AP1045A 2.4~2.5 GHz High Power Amplifier 2004.12.20 AP1045A is a linear, two-stages power amplifier MMIC with high output power in 2.4GHz band utilizing InGaP/GaAs HBT process. With the excellent linearity performance, the device delivers 20dBm output power under 54Mbps OFDM (IEEE802.11g) modulation, with 3% EVM at 3.3V. It can also deliver 22.5dBm 11g linear power at 5V. The PA also includes on-chip power detector, providing a DC voltage proportional to the output power of device. The AP1045A is housed in a 3 x 3(mm), 16 pin, QFN leadless package. • High Power: 20dBm 11g linear power at 3.3V 22.5dBm 11g linear power at 5V • High Gain: 30.5dB Gain at 3.3V, Pout=20dBm • Detector Pin Details Major Applications • IEEE 802.11b/g • Wireless LAN Systems • 2.4 GHz ISM Band Application • Suitable for high power WLAN applications Functional Block Diagram NC NC Vcc Vcc 16 15 14 13 1 12 RF_OUT GND 2 11 RF_OUT Bias_Vcc 3 10 RF_OUT Dect_Out 4 Bias 9 NC Name Description 1 RF_IN RF input 2 GND Ground 3 Bias_Vcc Bias Ckt Voltage 4 Dect_Out Detector Output 5 Vb1 First stage Bias 6 Vb2 Second stage Bias 7 GND Ground 8 NC No contact 9 NC No contact 10 RF_OUT RF output 11 RF_OUT RF output 12 RF_OUT RF output 13 Vcc Power supply input 14 Vcc Power supply input 5 6 7 8 15 NC No contact Vb1 Vb2 GND NC 16 NC No contact Pkg Base GND Ground QFN-16pin, 3x3 (mm) For more information,please contact us at: © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserved the right to make any changes to the specifications without notice. 1 of 6 AP1045A RF_IN Pin Number AP1045A 2.4~2.5 GHz High Power Amplifier 2004.12.20 Items Freq. Symbol Test Conditions f Max. 2.5 Power Gain @3.3V, Pout=20dBm with 64QAM Modulation Signal P1dB Idle current Typ. Icq @3.3V Min. Unit 2.4 GHz 30.5 dB 26.5 dBm 130 mA In put return loss -10 dB Out put return loss -9 dB Linear power Current consumption @3.3V, 64QAM modulation type @5V, 64QAM modulation type 20 22.5 dBm @3.3V, Pout=20dBm @5V, Pout=22.5dBm 190 280 mA Icc Gain flatness +/-0.5 Harmonics 2f 3f PAE @ linear power 2f 3f PAE Max. Input power No damage On chip detector @3.3V, 20dBm Absolute Maximum Ratings -35 -35 dBc 15% % 10 dBm 1.00 V Caution Rating Unit DC Power Supply 5.5 V DC Supply Current 550 mA RF Input Power 10 dBm Operating Ambient Temperature -40 to +85 ℃ Storage Temperature -40 to +125 ℃ RF Integrated Corp. believes the information provided is reliable at present time. However, we assumes no responsibility for inaccuracies and omissions and use of the information shall be entirely at the user’s own risk. RF Integrated Corp. reserves the right to make change to the specifications without notice. Notes:1.Exceeding Maximum ratings could cause damage to the device. 2.This device operation condition is biasing at 5V, please refer to the application note. For more information,please contact us at: © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserved the right to make any changes to the specifications without notice. 2 of 6 AP1045A Parameter AP1045A 2.4~2.5 GHz High Power Amplifier 2004.12.20 Data Charts (AP1045A Evaluation Kit, RF Signal = With IEEE 802.11g Modulation (54Mbps), Vcc=3.3V, Vref=2.8V, TA = 25℃, unless otherwise noted.) 8 240 7 210 6 180 5 150 4 120 3 90 2 60 1 30 0 0 Icc (mA) EVM ( %) Fig.1 EVM, Icc vs. Output Power 10 11 12 13 14 15 16 17 18 19 20 21 22 Pout (dBm) Icc(mA)@Vc=3.3V EVM(%)@Vc=3.3V Fig.3 Fig.2 Detector Output vs. Output Power 34 Gain (dB) 32 30 28 26 24 22 1.4 1.2 1 0.8 0.6 0.4 0.2 0 20 10 11 12 13 14 15 16 Pout (dBm) 17 18 19 20 21 22 10 11 12 13 14 15 16 17 18 19 20 21 22 Pout (dBm) Fig. 3 For more information,please contact us at: © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserved the right to make any changes to the specifications without notice. 3 of 6 AP1045A Detector Output ( V) Gain vs. Output Power AP1045A 2.4~2.5 GHz High Power Amplifier 2004.12.20 Data Charts Small Signal S-Parameter Data Fig.4 S21 DB(|S(2,1)|) 76_07_3 DB(|S(2,1)|) 76_07_12 DB(|S(2,1)|) 76_07_14 35DB(|S(2,1)|) 76_07_11 DB(|S(2,1)|) 76_07_13 DB(|S(2,1)|) 76_07_15 DB(|S(2,1)|) 76_07_16 DB(|S(2,1)|) 76_07_2 DB(|S(2,1)|) 76_07_4 DB(|S(2,1)|) 76_07_17 DB(|S(2,1)|) 76_07_1 DB(|S(2,1)|) 76_07_8 Graph 2 DB(|S(2,1)|) 76_07_9 30 25 2.4 GHz 28.38 dB 20 2.499 GHz 28.47 dB 15 10 5 0 2.2 DB(|S(1,1)|) 76_07_3 DB(|S(1,1)|) 76_07_12 DB(|S(1,1)|) 76_07_14 0 DB(|S(1,1)|) 76_07_13 DB(|S(1,1)|) 76_07_15 DB(|S(1,1)|) 76_07_11 -10 2.25 2.3 2.35 2.4 2.6 2.65 2.7 2.75 2.8 Fig.5 Fig.6 S11 S22 DB(|S(1,1)|) DB(|S(1,1)|) 76_07_2 DB(|S(1,1)|) 76_07_4 DB(|S(1,1)|) 76_07_17 DB(|S(1,1)|) 76_07_1 DB(|S(1,1)|) 76_07_8 76_07_16 Graph 3 DB(|S(1,1)|) 76_07_9 2.4994 GHz -15.14 dB 2.3993 GHz -17.11 dB 2.45 2.5 2.55 Frequency (GHz) DB(|S(2,2)|) 76_07_3 DB(|S(2,2)|) 76_07_12 DB(|S(2,2)|) 76_07_14 DB(|S(2,2)|) 76_07_16 1 Graph DB(|S(2,2)|) 76_07_2 DB(|S(2,2)|) 76_07_4 0 DB(|S(2,2)|) 76_07_11 DB(|S(2,2)|) 76_07_13 DB(|S(2,2)|) 76_07_15 DB(|S(2,2)|) 76_07_17 DB(|S(2,2)|) 76_07_1 DB(|S(2,2)|) 76_07_8 DB(|S(2,2)|) 76_07_9 -5 -20 -10 -30 -15 -40 -20 2.4982 GHz -11.3 dB 2.3998 GHz -12.37 dB 2.2 2.25 2.3 2.35 2.4 2.45 2.5 2.55 Frequency (GHz) For more information,please contact us at: 2.6 2.65 2.7 2.75 2.8 2.2 2.25 2.3 2.35 2.4 2.45 2.5 2.55 Frequency (GHz) 2.6 2.65 2.7 2.75 2.8 © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserved the right to make any changes to the specifications without notice. 4 of 6 AP1045A -25 -50 AP1045A 2.4~2.5 GHz High Power Amplifier 2004.12.20 Package Outline Top View Bottom View 3.00 + 0.1 1.50 0.40 MARKING 1.50 0.23 TYP. 0.23 TYP. 0.5 TYP. 3.00 + 0.1 0.40 0.5 TYP. Unit: mm 0.75 MAX. C SEATING PLANE 0.25 0.50 0.0 ~ 0.05 Side View AP1045A Note： 1. Dimension and tolerance conform to ASME Y14.5M1994. 2. Refer to JEDEC STD. MO-220 WEED-2 ISSUE B For more detailed information, please refer to AP1098 Application Note. For more information,please contact us at: © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserved the right to make any changes to the specifications without notice. 5 of 6 AP1045A 2.4~2.5 GHz High Power Amplifier 2004.12.20 EVB Circuit Diagram C8 Vcc(3.3V) 1uF C7 1uF C6 100nF 16 RF_IN R1 Vcc_bias 3.3V 120ohm 15 L2 2.7nH 14 13 1 12 2 11 3 10 C5 10pF 50ohm MTL 0.5mm 50ohm MTL 2.0mm C3 0.5pF RF_OUT C4 1.8pF Bias Ckt. 9 4 C1 5 47pF 7 6 8 R2 27kohm Detector_Out R3 330ohm R4 560ohm C2 10nF AP1045A Vref2,3 (2.8V) For more information,please contact us at: © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserved the right to make any changes to the specifications without notice. 6 of 6