an AMP ZE comDanv r = Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz 30W PHI 617-30 Features l l l l l Designed for Linear Amplifier Applications -30 dBc Typ 3rd IMD at 30 Watts PEP Common Emitter Class AB Operation Internal Input Impedance Matching Diffused Emitter Ballasting r -I .225?k010 (5.72i.25) ,400 <lO.l6)- Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Collector-Base Voltage V CSC 60 V Collector-EmitterVoltage V CES 60 V Emitter-Base Voltage V EBD 3.0 V Collector Current ‘c 10 A Power Dissipation pcl 109 w Junction Temperature ? 200 “C .225&O (5.72i.25) StorageTemperature T STG -55 to +150 “C Thermal Resistance 8JC 1.6 “CM, UNLESS Electrical Characteristics ~olle%-Emitter NOTED, TOLERANCES Breakdown Voltaae Leakage Current I Symbol Min Max Units BV,,, 60 - V LFP I - ) 4.0 1 mA I,=40 mA 1 V,,=25V I Breakdown Voltage BV,,, 20 - V I,=40 mA Collector-Emitter Breakdown Voltage BV,,, 30 - V I,=40 mA, F&=220 BV,,, 3.0 - V I,=40 mA DC Forward Current Gain 15 120 - V,,=5 Power Gain 10 - dB V,,=25 Collector Efficiencv 40 - % VP,=25 V, I,,=200 - 1 dB Emitter-Base Breakdown Voltaae I Input Return Loss 1 Load Mismatch Tolerance 3rd Order IMD RL 1 10 1 R V, I,=2 A V, I,,=200 mA, P,,,=30 W PEP, F=l.6, 1.65,1.70 GHz mA, P,,,,=30 W PEP, F=l.6, 1.651.70 GHz 1 V-,=25 V, I,,=200 mA. P-,.,=30 W PEP, F=1.6, 1.65, 1.70GHz VSWR-T - 3.0:1 - V,,=25 V, I,,=200 mA, P,,,=30 W PEP, F=l.6, ‘MD, - -28 dBc V,,=25 V, I,,=020 mA, P,,,=30 W PEP, F=l650 FZ- ’ Typical Optimum Device Impedances z,,w 2.1 + j4.9 1.3-j0.7 1.65 3.1 + j3.8 1.2 - j0.8 1.70 2.1 +j3.5 1.2 - j0.9 Subject to Change 1.65, 1.70 GHz MHz, 4F=lOO kHz 04D Without Notice. 9-l 76 North America: M/A-COM, Tel. (800) Fax (800) 1 Z,,m(~) 1.60 Specifications It+CHES tO’J5’ cHILUHETERS tJ3nH, Test Conditions Collector-Emitter F(GHz) ARE at 25°C Parameter Collector-Emitter OTHERWISE 366-2266 618-8883 n Asia/Pacific: Tel. Fax +81 (03) 3226-1671 +81 (03) 3226-1451 m Europe: Tel. +44 (1344) Fax- +44 (1344) Inc. 869 595 300 020 Wireless Bipolar Power Transistor, PH1617-30 30W v2.00 RF Test Fixture Rl I 150 AU INPUT -t,G 50 OHMS cu 159 cl 200 ARTWORK DIMENSIDNS I-IS-l- PARTS Cl c2 c3 c4 c5 C6 CR1 Ql Rl R2 Ll BOARD TYPE: M/A-COM, IN MILS 33 pF ATC SIZE A 6,8 UF 35 VDLTS CHIP 4,7 uF 35 VOLTS CHIP 50 UF 50 VOLTS lN4245 DIODE PH1617-30 5R l/4 WATT 2.2R l/8 WATT CHIP 10 T/NO. 24 AWG ON L/8’ RDGERS 6010.5 25 DIAMETER MILS THICK, ER = 10.5 Specifications Subject to Change Without Notice. g-177 Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Wireless Bipolar Power Transistor, Typical Broadband Performance GAIN-EFFICIENCY P ouT=30 13 - PH1617-30 30W Curves OUTPUT vs FREQUENCY W V,,=25 V I,,=200 mA I,,=200 . 7s 11 40 mA VOLTAGE MHz F=l650 . - ,I Efficiency .z co z - .45- 9 3 . 3.5 8 1.60 25 . T 1.65 FREQUENCY 1.70 0 12 - I,=300 16 18 COLLECTOR 20 22 VOLTAGE C,, vs COLLECTOR MHz V,,=25 V 24 26 (V) VOLTAGE F=l .O MHz mA 38 34 30 14 (GHr) GAIN vs PoUT F=l650 14 POWER vs COLLECTOR 42 45 POUT 24 28 32 P&PEP) 36 40 44 48 24 26 32 in dBm 36 P&PEP) 40 44 48 in dBm Specifications Subject to Change Without Notice. M/A-COM, 9-l 78 North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020