ETC SU200-01A-SM

SU200-01A-TO
SU200-01A-SM
Large Area InGaAs APDs
The largest commercially available InGaAs APD,
the SU200-01A is ideal for 1.25 Gbps free space
optical
communications
laser
range-finding
applications, OTDR and high resolution Optical
Coherence
Tomography.
Standard
packaging
choices are a 5 pin TO-46 header package with
BK7 window or die mounted on a 800 x 850 µm
ceramic submount.
APPLICATIONS
FEATURES

 Free Space Optical Communications

 Large, 200 µm active diameter

 LADAR/LIDAR range finding

 Typical bandwidth over 1 GHz

 Optical Time Domain Reflectometry

 Over 70% QE from 1000 to 1650 nm

 Optical Coherence Tomography

 Available in hermetically sealed 5 pin
TO-46 package or on submount
Vbd, Id over temperature
NEP vs gain & temperature
48
1.E-05
7E-13
1.E-06
45
44
1.E-07
43
42
1.E-08
6E-13
5E-13
NEP (W/Hz)
46
Dark Current at Vbd - 1 (A)
Breakdown Voltage (V)
47
4E-13
3E-13
2E-13
1E-13
41
40
1.E-09
0
20
40
Temperature (C)
Vbd:
60
Id @ Vbd-1
80
0
0
20
M=12.5
M=10
40
Temperature (C)
M=7.5
60
M=5
80
M=2.5
3490 U.S. Route 1 Princeton, New Jersey 08540 Phone: (609) 520-0610 Fax: (609) 520-0638
www.sensorsinc.com [email protected]
Doc. No. 4110-0043 Rev. D
Sensors Unlimited, Inc. reserves the right to make product design or specification changes without notice, ©2004.
Effective Date: 03-Mar-05
SU200-01A-TO
SU200-01A-SM
SPECIFICATIONS
(VSUPPLY = 3.3 V, Tc = 25
C, VAPD= Vbd-1V,λ=1550nm)
Parameter
Active Diameter
APD Breakdown Voltage
APD Capacitance
APD Gain Factor
APD Responsivity
Bandwidth (-3 dB)
Dark Current
Ionization Ratio
Series Resistance
Test Conditions
Id = 10 µA
F = 1 MHz
M=10
dV(i = 7 mA, i = 4 mA)
Symbol
D
Vbd
C
M
R
BW
Id
k=α/
β
Ro
Min
40
10
8
5
-
Typ
200
50
10
8
1
150
0.4
-
Max
60
2500
Unit
m
V
fF
200
60
A/W
GHz
nA
Ώ
ABSOLUTE RATINGS
Parameter
Forward Current
Operating Case Temperature Range
Optical Input Power @ VAPD
Reverse Current
Storage Case Temperature Range
Symbol
If
Top
PIN
Ir
Tstg
Min
0
-40
Typ
-
Max
10
85
-7
1.6
85
Unit
mA

C
dBm
mA

C
DIMENSIONS: mm [inch]
PIN
1
2
3
4
5
TO
PACKAGE
SILICA
SUBMOUNT
FUNCTION
APD Anode
NC
APD Cathode
NC
GND
NOTES:
ALL DIMENSIONS: mm [ INCH ]
SUBMOUNT PADS HAVE 500 nm OVERLAY
OF 99.999% Au
BACK-ILLUMINATED PHOTODIODE BUMP
BONDED TO SUBMOUNT
BACKSIDE COATED WITH 1550 nm AR
COATING
APD DIAMETER: 200 µm
CAUTION:
ELECTROSTATIC DISCHARGE SENSITIVE
SOLDERING TEMPERATURE SHOULD
NOT EXCEED 260°C FOR MORE THAN
10 SECONDS
ORDERING INFORMATION:
SU200-01A-TO
InGaAs APD photodiode with 200 m active diameter. in TO-46 package
SU200-01A-SM
InGaAs APD photodiode with 200 m active diameter. on silica submount
3490 U.S. Route 1 Princeton, New Jersey 08540 Phone: (609) 520-0610 Fax: (609) 520-0638
www.sensorsinc.com [email protected]
Doc. No. 4110-0043 Rev. D
Sensors Unlimited, Inc. reserves the right to make product design or specification changes without notice, ©2004.
Effective Date: 03-Mar-05