MICROSEMI 2N3996

TECHNICAL DATA
NPN POWER SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/374
Devices
2N3996
Qualified Level
2N3997
2N3998
MAXIMUM RATINGS
Ratings
Symbol
Value
Unit
VCEO
VCBO
VEBO
IB
80
100
8.0
0.5
5.0
10(1)
2.0
30
-65 to +200
Vdc
Vdc
Vdc
Adc
Max.
3.33
Unit
0
C/W
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
IC
0
Total Power Dissipation
JAN
JANTX
JANTXV
2N3999
(2)
@ TA = +25 C
@ TC = +1000C (3)
Operating & Storage Junction Temperature Range
PT
TJ, Tstg
Adc
W
0
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Symbol
1) This value applies for tp ≤ 1.0 ms, duty cycle ≤ 50%
2) Derate linearly 11.4 mW/0C for TA > +250C
3) Derate linearly 300 mW/0C for TC > +1000C
RθJC
TO-111*
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
V(BR)CEO
80
Vdc
V(BR)CBO
100
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc
Collector-Emitter Breakdown Voltage
IC = 10 µAdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc, VBE = 0
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
VEB = 8.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
ICEO
10
µAdc
ICES
200
ηAdc
IEBO
200
10
ηAdc
µAdc
120101
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2N3996, 2N3997, 2N3998, 2N3999 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
30
40
15
120
60
80
20
240
Unit
ON CHARACTERISTICS (4)
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 2.0 Vdc
IC = 1.0 Adc, VCE = 2.0 Vdc
IC = 5.0 Adc, VCE = 5.0 Vdc
IC = 50 mAdc, VCE = 2.0 Vdc
IC = 1.0 Adc, VCE = 2.0 Vdc
IC = 5.0 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 5.0 Adc, IB = 0.5 Adc
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 5.0 Adc, IB = 0.5 Adc
2N3996, 2N3998
hFE
2N3997, 2N3999
0.25
2.0
Vdc
0.6
1.2
1.6
Vdc
3.0
12
VCE(sat)
VBE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 5.0 Vdc, f = 10 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
Cobo
150
pF
SAFE OPERATING AREA
DC Tests
TC = 1000C, 1 Cycle, t = 1.0 s
Test 1
VCE = 80 Vdc, IC = 0.08 Adc
Test 2
VCE = 20 Vdc, IC = 1.5 Adc
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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