isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1847 DESCRIPTION ·Collector-Base Breakdown Voltage: VCBO= 1500V (Min.) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output applications . n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER ww VCBO Collector- Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage w VALUE UNIT 1500 V 1500 V 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 15 A Base Current- Continuous 2 A Collector Power Dissipation @ Ta=25℃ 3 IB B PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 100 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1847 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1500V; IE= 0 10 1.0 μA mA hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 4A; VCE= 10V fT VECF w w C-E Diode Forward Voltage Switching times, Resistive Load tstg tf Storage Time B 5 n c . i m e IC= 1A; VCE= 10V IF= 5A 25 4 2 2 MHz 2.3 V 1.5 μs 0.2 μs IC= 4A; IB1= 1A; IB2= -2A; VCC= 200V Fall Time isc Website：www.iscsemi.cn V B s c s i . w Current-Gain—Bandwidth Product 7 UNIT