AP1093 2.4~2.5 GHz Power Amplifier 2004.08.30 The AP1093 is a linear, low current power amplifier in ISM band utilizing InGaP /GaAs HBT process. It features a low current of 130mA, high gain of 30 dB, linear power of 19dBm and PAE of 18% for 802.11g under 3.3V. The AP1093 is housed in a 3 x 3 (mm), 16-pin, QFN leadless package. The AP1093 is suitable to be used in 802.11b/g WLAN and other 2.4GHz applications. • Low current : 130mA for 11g linear power(19dBm) at 3.3V 175mA for 11g linear power(22dBm) at 5V • High Efficiency: PAE>35% @802.11b linear power PAE>18% @802.11g linear power • High Gain: 30~31dB Major Applications Pin Details • IEEE 802.11b/g WLAN Clients • IEEE 802.11b/g WLAN Access Points • 2.4 GHz ISM Band Functional Block Diagram 1 GND 2 Vcc_Bias 3 Dect_Out 4 NC Vcc1 Vcc1 16 15 14 13 12 RF OUT Input Match 11 RF OUT 10 RF OUT Bias Detector 9 NC Pin Number Name Description 1 2 RF_IN GND RF input DC and RF ground 3 Vcc_Bias Supply voltage for bias circuit 4 Dect_Out Power detector output 5 6 7 8 9 10 11 12 Vb1 Vb2 GND NC NC RF_OUT RF_OUT RF_OUT 1st-stage control voltage 2nd-stage control voltage DC and RF ground 13 VCC1 14 VCC1 5 6 7 8 15 NC Vb1 Vb2 GND NC 16 NC Package Base No contact (Connect to ground for better thermal dissipation) RF output. Require external matching. The detail configuration can be found in Application Notes Supply voltage for first stage. Some bypass capacitors are needed for system application. The detail configuration can be found in Application Notes. No contact (Connect to ground for better thermal dissipation) The package ground provides circuit Center Metal ground as well as heat dissipation path for the power amplifier. Vb2 can be connected with Vb1 pin into a single Vref through external resistor. (Please refer to the AP1093 Application note) For more information,please contact us at: © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserves the right to make any changes to the specifications without notice. 1 of 7 AP1093 RF IN NC • Detector AP1093 2.4~2.5 GHz Power Amplifier 2004.08.30 Electrical Characteristics • Under Vc=3.3V, Vref=2.85V, Ta=25ºC PARAMETER CONDITION Freq. Total current Pout=19dBm, 64QAM/54Mbps Pout=24dBm, CCK/11Mbps SYMBOL MIN. f 2.4 Icc TYP. MAX. UNIT 2.5 GHz 130 208 mA 19 dBm Linear Output Power EVM<3%, 64QAM/54Mbps Bias control reference current Icq=85mA Iref 0.95 mA Pout=19dBm, 64QAM/54Mbps Gp 30 dB Icq 85 mA EVM 2.5 % Power Gain Quiescent current EVM Pout=19dBm, 64QAM/54Mbps 802.11b ACP-1st Side Lobe Pout=24dBm, CCK/11Mbps -36 dBc 802.11b ACP-2nd Side Lobe Pout=24dBm, CCK/11Mbps -51 dBc Input VSWR 2:1 Output VSWR 2.5:1 PAE @ linear power Pout=16dBm, 64QAM/54Mbps Pout=24dBm, CCK/11Mbps PAE 18 35 % AP1093 For more information,please contact us at: © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserves the right to make any changes to the specifications without notice. 2 of 7 AP1093 2.4~2.5 GHz Power Amplifier 2004.08.30 Electrical Characteristics • Under Vc=5V, Vref=2.95V, Ta=25ºC PARAMETER CONDITION Freq. Total current @ Pout=22dBm, 64QAM/54Mbps @Pout=27dBm, CCK/11Mbps SYMBOL MIN. f 2.4 Icc TYP. MAX. UNIT 2.5 GHz 175 285 mA 22 dBm Linear Output Power EVM<3%, 64QAM/54Mbps Bias control reference current @Icq=105mA Iref 1.1 mA @ Pout=22dBm, 64QAM/54Mbps Gp 29 dB Icq 105 mA EVM 3 % Power Gain Quiescent current EVM @ Pout=22dBm, 64QAM/54Mbps 802.11b ACP-1st Side Lobe @Pout=27dBm, CCK/11Mbps -35 802.11b ACP-2nd Side Lobe @Pout=27dBm, CCK/11Mbps -51 In put VSWR 2 Out put VSWR 2.5 PAE @ linear power @ Pout=22dBm, 64QAM/54Mbps @Pout=27dBm, CCK/11Mbps Absolute Maximum Ratings 18 35 % Important Note: Rating Unit DC Power Supply For Collector +5 V DC Supply Current For Collector 450 mA RF Input Power +5 dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +125 °C The information provided in this datasheet is deemed to be accurate and reliable only at present time. RF Integrated Corp. reserves the right to make any changes to the specifications in this datasheet without prior notice. © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserves the right to make any changes to the specifications without notice. 3 of 7 AP1093 Parameter For more information,please contact us at: PAE AP1093 2.4~2.5 GHz Power Amplifier 2004.08.30 Fig. 1 EVM & Icc vs. Pout (dBm) 8 160 140 120 100 80 60 40 20 0 6 4 EVM(%) Icc(mA) (Vc1=Vc2=Vcc_bias=3.3V, Vref=2.85V, f=2.412GHz, 54Mbps OFDM Signal) 2 0 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Pout (dBm) Icc(mA)@Vc=3.3V EVM(%)@Vc=3.3V, Included Signal Source (Source EVM ~0.8%) Fig. 3 EVM ( %) 2.5 2 1.5 1 0 2.4 2.41 2.42 2.43 2.44 2.45 2.46 2.47 2.48 2.49 2.5 Frequency (GHz) 50 40 30 20 10 0 Input Power (dBm) EVM(%)@3.3V Gain(dB)@3.3V PAE(%)@3.3V Pout(dBm)@3.3V For more information,please contact us at: © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserves the right to make any changes to the specifications without notice. 4 of 7 AP1093 0.5 60 PAE (%) 3 Gain, POUT, PAE vs. PIN - 1 5 .7 - 1 4 .7 - 1 3 .8 - 1 2 .9 - 1 2 .0 - 1 1 .0 - 1 0 .0 - 9 .2 - 8 .2 - 7 .1 - 5 .8 - 4 .2 - 2 .1 2 .9 EVM vs. Frequency (Pout=19dBm, With 54 Mb/s, OFDM Modulation) PAE(%), Gain (dB), Output Power (dBm) Fig. 2 AP1093 2.4~2.5 GHz Power Amplifier 2004.08.30 Fig. 5 Fig. 4 Power Gain vs. Frequency Detector Output vs. Output Power 1.1 33 1.0 31 Power Gain (dB) Detector Output (V) 35 0.9 0.8 0.7 0.6 29 27 25 23 21 19 0.5 17 0.4 15 14 15 16 17 18 19 20 21 22 23 24 25 26 27 2 2.12 2.24 Output Power (dBm) Vdec(V)@3.3V 2.36 2.48 2.6 Frequency (MHz) 2.72 2.84 2.96 Gain(dB)@Pout~17dBm, Vc=3.3V Fig. 6 Fig. 7 Input Return Loss vs. Frequency Output Return Loss vs. Frequency 0 0 -2 -5 -6 dB (S22) dB (S11) -4 -8 -10 -12 -10 -15 -25 -16 2.00 2.13 2.26 2.39 2.52 Frequency (GHz) For more information,please contact us at: 2.65 2.78 2.91 2 2.12 2.24 2.36 2.48 2.6 2.72 2.84 2.96 Frequency (GHz) © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserves the right to make any changes to the specifications without notice. 5 of 7 AP1093 -20 -14 AP1093 2.4~2.5 GHz Power Amplifier 2004.08.30 Fig. 8 Gain, ACPR, PAE vs Pout_3.3V (With 11b CCK Modulation) ACP1 ACP2 PAE Gain Icc 50 250 200 40 150 30 100 20 10 50 0 0 Icc (mA) PAE(%) ,ACPR(dBc) & Gain (dB) 60 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Pout (dBm) Fig. 9 350 60 300 50 250 40 200 30 150 20 100 10 50 0 0 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Pout (dBm) For more information,please contact us at: © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserves the right to make any changes to the specifications without notice. 6 of 7 AP1093 PAE(%), ACPR(dBc) & Gain (dB) Icc Icc(mA) ACP1 70 Gain, ACPR, PAE vs Pout_5V (With 11b CCK Modulation) ACP2 PAE Gain AP1093 2.4~2.5 GHz Power Amplifier 2004.08.30 Package Outline Top View Bottom View 3.00 + 0.1 1.50 0.40 MARKING 1.50 0.23 TYP. 0.23 TYP. 0.5 TYP. 3.00 + 0.1 0.40 0.5 TYP. Unit: mm 0.75 MAX. C SEATING PLANE 0.25 0.50 0.0 ~ 0.05 Side View AP1093 Note： 1. Dimension and tolerance conform to ASME Y14.5M1994. 2. Refer to JEDEC STD. MO-220 WEED-2 ISSUE B For more detailed information, please refer to AP1093 Application Note. For more information,please contact us at: © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserves the right to make any changes to the specifications without notice. 7 of 7