ISC KSD5017

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
KSD5017
DESCRIPTION
·High Breakdown Voltage: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
6
A
ICP
Collector Current-Peak
16
A
PC
Collector Power Dissipation
@ TC=25℃
60
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
KSD5017
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1A
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
1
mA
hFE
DC Current Gain
IC= 1A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
tf
Fall Time
IC= 5A , IB1= 1A ; IB2= -2A
RL= 40Ω; VCC= 200V
isc Website:www.iscsemi.cn
B
B
2
8
3
MHz
0.4
μs