FAIRCHILD 2N4401_01

T2N4401
Low Power Bipolar Transistors
Features:
• NPN Silicon Planar Epitaxial Transistors.
• General purpose Switching Applications.
TO-92 Plastic Package
Dimensions
Minimum
Maximum
A
4.32
5.33
B
4.45
5.20
C
3.18
4.19
D
0.41
0.55
E
0.35
0.50
F
G
H
5°
1.14
1.40
1.53
K
12.70
-
L
1.982
2.082
Dimensions : Millimetres
Pin Configuration
1 = Emitter
2 = Base
3 = Collector
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T2N4401
Low Power Bipolar Transistors
Absolute Maximum Ratings
Rating
Symbol
T2N4401
Collector-Emitter Voltage
VCEO
40
Collector-Base Voltage
VCBO
60
Emitter-Base Voltage
VEBO
6
IC
600
mA
625
5.0
mW
mW/°C
1.5
12
W
W/°C
-55 to +150
°C
Collector Current Continuous
Power Dissipation at Ta = 25°C
Derate above 25°C
Power Dissipation at TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
PD
Tj, Tstg
Unit
V
Thermal Resistance
Junction to Case
Rth
(j-c)
83.3
Junction to Ambient
Rth
(j-a)
200
°C/W
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Characteristic
Symbol
T2N4401
Collector Emitter Voltage
IC = 1mA, IB = 0
BVCEO*
>40
Collector Base Voltage
IC = 100µA, IE = 0
BVCBO
>60
Emitter Base Voltage
IE = 100µA, IC = 0
BVEBO
>6
Base Cut off Current
VCE = 35V, VEB = 0.4V
IBEV
Collector Cut off Current
VCE = 35V, VEB = 0.4V
ICEX
<0.1
Collector Emitter Saturation Voltage
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
VCE (Sat)*
Base Emitter Saturation Voltage
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
VBE (Sat)*
Unit
V
µA
<0.4
<0.75
V
0.75 - 0.95
<1.2
*Pulse Test : Pulse Width: ≤300µs, Duty ≤2.0%
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T2N4401
Low Power Bipolar Transistors
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Characteristic
Symbol
T2N4401
Unit
hFE
>20
>40
>80
100 - 300
>40
-
Small Signal Current Gain
IC = 1mA, VCE = 10V, f = 1KHz
hfe
40 - 500
-
Input Impedance
IC = 1mA, VCE = 10V, f = 1KHz
hie
1.0 - 15
kΩ
Symbol
2N4401
Unit
Voltage Feedback Ratio
IC = 1mA, VCE = 10V, f = 1KHz
hre
0.1 - 8.0
x10-4
Output Impedance
IC = 1mA, VCE = 10V, f = 1KHz
hoe
1.0 - 30
µΩ
Collector-Base Capacitance
VCB = 5V, IE = 0, f = 100KHz
VCB = 10V, IE = 0, f = 140KHz
Ccb
<6.5
-
Emitter-Base Capacitance
VEB = 0.5V, IC = 0, f = 100kHz
Ceb
<30
fT
>250
Delay Time
td
<15
Rise Time
tr
<20
Storage time
ts
<225
Fall Time
tf
<30
DC Current Gain
IC = 0.1mA, VCE = 1V
IC = 1mA, VCE = 1V
IC = 10mA, VCE = 1V
IC = 150mA, VCE = 1V*
IC = 500mA, VCE = 2V*
Dynamic Characteristics
Characteristic
Transition Frequency
IC = 20mA, VCE = 10V, f = 100MHz
pF
MHz
Switching Characteristics
VCC = 30V, VEB = 2V
IC = 150mA, IB1 = 15mA
ns
VCC = 30V, IC = 150mA
IB1 = IB2 = 15mA
ns
*Pulse Test : Pulse Width: ≤300µs, Duty ≤2.0%
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T2N4401
Low Power Bipolar Transistors
hFE, DC Current Gain (Normalized)
DC Current Gain
IC Collector Current (mA)
VCE, Collector-Emitter Voltage (V)
DC Current Gain
IB Base Current (mA)
Voltage (V)
On Voltages
IC Collector Current (mA)
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T2N4401
Low Power Bipolar Transistors
hFE, DC Current Gain (Normalized)
DC Current Gain
IC Collector Current (mA)
VCE, Collector-Emitter Voltage (V)
Collector Saturation Region
IB Base Current (mA)
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T2N4401
Low Power Bipolar Transistors
Voltage (V)
On Voltages
IC Collector Current (mA)
Part Number Table
Package
Part Number
TO-92
2N4401
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10/04/06 V1.0
T2N4401
Low Power Bipolar Transistors
Notes:
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