580 Pleasant St. Watertown, MA 02172 PH: (617) 926-0404 FAX: (617) 924-1235 2N2222A Features • • • • SWITCHING TRANSISTOR JAN, JANTX, JANTXV Meets MIL 19500 /255 Collector - Base Voltage 75 V Collector - Current 800 mA High Speed, Medium Current Bipolar Transistor SMALL SIGNAL BIPOLAR NPN SILICON TO-18 COLLECTOR BASE EMITTER Maximum Ratings RATING Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25 °C Derate above 25 °C Total Device Dissipation @ TC = 25 °C Derate above 25 °C Operating Junction&Storage Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD TJ, Tstg VALUE 50 75 6 800 500 2.85 1.8 10.3 - 65 to + 200 UNIT Vdc Vdc Vdc mAdc mW mW/°C WATTS mW/°C °C Thermal Characteristics CHARACTERISTIC Thermal Resistance, Junction to Ambient MSCO275A 01-29-98 SYMBOL Rθ JA MAX 350 UNIT °C/W DSW2N2222A < - > ( 33807) 2N2222A Electrical Characteristics (TA = 25°C unless otherwise noted) OFF CHARACTERISTIC Collector - Emitter Breakdown Voltage (1) ( IC = 10 mA dc, IB = 0 ) Collector - Base Breakdown Voltage (1) ( IC = 10 µAdc, IE = 0 ) Emitter - Base Breakdown Voltage (1) ( IE = 10 µAdc, IC = 0 ) Collector - Emitter Cutoff Current ( VCE = 50 Vdc, VBE(off) = 0 V ) Collector - Base Cutoff Current ( VCB = 60 Vdc, IE = 0 ) ( VCB = 60 Vdc, IE = 0, TA = 150 °C ) Emitter - Base Cutoff Current ( VEB = 4 Vdc ) SYMBOL V(BR)CEO ON CHARACTERISTIC DC Current Gain ( IC = 100 µA dc, VCE = 10 Vdc ) ( IC = 1 mA dc, VCE = 10 Vdc ) ( IC = 10 mA dc, VCE = 10 Vdc ) ( IC = 150 mA dc, VCE = 10 Vdc ) (1) ( IC = 500 mA dc, VCE = 10 Vdc ) (1) ( IC = 10 mA dc, VCE = 10 Vdc, TJ = -55°C ) Collector - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) Base - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) SYMBOL hFE MIN MAX UNIT 50 Vdc 75 Vdc 6 Vdc V(BR)CBO V(BR)EBO ICES 50 nAdc 10 10 nAdc µAdc 10 nAdc MAX UNIT ICBO IEBO MIN 50 75 100 100 30 35 325 300 VCE(sat) 0.3 1.0 Vdc Vdc 1.2 2.0 Vdc Vdc VBE(sat) 0.6 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% MSCO275A 01-29-98 DSW2N2222A < - > ( 33807) 2N2222A Electrical Characteristics (TA = 25°C unless otherwise noted) SMALL - SIGNAL CHARACTERISTICS Output Capacitance ( VCB = 10 Vdc, IE = 0, 100kHz ≤ f ≤ 1 MHz ) Input Capacitance ( VEB = 0.5 Vdc, IC = 0, 100kHz ≤ f ≤ 1 MHz ) SYMBOL Cobo SWITCHING CHARACTERISTICS Turn - On Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 =15 mAdc) ( See FIGURE 1 ) Turn - Off Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 = - IB2 = 15 mAdc) ( See FIGURE 2 ) SYMBOL ton MIN MAX UNIT 8 pF 25 pF MAX UNIT 35 ns 300 ns MAX UNIT Cibo MIN toff Small - Signal AC Characteristics (TA = 25°C) LOW FREQUENCY Common - Emitter Forward Current Transfer Ratio (IC = 1 mA, VCE = 10 V, f = 1kHz) HIGH FREQUENCY Common - Emitter Forward Current Transfer Ratio (IC = 20 mA, VCE = 20 V, f = 100 MHz) Spice Model SYMBOL hfe 50 |hfe| 2.5 (based upon typical device characteristics) Q2N2222A NPN ( IS = 19.34n XT = 3.0 + NE = 1.647 IKF = 3.0 + NC = 1.88 IKR = 10.75 + FC = 0.5 CJE = 29.31p + ITF = 5.282 XTF = 249.9 EG = 1.11 NK = 0.3052 RC = 0.3567 VJE = 0.9036 VTF=10 ) MIN *1 VAF=250.3 XTB = 1.5 CJC = 11.02p MJE = 0.4101 BF = 163.8 BR = 11.49 VJC = 0.3869 TR = 38.32n ISE =174.3f ISC = 19.9f MJC = 0.3292 TF =361.8p *1. Microsemi Corp. claims no responsibility for misapplication of Spice Model information. Spice modeling should be used as a precursor guide to in-circuit performance. Actual performance is the responsibility of the user/designer. MSCO275A 01-29-98 DSW2N2222A < - > ( 33807) 2N2222A L TO 18 CASE OUTLINE 19.8 MIL TYP SQUARE DIE CHARACTERISTICS Back is Collector (B) Chip Thickness is: 10 MILS TYP (E) Metalization is: Top = Al, Back = Au DIE OUTLINE MSC0275A 11-10-97 DSW2N2222A < - > ( 33807) 2N2222A MSC0275A 11-10-97 FIGURE 1 Saturated Turn-on Time Test Circuit FIGURE 2 Saturated Turn-off Time Test Circuit DSW2N2222A < - > ( 33807) 2N2222A DC CURRENT GAIN TJ = 25 C VCE = 10 V hFE CURRENT GAIN 250 250 200 200 typ 150 150 100 100 50 50 0 -4 10 0 -3 10 -2 10 -1 10 0 10 IC COLLECTOR CURRENT (A) FIGURE 3 VCE, COLLECTOR-EMITTER (V) COLLECTOR SATURATION vs BASE CURRENT TJ = 25 C 1.0 1.0 0.8 0.8 IC = 10 mA 0.6 0.6 IC = 150 mA 0.4 0.4 IC = 500 mA 0.2 0.2 0.0 -5 10 0.0 -4 10 -3 10 -2 10 IB, BASE CURRENT -1 10 0 10 (A) FIGURE 4 MSC0275A 11-10-97 DSW2N2222A < - > ( 33807) 2N2222A VBE, BASE-EMITTER (V) BASE SATURATION vs BASE CURRENT TJ = 25 C 1.2 1.2 1.1 1.1 IC = 500 mA 1.0 0.9 1.0 0.9 IC = 150 mA 0.8 0.8 IC = 10 mA 0.7 0.7 0.6 0.6 0.5 0.5 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 IB, BASE CURRENT (A) FIGURE 5 JUNCTION CAPACITANCE (pF) JUNCTION CAPACITANCE TJ = 25 C 100 kHz < f < 1 MHz 30 25 CIBO 20 15 10 COBO 5 0 .1 1 10 100 REVERSE JUNCTION VOLTAGE (V) FIGURE 6 MSC0275A 11-10-97 DSW2N2222A < - > ( 33807) 2N2222A SMALL SIGNAL CURRENT GAIN, hfe SMALL SIGNAL CURENT GAIN vs COLLECTOR CURRENT TJ = 25 C VCE = 10 V f = 1kHz 250 250 200 200 typ. 150 100 150 .1 1 10 100 100 COLLECTOR CURRENT (mA) FIGURE 7 HIGH FREQUENCY GAIN | hfe | HIGH FREQUENCY GAIN TJ = 25 C VCE = 20 V f = 100 MHz 5 5 4 4 3 3 typ. 2 2 1 1 0 1 10 0 100 COLLECTOR CURRENT (mA) FIGURE 8 MSC0275A 11-10-97 DSW2N2222A < - > ( 33807) 2N2222A HIGH FREQUENCY GAIN | hfe | GAIN vs FREQUENCY TJ = 25 C IC = 20 mA VCE = 20 V 40 40 30 30 20 20 10 10 typ. 0 10 100 0 1000 FREQUENCY (MHz) FIGURE 9 MSC0275A 11-10-97 DSW2N2222A < - > ( 33807)