TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-Channel Enhancement Mode Power Mosfet DEVICES MSAFX50N20A 200 Volts 50 Amps 45 mΩ FEATURES ¾ ¾ ¾ ¾ ¾ ¾ ¾ Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request Table 1 – ABSOLUTE MAXIMUM RATINGS (Tc = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Max. Unit BVDSS 200 V BVDGR 200 V Continuous Gate-to-Source Voltage VGS +/-20 V Transient Gate-to-Source Voltage VGSM ID25 ID100 IDM +/-30 50 40 200 V A Repetitive Avalanche Current IAR 50 A Repetitive Avalanche Energy EAR 30 mJ Single Pulse Avalanche Energy EAS TBD mJ dv/dt 5.0 V/ns Power Dissipation PD 300 W Junction Temperature Range Tj -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Continuous Source Current (Body Diode) IS 50 A Pulse Source Current (Body Diode) ISM 200 A Thermal Resistance, Junction to Case θJC 0.25 °C/W Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS = 1MΩ Continuous Drain Current TJ = 25°C TJ = 100°C Peak Drain Current, pulse width limited by TJmax Voltage Rate of Change of the Recovery Diode @ IS ≤ IDM, di/dt ≤ 100A /μs, VDD ≤ VDSS, TJ ≤ 150°C T4-LDS-0203 Rev. 1 (110640) A Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Table 2 – ELECTRICAL CHARACTERISTICS (Tc = +25°C unless otherwise noted) Parameters / Test Conditions Drain-to-Source Breakdown Voltage (Gate Shorted to Source) VGS = 0V, ID = 250μA Temperature Coefficient of the Drain-to-Source - Breakdown Voltage Gate Threshold Voltage VDS = VGS, ID = 4 mA Gate-to-Source Leakage Current VGS = ±20Vdc, VDS = 0 TJ = 25°C TJ = 125°C Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) VDS = 0.8 BVDSS, TJ = 25°C VGS = 0V, TJ = 125°C Static Drain-to-Source On-State Resistance (1) VGS= 10V, ID= 25A, TJ = 25°C VGS= 10V, ID = 50A TJ = 25°C VGS= 10V, ID = 25A TJ = 125°C Forward Transconductance (1) VDS ≥ 10V, ID = 50A Input Capacitance VGS = 0V, VDS = 25V, f = 1MHz Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz Reverse Transfer Capacitance VGS = 0V, VDS = 25V, f = 1MHz Turn-on Delay Time Rise Time Turn-off Delay Time VGS = 10V, VDS = 100V, ID = 25A, RG = 2.00Ω Fall Time Total Gate Charge Gate-to-Source Charge VGS = 10V, VDS = 100V, ID = 25A Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) IF = IS, VGS = 0V Reverse Recovery Time (Body Diode) IF = 10A, TJ = 25°C -di/dt = 100 A / μs, TJ = 125°C Reverse Recovery Charge IF = 10A, TJ = 25°C di/dt = 100A / μs, TJ = 125°C T4-LDS-0203 Rev. 1 (110640) Symbol Min. BVDSS 200 ΔBVDSS /ΔTJ VGS(th) Typ Max. Unit V TBD 2.0 4.0 IGSS ±100 ±200 IDSS 200 1000 0.045 0.055 RDS(on) nA µA Ω 0.09 32 S Ciss 4400 pF Coss 500 pF Crss 285 pF td(on) 20 25 nS tr 45 50 nS td(off) 75 90 nS tf 20 25 nS Qg(on) 190 220 nC Qgs 35 50 nC Qgd 95 110 nC VSD 1.5 V trr 200 300 nS Qrr 1.5 2.6 µC gfs 26 Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS T4-LDS-0203 Rev. 1 (110640) Page 3 of 3