MICROSEMI 2N6849U

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/564
DEVICES
LEVELS
2N6849
2N6849U
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
-100
Vdc
Gate – Source Voltage
VGS
± 20
Vdc
ID1
-6.5
Adc
ID2
-4.1
Adc
Continuous Drain Current
TC = +25°C
Continuous Drain Current
TC = +100°C
Max. Power Dissipation
(1)
W
Rds(on)
0.3 (2)
Ω
Top, Tstg
-55 to +150
°C
Ptl
Drain to Source On State Resistance
Operating & Storage Temperature
25
Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C
(2) VGS = -10Vdc, ID = -4.1A
SEE FIGURE 1
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Drain-Source Breakdown Voltage
VGS = 0V, ID = -1mAdc
V(BR)DSS
-100
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = -0.25mA
VDS ≥ VGS, ID = -0.25mA, Tj = +125°C
VDS ≥ VGS, ID = -0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
-2.0
-1.0
-5.0
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
Drain Current
VGS = 0V, VDS = -80V
VGS = 0V, VDS = -80V, Tj = +125°C
Static Drain-Source On-State Resistance
VGS = -10V, ID = -4.1A pulsed
VGS = -10V, ID = -6.5A pulsed
Tj = -125°C
VGS = -10V, ID = -4.1A pulsed
Diode Forward Voltage
VGS = 0V, ID = -6.5A pulsed
T4-LDS-0009 Rev. 2 (091456)
2N6849
TO-205AF
(formerly TO-39)
Max.
Unit
Vdc
-4.0
Vdc
IGSS1
IGSS2
±100
±200
nAdc
IDSS1
IDSS2
-25
-0.25
µAdc
mAdc
2N3849U
18 PIN LCC
rDS(on)1
rDS(on)2
0.3
0.32
Ω
Ω
SEE FIGURE 2
rDS(on)3
0.54
Ω
VSD
-4.3
Vdc
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/564
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
VGS = -10V, ID = -6.5A
VDS = -50V
Min.
Qg(on)
Qgs
Qgd
Max.
34.8
6.8
23.1
Unit
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = -6.5A, VGS = -10Vdc,
Gate drive impedance = 7.5Ω,
VDD = -40Vdc
Diode Reverse Recovery Time
di/dt ≤ -100A/µs, VDD ≤ -50V,
IF = -6.5A
T4-LDS-0009 Rev. 2 (091456)
Min.
Max.
td(on)
tr
td(off)
tf
60
140
140
140
trr
250
Unit
ns
ns
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/564
Figure 1 – Case Outline and PIN Configuration for 2N6849
T4-LDS-0009 Rev. 2 (091456)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/564
Figure 2 – Case Outline and PIN Configuration for 2N6849U
T4-LDS-0009 Rev. 2 (091456)
Page 4 of 4