SU200-01A-TO SU200-01A-SM Large Area InGaAs APDs The largest commercially available InGaAs APD, the SU200-01A is ideal for 1.25 Gbps free space optical communications laser range-finding applications, OTDR and high resolution Optical Coherence Tomography. Standard packaging choices are a 5 pin TO-46 header package with BK7 window or die mounted on a 800 x 850 µm ceramic submount. APPLICATIONS FEATURES Free Space Optical Communications Large, 200 µm active diameter LADAR/LIDAR range finding Typical bandwidth over 1 GHz Optical Time Domain Reflectometry Over 70% QE from 1000 to 1650 nm Optical Coherence Tomography Available in hermetically sealed 5 pin TO-46 package or on submount Vbd, Id over temperature NEP vs gain & temperature 48 1.E-05 7E-13 1.E-06 45 44 1.E-07 43 42 1.E-08 6E-13 5E-13 NEP (W/Hz) 46 Dark Current at Vbd - 1 (A) Breakdown Voltage (V) 47 4E-13 3E-13 2E-13 1E-13 41 40 1.E-09 0 20 40 Temperature (C) Vbd: 60 Id @ Vbd-1 80 0 0 20 M=12.5 M=10 40 Temperature (C) M=7.5 60 M=5 80 M=2.5 3490 U.S. Route 1 Princeton, New Jersey 08540 Phone: (609) 520-0610 Fax: (609) 520-0638 www.sensorsinc.com [email protected] Doc. No. 4110-0043 Rev. D Sensors Unlimited, Inc. reserves the right to make product design or specification changes without notice, ©2004. Effective Date: 03-Mar-05 SU200-01A-TO SU200-01A-SM SPECIFICATIONS (VSUPPLY = 3.3 V, Tc = 25 C, VAPD= Vbd-1V,λ=1550nm) Parameter Active Diameter APD Breakdown Voltage APD Capacitance APD Gain Factor APD Responsivity Bandwidth (-3 dB) Dark Current Ionization Ratio Series Resistance Test Conditions Id = 10 µA F = 1 MHz M=10 dV(i = 7 mA, i = 4 mA) Symbol D Vbd C M R BW Id k=α/ β Ro Min 40 10 8 5 - Typ 200 50 10 8 1 150 0.4 - Max 60 2500 Unit m V fF 200 60 A/W GHz nA Ώ ABSOLUTE RATINGS Parameter Forward Current Operating Case Temperature Range Optical Input Power @ VAPD Reverse Current Storage Case Temperature Range Symbol If Top PIN Ir Tstg Min 0 -40 Typ - Max 10 85 -7 1.6 85 Unit mA C dBm mA C DIMENSIONS: mm [inch] PIN 1 2 3 4 5 TO PACKAGE SILICA SUBMOUNT FUNCTION APD Anode NC APD Cathode NC GND NOTES: ALL DIMENSIONS: mm [ INCH ] SUBMOUNT PADS HAVE 500 nm OVERLAY OF 99.999% Au BACK-ILLUMINATED PHOTODIODE BUMP BONDED TO SUBMOUNT BACKSIDE COATED WITH 1550 nm AR COATING APD DIAMETER: 200 µm CAUTION: ELECTROSTATIC DISCHARGE SENSITIVE SOLDERING TEMPERATURE SHOULD NOT EXCEED 260°C FOR MORE THAN 10 SECONDS ORDERING INFORMATION: SU200-01A-TO InGaAs APD photodiode with 200 m active diameter. in TO-46 package SU200-01A-SM InGaAs APD photodiode with 200 m active diameter. on silica submount 3490 U.S. Route 1 Princeton, New Jersey 08540 Phone: (609) 520-0610 Fax: (609) 520-0638 www.sensorsinc.com [email protected] Doc. No. 4110-0043 Rev. D Sensors Unlimited, Inc. reserves the right to make product design or specification changes without notice, ©2004. Effective Date: 03-Mar-05