AP1098 2.4~2.5 GHz Power Amplifier 2004.07.19 Preliminary • Ultra LOW Current (see below specs) The AP1098 is a linear, low current power amplifier in ISM band utilizing InGaP /GaAs HBT process. It features a LOW current of 85mA, small signal gain of 25 dB, linear power of 19dBm and PAE of 28% for 802.11g under 3.3V. It can also be adjusted to smaller current(~60mA) with lower linear power (~16dBm). The AP1098 is housed in a 3 x 3 (mm), 16-pin, and QFN leadless package. The AP1098 is suitable to be used in portable, low current 802.11b and 802.11g WLAN applications. • IEEE 802.11b/g WLAN system • WLAN Portable Devices • WLAN USB Devices • Bluetooth and other 2.4 GHz ISM Band Application I F R NC NC Vcc1 16 15 14 Vcc1 13 12 RF OUT 1 2 3 Dect_Out 4 • Gain: 25 dB Under Vc=3.3V, Vref=3V * 11g linear power: 19dBm current: 85mA * 11b linear power: 23dBm current: 165mA y r a n i il m • Low Idle Current: 25mA Name Description RF_IN GND RF input. DC and RF ground. Vcc_Bias Supply voltage for bias circuit. 4 Dect_Out Power detector output. 5 Vb1 1st-stage control voltage 6 Vb2 2nd-stage control voltage 7 GND DC and RF ground. 8 9 10 11 12 NC NC RF_OUT RF_OUT RF_OUT 13 VCC1 14 VCC1 No contact (Connect to ground for better thermal dissipation.) RF output. Require external matching. The detail configuration can be found in Application Notes Supply voltage for first stage. Some bypass capacitors are needed for system application. The detail configuration can be found in Application Notes. 15 NC 16 NC 1 2 Input Match 11 RF OUT 10 RF OUT Bias Detector 5 6 7 8 Vb1 Vb2 GND NC 9 QFN- 16 pin, 3 x 3 (mm) NC 3 Package Base No contact (Connect to ground for better thermal dissipation.) The package ground provides circuit Center Metal ground as well as heat dissipation path for the power amplifier. Vb2 can be connected with Vb1 pin into a single Vref through external resistor. (Please refer to the AP1098 Application note) For more information,please contact us at: © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserves the right to make any changes to the specifications without notice. 1 of 5 AP1098 Vcc_Bias Pin Number e r P C Functional Block Diagram GND PAE>28% @802.11g linear power Pin Details Major Applications RF IN • Ultra High Efficiency: AP1098 2.4~2.5 GHz Power Amplifier 2004.07.19 Preliminary Electrical Characteristics Under Vc=3.3V, Vref=3V, Ta=25ºC Parameter Symbol Test conditions Freq. f Total current Icc @ Pout=19dBm, 64QAM/54Mbps @ Pout=23dBm, CCK/11Mbps 85 165 mA Bias control reference current Iref @Icq=25mA 0.7 mA Power Gain Gp @ Pout=19dBm, 64QAM/54Mbps 25 dB Quiescent current Icq 25 mA EVM at Output power 19dBm EVM Output VSWR I F R PAE @ linear power n i il m 2.5 GHz y r a @Pout=23dBm, CCK/11Mbps -36 dBc -56 dBc @Pout=19dBm, 64QAM/54Mbps @Pout=23dBm, CCK/11Mbps Absolute Maximum Ratings % 2 2.5 28 37 % Important Note: Rating Unit DC Power Supply For Collector +5 V DC Supply Current For Collector 280 mA RF Input Power +5 dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +125 °C The information provided in this datasheet is deemed to be accurate and reliable only at present time. RF Integrated Corp. reserves the right to make any changes to the specifications in this datasheet without prior notice. © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserves the right to make any changes to the specifications without notice. 2 of 5 AP1098 Parameter For more information,please contact us at: Unit 3 e r P C PAE Max. @ Pout=19dBm, 64QAM/54Mbps @Pout=23dBm, CCK/11Mbps Input VSWR Typ. 2.4 802.11b ACP-1st Side Lobe 802.11b ACP-2nd Side Lobe Min. AP1098 2.4~2.5 GHz Power Amplifier 2004.07.19 Preliminary Data Charts Fig. 1 Fig. 2 EVM & Icc vs. Pout (dBm)@3.3V Gain, EVM,PAE vs Pout 54Mbps OFDM Signal) 4 60 3 40 2 20 1 0 0 10 11 12 13 14 15 16 17 18 19 7 30 6 25 5 y r a n i il m 20 4 15 3 10 2 5 1 0 20 10 Pout (dBm) Icc(mA)@Vc=3.3V 35 e r P C EVM(%)@Vc=3.3V, Uncorrected Signal Source (Source EVM ~0.8%) 11 12 13 I F R 0.80 0.60 0.00 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Output Power (dBm) Vdec(V)@3.3V For more information,please contact us at: 17 18 19 0 20 EVM(% ) Gain(dB) Fig. 4 Gain, ACP, PAE, Icc vs Pout_3.3V (With 11b CCK Modulation) 70 65 60 55 50 45 40 35 30 25 20 15 10 280 260 240 220 200 180 160 140 120 100 80 60 40 17 18 19 20 21 22 23 24 25 Pout (dBm) 1st sidelobe PAE 2nd sidelobe Icc © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserves the right to make any changes to the specifications without notice. 3 of 5 AP1098 0.40 0.20 ACP(dBc), Gain (dB) &PAE(%) Detector Output (V) 1.20 1.00 16 PAE(%) Detector Output vs. Output Power 1.40 15 Pout(dB m) Fig. 3 1.60 14 Icc (mA) 80 Gain (dB) & PAE (%) 5 EVM(%) Icc(mA) 100 EVM(%) (Vc1=Vc2=Vcc_bias=3.3V, Vref=3V, f=2.447GHz, AP1098 2.4~2.5 GHz Power Amplifier 2004.07.19 Preliminary Data Charts 25 Fig.5 Fig. 6 Power Gain vs. Frequency Input Return Loss vs. Frequency 0 24 -2 22 -4 21 -6 dB (S11) Power Gain (dB) 23 20 19 y r a n i il m -8 -10 18 17 -12 16 -14 15 2 2.12 2.24 2.36 2.48 2.6 2.72 2.84 2.96 Frequency (MHz) e r P C Gain(dB)@Pout~19dBm, Vc=3.3V 2.00 2.13 2.26 I F R 2.78 2.91 Reverse Isolation vs. Frequency -45 -46 -47 dB (S12) dB (S22) -4 2.65 Fig. 8 Output Return Loss vs. Frequency -2 2.52 Frequency (GHz) Fig. 7 0 2.39 -6 -49 -50 -10 -51 -12 -52 2 2.12 2.24 2.36 2.48 2.6 Frequency (GHz) For more information,please contact us at: 2.72 2.84 2.96 2 2.12 2.24 2.36 2.48 2.6 2.72 2.84 2.96 Frequency (MHz) © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserves the right to make any changes to the specifications without notice. 4 of 5 AP1098 -8 -48 AP1098 2.4~2.5 GHz Power Amplifier 2004.07.19 Preliminary Package Outline Top View Bottom View 3.00 + 0.1 1.50 e r P C 1.50 Unit: mm 0.25 0.50 0.0 ~ 0.05 C 0.5 TYP. 0.75 MAX. Side View SEATING PLANE 0.23 TYP. y r a n i il m 0.5TYP. MARKING I F R 0.23 TYP. 0.40 3.00 + 0.1 0.40 AP1098 Note： 1. Dimension and tolerance conform to ASME Y14.5M1994. 2. Refer to JEDEC STD. MO-220 WEED-2 ISSUE B For more detailed information, please refer to AP1098 Application Note. For more information,please contact us at: © 2003 RF Integrated Corporation. All rights reserved. Sales Dept. Tel: +886-2-2698-1022 e-mail: [email protected] RF integrated Corp. reserves the right to make any changes to the specifications without notice. 5 of 5