isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1390 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operated horizontal deflection output applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER VALUE UNIT 1500 V 1500 V VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 1 A ICP Collector Current-Pulse 2.5 A PC Collector Power Dissipation @ TC≤90℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg w w Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1390 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A 1.5 V VCB= 750V; IE= 0 50 μA VCB= 1500V; IE= 0 1 mA ICBO hFE tf tstg 5 UNIT B B V Collector Cutoff Current DC Current Gain w. Fall Time w w Storage Time n c . i m e s c is IC= 2A; VCE= 5V isc Website：www.iscsemi.cn 2 7 1 μs 11 μs IC= 2.5A, IBend= 1.1A, LB= 10μH B 2