TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/350 Devices Qualified Level 2N3867 2N3867S JAN JANTX JANTXV 2N3868 2N3868S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Power Dissipation @ TA = 250C(1) @ TC = 250C(2) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IC PT TOP, TSTG 2N3867 2N3867S 2N3868 2N3868S 40 40 60 60 4.0 3.0 1.0 10 -55 to +200 Unit Vdc Vdc Vdc Adc W W 0 C TO-5* 2N3867, 2N3868 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 57.1 mW/0C for TC > +250C Symbol RθJC Max. 17.5 Unit C/W TO-39* (TO-205AD) 2N3867S, 2N3868S 0 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N3867, S 2N3868, S V(BR)CBO 40 60 Vdc 2N3867, S 2N3868, S V(BR)CEO 40 60 Vdc V(BR)EBO 4.0 OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 µAdc Collector-Emitter Breakdown Voltage IC = 20 mAdc Emitter-Base Breakdown Voltage IE = 100 µAdc Collector-Emitter Cutoff Current VEB = 2.0 Vdc, VCE = 40 Vdc VEB = 2.0 Vdc, VCE = 60 Vdc Collector-Base Cutoff Current VCB = 40 Vdc VCB = 60 Vdc Emitter-Base Cutoff Current VEB = 4 Vdc Vdc µAdc 2N3867, S 2N3868, S ICEX 1.0 1.0 2N3867, S 2N3868, S ICBO 100 µAdc IEBO 100 µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3867, S; 2N3868, S JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. hFE 50 35 40 30 25 20 20 Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 500 mAdc, VCE = 1.0 Vdc IC = 1.5 Adc, VCE = 2.0 Vdc IC = 2.5 Adc, VCE = 3.0 Vdc IC = 3.0 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 500 mAdc, IB = 50 mAdc IC = 1.5 Adc, IB = 150 mAdc IC = 2.5 Adc, IB = 250 mAdc Base-Emitter Saturation Voltage IC = 500 mAdc, IB = 50 mAdc IC = 1.5 Adc, IB = 150 mAdc IC = 2.5 Adc, IB = 250 mAdc 2N3867, S 2N3868, S 2N3867, S 2N3868, S 2N3867, S 2N3868, S All Types VCE(sat) 200 150 0.5 0.75 1.5 Vdc Vdc VBE(sat) 0.9 1.0 1.4 2.0 hfe 3.0 12 DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short Circuit Forward Current Transfer Ratio IC = 100 mAdc, VCE = 5.0 Vdc, f = 20 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 3.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 120 Cibo 800 pF pF SWITCHING CHARACTERISTICS Delay Time VCC = -30 Vdc, VEB = 0, Rise Time IC = 1.5 Adc, IB1 = 150 mAdc Storage Time VCC = -30 Vdc, VEB = 0, Fall Time IC = 1.5Adc, IB1 = IB2 = 150 mAdc Turn-On Time VCC = 30, IC = 1.5 Adc, IB = 150 mAdc Turn-Off Time VCC = 30, IC = 1.5 Adc, IB = 150 mAdc d r t s t f 35 65 500 100 ηs ηs ηs ηs on 100 ηs t 600 ηs t t t off SAFE OPERATING AREA DC Tests TC = 250C, 1 Cycle, t = 1.0 s Test 1 VCE = 3.33 Vdc, IC = 3.0 Adc Test 2 VCE = 40 Vdc, IC = 160 mAdc 2N3867, S VCE = 60 Vdc, IC = 80 mAdc 2N3868, S (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2