LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT4403LT1 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device Package LMBT4403LT1 Shipping 1 SOT–23 3000/Tape & Reel LMBT4403LT1G SOT–23 3000/Tape & Reel 2 SOT– 23 (TO–236AB) MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Collector–Base Voltage Rating V CEO V CBO – 40 Vdc Emitter–Base Voltage V EBO – 40 – 5.0 Vdc Vdc IC – 600 mAdc Collector Current — Continuous 3 COLLECTOR 1 BASE THERMAL CHARACTERISTICS Symbol Max Unit Total Device Dissipation FR –5 Board (1) T A =25 °C Derate above 25°C Characteristic PD 225 mW 1.8 mW/°C Thermal Resistance Junction to Ambient R θJA 556 °C/W Total Device Dissipation PD 300 mW R θJA T J , T stg 2.4 417 –55 to +150 mW/°C °C/W °C Alumina Substrate (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 2 EMITTER DEVICE MARKING LMBT4403LT1 = 2T ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max – 40 — – 40 — – 5.0 — — – 0.1 — – 0.1 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –0.1mAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –0.1mAdc, I C = 0) Base Cutoff Current (V CE = –35 Vdc, V EB = –0.4 Vdc) Collector Cutoff Current (V CE = –35 Vdc, V EB = –0.4 Vdc) V (BR)CEO Vdc V (BR)CBO Vdc V (BR)EBO Vdc µAdc I BEV µAdc I CEX 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. O15–1/5 LESHAN RADIO COMPANY, LTD. LMBT4403LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 30 60 100 100 20 –– –– –– 300 –– –– –– – 0.4 – 0.75 – 0.75 –– – 0.95 – 1.3 200 –– –– 8.5 –– 30 1.5 15 Unit ON CHARACTERISTICS DC Current Gain (I C = –0.1 mAdc, V CE = –1.0 Vdc) (I C = –1.0 mAdc, V CE = –1.0 Vdc) (I C = –10 mAdc, V CE = –1.0 Vdc) (I C = –150 mAdc, V CE = –2.0 Vdc)(3) (I C = –500 mAdc, V CE = –2.0 Vdc)(3) Collector–Emitter Saturation Voltage(3) (I C = –150mAdc, I B = –15 mAdc) (I C = –500 mAdc, I B = –50 mAdc) Base–Emitter Saturation Voltage (3) (I C = –150 mAdc, I B = –15 mAdc) (I C = –500 mAdc, I B = –50 mAdc) hFE –– VCE(sat) V Vdc Vdc BE(sat) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = –20mAdc, V CE= –10 Vdc, f = 100 MHz) Collector–Base Capacitance (V CB= –10 Vdc, I E = 0, f = 1.0 MHz) Emitter–Base Capacitance (V BE = –0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) fT C MHz pF cb C eb pF h ie kΩ h re X 10 0.1 8.0 60 500 1.0 100 15 h fe –4 — µmhos h oe SWITCHING CHARACTERISTICS Delay Time (V CC = – 30 Vdc, V EB = –2.0 Vdc, td — Rise Time I C = –150mAdc, I B1 = –15 mAdc) td — 20 ns Storage Time (V CC = –30 Vdc, I C = –150 mAdc, ts — 225 ns Fall Time I B1 = I B2 = –15 mAdc) tf — 30 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS – 30 V – 30 V 200 +2.0V <2.0 ns 200 < 20 ns + 14V 1.0 k 1.0 k 0 0 C S* < 10 pF –16 V 1.0 to 100µs, DUTY CYCLE = 2% Figure 1. Turn–On Time 1N916 –16 V C S*< 10 pF 1.0 to 100µs, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 2. Turn–Off Time O15–2/5 LESHAN RADIO COMPANY, LTD. LMBT4403LT1 TYPICAL TRANSIENT CHARACTERISTICS T J = 25°C T J = 100°C 30 10 7.0 C eb 10 7.0 C cb 5.0 3.0 2.0 1.0 0.7 0.5 QT 0.3 3.0 2.0 0.1 QA 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 10 20 30 50 70 100 200 300 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 500 100 100 I C /I B = 10 70 t r, RISE TIME (ns) t r @V CC=30V t r @V CC=10V 30 t d@VBE(off) = 2.0V t d@VBE(off) = 0V 20 V CC= 30V I C / I B =10 70 50 50 30 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time 500 200 I C/I B = 20 t s , RISE TIME (ns) t , TIME (ns) V CC = 30 V I C / I B = 10 5.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 100 I C/I B = 10 70 50 t s’ = t s – 1/8 t f I B1 = I B2 30 20 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time O15–3/5 LESHAN RADIO COMPANY, LTD. LMBT4403LT1 SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE V CE = –10 Vdc, T A = 25°C Bandwidth = 1.0 Hz 10 10 f = 1.0 kHz 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8 I C = 1.0 mA, R S = 430Ω I C = 500 µA, R S = 560Ω 6 I C = 50 µA, R S = 2.7kΩ I C = 100 µA, R S = 1.6 kΩ 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 I C = 50 µA 100 µA 500 µA 1.0 mA 6 4 2 0 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10k 20k f , FREQUENCY (kHz) R S, SOURCE RESISTANCE (Ω) Figure 8. Frequency Effects Figure 9. Source Resistance Effects 50k h PARAMETERS (V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C) This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves, a high–gain and a low–gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 100 700 50 h ie, INPUT IMPEDANCE (kΩ) 1000 h fe, CURRENT GAIN 500 300 200 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 100 70 50 MMBT4403LT1 UNIT 2 20 10 5 2 1 0.5 0.2 0.1 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) Figure 10. Current Gain Figure 11. Input Impedance 20 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.1 10 h oe , OUTPUT ADMITTANCE ( µmhos) h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) MMBT4403LT1 UNIT 1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 7.0 5.0 10 500 100 50 20 MMBT4403LT1 UNIT 1 10 MMBT4403LT1 UNIT 2 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance 7.0 5.0 10 O15–4/5 LESHAN RADIO COMPANY, LTD. LMBT4403LT1 STATIC CHARACTERISTICS h FE , NORMALIZED CURRENT GAIN 3.0 V CE= 1.0 V V CE= 10 V 2.0 T J = 125°C 25°C 1.0 –55°C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 I C , COLLECTOR CURRENT (mA) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 I C=1.0 mA 10 mA 100mA 500mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I B , BASE CURRENT (mA) Figure 15. Collector Saturation Region + 0.5 T J = 25°C V, VOLTAGE ( VOLTS ) 0 V BE(sat) @ I C /I B =10 0.8 0.6 COEFFICIENT (mV/ °C) 10 V BE @ V CE =1.0 V 0.4 0.2 V CE(sat) @ I C /I B =10 θ VC for VCE(sat) – 0.5 –1.0 –1.5 θ VS for V BE –2.0 – 2.5 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 16. “On” Voltages Figure 17. Temperature Coefficients 500 O15–5/5