isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC937 DESCRIPTION ·High Breakdown Voltage: VCBO= 1200V(Min) ·High Reliability APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s i . w w w 1200 V 500 V 6 V 2.5 A IC Collector Current- Continuous ICP Collector Current-Pulse 6 A PC Collector Power Dissipation @ TC= 25℃ 22 W TJ Junction Temperature 125 ℃ -45~125 ℃ Tstg n c . i m e UNIT Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC937 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.8 V ICBX Collector Cutoff Current VCB= 1200V; VEB= 1.5V 1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 0.2 mA IC= 2.5A, IB1= 0.8A, IB2= -1.1A; LB= 10μH 1.2 μs tf CONDITIONS . w w isc Website：www.iscsemi.cn 2 TYP. MAX 500 n c . i m e s c is Fall Time w MIN UNIT V