TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/439 Devices Qualified Level 2N5038 JAN JANTX JANTXV 2N5039 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol 2N5038 2N5039 Units VCEO VCBO VEBO IB IC PT 90 150 75 125 Vdc Vdc Vdc Adc Adc W Top, Tstg 7.0 5.0 20 140 0 -65 to +200 C TO-3* (TO-204AA) THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 800 mW/0C for TC > +250C Max. 1.25 Unit C/W 0 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit V(BR)CEO 90 75 Vdc V(BR)EBO 7.0 Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Emitter-Base Breakdown Voltage IE = 25 mAdc Collector-Base Cutoff Current VCE = 150 Vdc VCE = 125 Vdc Collector-Base Cutoff Current VCE = 70 Vdc VCE = 55 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VBE = -1.5 Vdc VCE = 100 Vdc VBE = -1.5 Vdc VCE = 85 Vdc 2N5038 2N5039 2N5038 2N5039 ICBO 1.0 1.0 µAdc 2N5038 2N5039 ICEO 1.0 1.0 µAdc IEBO 1.0 µAdc ICEX 5.0 5.0 µAdc 2N5038 2N5039 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5038, 2N5039, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. 50 30 50 30 15 15 200 150 Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 0.5 Adc, VCE = 5.0 Vdc IC = 2.0 Adc, VCE = 5.0 Vdc IC = 12 Adc, VCE = 5.0 Vdc IC = 10 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 12 Adc, IB = 1.2 Adc IC = 10 Adc, IB = 1.0 Adc IC = 20 Adc, IB = 5.0 Adc Base-Emitter Saturation Voltage IC = 20 Adc, IB = 5.0 Adc Base-Emitter Voltage IC = 12 Adc, VCE = 5.0 Vdc IC = 10 Adc, VCE = 5.0 Vdc 2N5038 2N5039 2N5038 2N5039 2N5038 2N5039 2N5038 2N5039 Both 2N5038 2N5039 hFE VCE(sat) 1.0 1.0 2.5 VBE(sat) 3.3 VBE 1.8 1.8 Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz hFE 12 48 500 pF on 0.5 µs off 2.0 µs Cobo SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 ± 2 Vdc; IC = 12 Adc; IB1= 1.2 Adc VCC = 30 ± 2 Vdc; IC = 10 Adc; IB1= 1.0 Adc Turn-Off Time VCC = 30 ± 2 Vdc; IC = 12 Adc; IB1 = -IB2 = 1.2 Adc VCC = 30 ± 2 Vdc; IC = 10 Adc; IB1 = -IB2 = 1.0 Adc 2N5038 2N5039 t 2N5038 2N5039 t SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 28 Vdc, IC = 5.0 Adc Test 2 VCE = 45 Vdc, IC = 0.9 Adc Test 3 VCE = 7.0 Vdc, IC = 20 Adc Test 4 VCE = 90 Vdc, IC = 0.23 Adc 2N5038 Test 4 VCE = 75 Vdc, IC = 0.32 Adc 2N5039 (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2