IPS IPT12Q08-CEA

IPT12Q08-xxA
IP Semiconductor Co., Ltd.
High current density due to double mesa technology;
SIPOS and Glass Passivation. IPT12Q08-xx series are
suitable for general purpose AC Switching.
They can be used as an ON/OFF function In application
such as static relays, heating regulation, Induction
motor stating circuits… or for phase Control operation
light dimmers, motor speed Controllers.
The IPT12Q08-xxA(Insulated version) series are isolated
internally, they provided a 2500V RMS isolation voltage
from all three termials to external heatsink.
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
12
A
VDRM / VRRM
800
V
VTM
≤ 1.55
V
TO-220A
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Symbol
Value
Unit
Tstg
Tj
-40 to +150
-40 to +125
℃
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
VDRM
VRRM
800
800
V
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
VDSM
VRSM
900
900
V
RMS on–state current
(Full sine wave)
Tc =95℃
IT(RMS)
12
A
ITSM
126
120
A
I²t
78
A²s
dI / dt
50
A/us
IGM
4
A
PG(AV)
1
W
Non repetitive surge peak on–state Current
(full cycle, Tj = 25℃)
I²t Value for fusing
f = 60Hz t = 16.7ms
f = 50 Hz t = 20ms
tp = 10ms
Critical Rate of rise of on-state current
IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃
Peak gate current
tp = 20us, Tj = 125 ℃
Average gate power dissipation
Tj = 125 ℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
1
IPT12Q08-xxA
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
IPT12Q08-xxA
Symbol
Test Condition
Quadrant
IGT
VD = 12V RL = 30Ω
VGT
VD=VDRM, RL=3.3KΩ,
VGD
Tj = 125 ℃
Unit
CE
BE
25
50
50
100
I – II – III
IV
MAX
ALL
MAX
1.3
V
ALL
MIN
0.2
V
I – III – IV
IL
IG = 1.2 IGT
40
50
80
100
200
400
MAX
mA
II
IH
dV/dt
mA
IT = 100mA
MAX
VD = 67% VDRM gate open Tj = 125 ℃
MIN
mA
V/us
STATIC CHARACTERISTICS
Symbol
Test Conditions
Value (MAX)
Unit
VTM
ITM = 17A, t p = 380uS
Tj = 25 ℃
1.55
V
IDRM
VD = VDRM
Tj = 25 ℃
5
uA
IRRM
VR = VRRM
Tj = 125 ℃
1
mA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j – c)
Junction to case (AC)
2.3
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
2
IPT12Q08-xxA
PACKAGE MECHANICAL DATA
TO-220A
Millimeters
Min
Typ
Max
A
4.4
4.6
B
0.61
0.88
C
0.46
0.70
C2
1.23
1.32
C3
2.4
2.72
D
8.6
9.7
E
9.8
10.4
F
6.2
6.6
G
4.8
5.4
H
28
29.8
L1
3.75
L2
1.14
1.7
L3
2.65
2.95
V
40º
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected]
3
IPT12Q08-xxA
IPT12Q06-xxA
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
4