isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1576 DESCRIPTION ·High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 2 A ICM Collector Current-Peak 6 A IBM Base Current-Peak 2.5 A Collector Power Dissipation @ Ta=25℃ 2.5 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 80 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1576 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) V(BR)EBO MAX UNIT IC= 2A; IB= 1A 5.0 V Base-Emitter Saturation Voltage IC= 2A; IB= 1A 1.5 V Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1500V; IE= 0 hFE DC Current Gain IC= 2A; VCE= 5V Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; ftest= 0.5MHz fT CONDITIONS MIN TYP. B B 6 V 50 1.0 μA mA 2 2 MHz Switching times tstg Storage Time 9.0 μs 1.0 μs IC= 2.5A , IB= 1.1A; LB= 10μH tf Fall Time isc Website：www.iscsemi.cn 2