TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7225 2N7225U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS 200 Vdc Gate – Source Voltage VGS ± 20 Vdc ID1 27.4 Adc ID2 17 Adc Ptl 150 (1) W Rds(on) 0.1 (2) Ω Top, Tstg -55 to +150 °C Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation TC = +25°C Drain to Source On State Resistance Operating & Storage Temperature TO-254AA Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 17A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 200 Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C IGSS1 IGSS2 ±100 ±200 nAdc Drain Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 160V, Tj = +125°C IDSS1 IDSS2 25 0.25 µAdc mAdc rDS(on)1 rDS(on)2 0.100 0.105 Ω Ω rDS(on)3 0.17 Ω VSD 1.9 Vdc Static Drain-Source On-State Resistance VGS = 10V, ID = 17A pulsed VGS = 10V, ID = 27.4A pulsed Tj = +125°C VGS = 10V, ID = 17A pulsed Diode Forward Voltage VGS = 0V, ID = 27.4A pulsed T4-LDS-0048 Rev. 1 (072806) Max. Unit Vdc 4.0 Vdc 5.0 U-PKG (U3) TO-276AB Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol VGS = 10V, ID = 27.4A VDS = 50V Min. Qg(on) Qgs Qgd Max. 115 22 60 Unit nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = 27.4A, VGS = 10Vdc, Gate drive impedance = 7.5Ω, VDD = 100Vdc Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 30V, IF = 27.4A T4-LDS-0048 Rev. 1 (072806) Min. Max. td(on) tr td(off) tf 35 190 170 130 trr 950 Unit ns ns Page 2 of 2