2N6388 Darlington Power Transistor Darlington silicon power transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO(sus) = 80V (Minimum). • Collector-Emitter Saturation Voltage VCE(sat) = 2.0V (Maximum) at IC = 5.0A. • DC Current Gain hFE = 2500 (Typical) at IC = 4.0A. NPN 2N6388 10 Ampere Darlington Power Transistors NPN Silicon 80 Volts 65 Watts TO-220 Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 3. Emitter L 0.33 0.55 4. Collector(Case) M 2.48 2.98 O 3.70 3.90 Pin 1. Base 2. Collector Dimensions : Millimetres Page 1 05/10/05 V1.1 2N6388 Darlington Power Transistor Maximum Ratings Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO 5.0 IC ICM 10 15 Base Current IB 0.25 Total Power Dissipation at TC = 25°C Derate above 25°C PD 65 0.52 W W/°C TJ, TSTG -65 to +150 °C Symbol Maximum Unit Rθjc 1.92 °C/W Collector Current-Continuous -Peak Operating and Storage Junction Temperature Range 80 V A Thermal Characteristics Characteristic Thermal Resistance Junction to Case PD, Power Dissipation (Watts) Figure - 1 Power Derating TC, Temperature (°C) Page 2 05/10/05 V1.1 2N6388 Darlington Power Transistor Electrical Characteristics (TC = 25°C Unless Otherwise Noted) Characteristic Symbol Minimum Maximum Unit VCEO(sus) 80 - V Collector Cut off Current (VCE = 80V, IB = 0) ICEO - 1.0 Collector Cut off Current (VCE = 80V, VBE(off) = 1.5V) (VCE = 80V, VBE(off) = 1.5V, TC = 125°C) ICEX - 0.3 3.0 Emitter Cut off Current (VEB = 5.0V, IC = 0) IEBO 5.0 - hFE 1000 100 20,000 VCE(sat) - 2.0 3.0 OFF Characteristics Collector-Emitter Sustaining Voltage (1) (IC = 200mA, IB = 0) mA ON Characteristics (1) DC Current Gain (IC = 5.0A, VCE = 3.0V) (IC = 10A, VCE = 3.0V) Collector-Emitter Saturation Voltage (IC = 5.0A, IB = 10mA) (IC = 10A, IB = 100mA) - V Base-Emitter On Voltage (IC = 5.0A, VCE = 3.0V) (IC = 10A, VCE = 3.0V) VBE(on) - 2.8 4.5 Small-Signal Current Gain (IC = 1.0A, VCE = 5.0V, f = 1.0KHz) hfe 1000 - - Output Capacitance (VCB = 10V, IE = 0, f = 1.0MHz) Cob - 200 pF Dynamic Characteristics (1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%. Page 3 05/10/05 V1.1 2N6388 Darlington Power Transistor DC Current Gain hFE, DC Current Gain VCE, Collector Emitter Voltage (Volts) Collector Saturation Region IB, Base Current (mA) “ON” Voltages Switching Time t, Time (µs) V, Voltage (Volts) IC, Collector Current (AMP) IC, Collector Current (AMP) IC, Collector Current (AMP) Page 4 05/10/05 V1.1 2N6388 Darlington Power Transistor Active-Region Safe Operating Area (SOA) There are two limitations on the power handling ability of a IC, Collector Current (AMP) transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor that must not be subjected to greater dissipation than the curves indicate. The data of SOA curve is based on TJ(PK) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(PK)≤150°C, At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. VCE, Collector Emitter Voltage (Volts) Specifications IC(av) maximum (A) VCEO maximum (V) hFE minimum at IC = 5A Ptot at 25°C (W) Package Type Part Number 10 80 1000 65 TO-220 NPN 2N6388 Page 5 05/10/05 V1.1 2N6388 Darlington Power Transistor Notes: International Sales Offices: AUSTRALIA – Farnell InOne FINLAND – Farnell InOne NETHERLANDS – Farnell InOne SWITZERLAND – Farnell InOne Tel No: Tel No: Tel No: ++ 61 2 9645 8888 Fax No: ++ 61 2 9644 7898 Fax No: ++ 358 9 345 5411 Fax No: ++ 31 30 241 7333 Tel No: ++ 41 1 204 64 64 Fax No: ++ 41 1 204 64 54 AUSTRIA – Farnell InOne FRANCE – Farnell InOne NEW ZEALAND – Farnell InOne UK – Farnell InOne Tel No: Tel No: Tel No: Tel No: ++ 43 662 2180 680 ++ 358 9 560 7780 ++ 33 474 68 99 99 ++ 31 30 241 7373 ++ 64 9 357 0646 ++ 44 8701 200 200 Fax No: ++ 43 662 2180 670 Fax No: ++ 33 474 68 99 90 Fax No: ++ 64 9 357 0656 Fax No: ++ 44 8701 200 201 BELGIUM – Farnell InOne GERMANY – Farnell InOne NORWAY – Farnell InOne UK – BuckHickman InOne Tel No: Tel No: Tel No: ++ 45 44 53 66 66 ++ 44 8450 510 150 ++ 32 3 475 2810 ++ 49 89 61 39 39 39 Fax No: ++ 32 3 227 3648 Fax No: ++ 49 89 613 59 01 Fax No: ++ 45 44 53 66 02 ++ 44 8450 510 130 BRAZIL – Farnell-Newark InOne HONG KONG – Farnell-Newark InOne Tel No: ++ 852 2268 9888 PORTUGAL – Farnell InOne UK – CPC ++ 55 11 4066 9400 Tel No: ++ 34 93 475 8804 ++ 44 8701 202 530 Fax No: ++ 55 11 4066 9410 Fax No: ++ 852 2268 9899 Fax No: ++ 34 93 474 5288 ++ 44 8701 202 531 CHINA – Farnell-Newark InOne IRELAND – Farnell InOne SINGAPORE – Tel No: Tel No: Tel No: ++86 10 6238 5152 Fax No: ++86 10 6238 5022 Farnell-Newark InOne Tel No: ++ 65 6788 0200 ++ 353 1 830 9277 Fax No: ++ 353 1 830 9016 Fax No: ++ 65 6788 0300 export EXPORT – Farnell InOne Tel No: ++ 44 8701 200 208 Fax No: ++ 44 8701 200 209 For enquiries from all other markets DENMARK – Farnell InOne ITALY – Farnell InOne SPAIN – Farnell InOne Tel No: Tel No: Tel No: ++ 45 44 53 66 44 ++ 39 02 93 995 200 ++ 34 93 475 8805 Fax No: ++ 45 44 53 66 06 Fax No: ++ 39 02 93 995 300 Fax No: ++ 34 93 474 5107 ESTONIA – Farnell InOne MALAYSIA – SWEDEN – Farnell InOne http://www.farnellinone.com Tel No: ++ 358 9 560 7780 Fax No: ++ 358 9 345 5411 Farnell-Newark InOne Tel No: ++ 60 3 7873 8000 Fax No: ++ 60 3 7873 7000 Tel No: ++ 46 8 730 50 00 Fax No: ++ 46 8 83 52 62 http://www.buckhickmaninone.com http://www.cpc.co.uk Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. 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