TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance
°C/W
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameters
Symbol
Test Condition
2N4401
Collector Emitter Voltage
BVCEO*
IC = 1mA, IB = 0
>40
Collector Base Voltage
BVCBO
IC = 100µA, IE = 0
>60
Emitter Base Voltage
BVEBO
IE = 100µA, IC = 0
>6
>5
Base Cut off Current
IBEV
VCE = 35V, VEB = 0.4V
Collector Cut off Current
ICEX
VCE = 35V, VEB = 0.4V
<0.1
<0.1
µA
VCE(Sat)*
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
<0.4
<0.75
<0.4
<0.75
V
VBE(Sat) *
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
0.75 - 0.95
<1.2
0.75 - 0.95
<1.3
hFE
IC = 0.1mA, VCE = 1V
IC = 1mA, VCE = 1V
IC = 10mA, VCE = 1V
IC = 150mA, VCE = 1V*
IC = 150mA, VCE = 2V*
IC = 500mA, VCE = 2V*
>20
>40
>80
100 - 300
>40
>30
>60
>100
100 - 300
>20
-
Small Signal Current Gain
hfe
IC = 1mA, VCE = 10V, f = 1kHz
40 - 500
60 - 500
-
Input Impedance
hie
IC = 1mA, VCE = 10V, f = 1kHz
1.0 - 15
1.5 - 15
kΩ
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
2N4403
Unit
>40
V
Dynamic Characteristics
*Pulse Test : Pulse Width: ≤300µs, Duty ≤2.0%
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31/05/05 V1.0
2N4401 & 2N4403
General Purpose Switching Transistors
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameters
Symbol
Test Condition
Voltage Feedback Ratio
hre
IC = 1mA, VCE = 10V, f = 1kHz
Output Impedance
hoe
IC = 1mA, VCE = 10V, f = 1kHz
1.0 - 30
1.0 - 100
Collector-Base Capacitance
Ccb
VCB = 5V, IE = 0, f = 100kHz
VCB = 10V, IE = 0, f = 140kHz
<6.5
-
<8.5
Emitter-Base Capacitance
Ceb
VEB = 0.5V, IC = 0, f = 100kHz
VEB = 0.5V, IC = 0, f = 140kHz
<30
-
<30
fT
IC = 20mA, VCE = 10V, f = 100MHz
>250
>200
Transition Frequency
2N4401
2N4403
Unit
x10-4
0.1 - 8.0
µΩ
pF
MHz
Switching Characteristics
Delay Time
td
Rise Time
tr
Storage time
ts
Fall Time
tf
VCC = 30V, VEB = 2V
IC = 150mA, IB1 = 15mA
VCC = 30V, IC = 150mA
IB1 = IB2 = 15mA
<15
<20
<225
ns
<30
hFE DC Current Gain (Normalized)
DC Current Gain
IC Collector Current (mA)
VCE, Collector-Emitter Voltage (V)
DC Current Gain
IB Base Current (mA)
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31/05/05 V1.0
2N4401 & 2N4403
General Purpose Switching Transistors
Voltage (V)
On Voltages
IC Collector Current (mA)
hFE DC Current Gain (Normalized)
DC Current Gain
IC Collector Current (mA)
VCE, Collector-Emitter Voltage (V)
Collector Saturation Region
IB Base Current (mA)
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31/05/05 V1.0
2N4401 & 2N4403
General Purpose Switching Transistors
Voltage (V)
On Voltages
IC Collector Current (mA)
Specifications
VCEO
maximum
(V)
VCBO
maximum
(V)
IC
(A)
hFE
minimum
at IC = 1mA
0.6
100
40
40
60
fT
minimum
(MHz)
Ptot
(mW)
Package
and
Pin Out
625
TO-92
250
200
Page 5
Type
Part Number
NPN
2N4401
PNP
2N4403
31/05/05 V1.0
2N4401 & 2N4403
General Purpose Switching Transistors
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31/05/05 V1.0