STMICROELECTRONICS 2N6388_00

2N6388
Darlington Power Transistor
Darlington silicon power transistors are designed for general-purpose amplifier
and low speed switching applications.
Features:
• Collector-Emitter Sustaining Voltage
VCEO(sus) = 80V (Minimum).
• Collector-Emitter Saturation Voltage
VCE(sat) = 2.0V (Maximum) at IC = 5.0A.
• DC Current Gain hFE = 2500 (Typical) at IC = 4.0A.
NPN
2N6388
10 Ampere
Darlington
Power Transistors
NPN Silicon
80 Volts
65 Watts
TO-220
Dimensions Minimum
Maximum
A
14.68
15.31
B
9.78
10.42
C
5.01
6.52
D
13.06
14.62
E
3.57
4.07
F
2.42
3.66
G
1.12
1.36
H
0.72
0.96
I
4.22
4.98
J
1.14
1.38
K
2.20
2.97
3. Emitter
L
0.33
0.55
4. Collector(Case)
M
2.48
2.98
O
3.70
3.90
Pin 1. Base
2. Collector
Dimensions : Millimetres
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2N6388
Darlington Power Transistor
Maximum Ratings
Characteristic
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
5.0
IC
ICM
10
15
Base Current
IB
0.25
Total Power Dissipation at TC = 25°C
Derate above 25°C
PD
65
0.52
W
W/°C
TJ, TSTG
-65 to +150
°C
Symbol
Maximum
Unit
Rθjc
1.92
°C/W
Collector Current-Continuous
-Peak
Operating and Storage Junction Temperature Range
80
V
A
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Case
PD, Power Dissipation (Watts)
Figure - 1 Power Derating
TC, Temperature (°C)
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2N6388
Darlington Power Transistor
Electrical Characteristics (TC = 25°C Unless Otherwise Noted)
Characteristic
Symbol
Minimum
Maximum
Unit
VCEO(sus)
80
-
V
Collector Cut off Current
(VCE = 80V, IB = 0)
ICEO
-
1.0
Collector Cut off Current
(VCE = 80V, VBE(off) = 1.5V)
(VCE = 80V, VBE(off) = 1.5V, TC = 125°C)
ICEX
-
0.3
3.0
Emitter Cut off Current
(VEB = 5.0V, IC = 0)
IEBO
5.0
-
hFE
1000
100
20,000
VCE(sat)
-
2.0
3.0
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC = 200mA, IB = 0)
mA
ON Characteristics (1)
DC Current Gain
(IC = 5.0A, VCE = 3.0V)
(IC = 10A, VCE = 3.0V)
Collector-Emitter Saturation Voltage
(IC = 5.0A, IB = 10mA)
(IC = 10A, IB = 100mA)
-
V
Base-Emitter On Voltage
(IC = 5.0A, VCE = 3.0V)
(IC = 10A, VCE = 3.0V)
VBE(on)
-
2.8
4.5
Small-Signal Current Gain
(IC = 1.0A, VCE = 5.0V, f = 1.0KHz)
hfe
1000
-
-
Output Capacitance
(VCB = 10V, IE = 0, f = 1.0MHz)
Cob
-
200
pF
Dynamic Characteristics
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.
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2N6388
Darlington Power Transistor
DC Current Gain
hFE, DC Current Gain
VCE, Collector Emitter Voltage (Volts)
Collector Saturation Region
IB, Base Current (mA)
“ON” Voltages
Switching Time
t, Time (µs)
V, Voltage (Volts)
IC, Collector Current (AMP)
IC, Collector Current (AMP)
IC, Collector Current (AMP)
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2N6388
Darlington Power Transistor
Active-Region Safe Operating Area (SOA)
There are two limitations on the power handling ability of a
IC, Collector Current (AMP)
transistor: average junction temperature and second breakdown
safe operating area curves indicate IC-VCE limits of the transistor
that must be observed for reliable operation i.e., the transistor that
must not be subjected to greater dissipation than the curves
indicate.
The data of SOA curve is based on TJ(PK) = 150°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided TJ(PK)≤150°C, At high case
temperatures, thermal limitation will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown.
VCE, Collector Emitter Voltage (Volts)
Specifications
IC(av)
maximum
(A)
VCEO
maximum
(V)
hFE
minimum
at IC = 5A
Ptot
at 25°C
(W)
Package
Type
Part Number
10
80
1000
65
TO-220
NPN
2N6388
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2N6388
Darlington Power Transistor
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