isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3479 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V 2.5 A IC Collector Current- Continuous ICP Collector Current-Pulse 8 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3479 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 40 130 mA hFE DC Current Gain IC= 0.5A; VCE= 5V 8 VECF C-E Diode Forward Voltage IF= 2.5A 2.0 V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V tf Fall Time IC= 2A, IB1= 0.4A; IB2= -0.8A isc Website：www.iscsemi.cn CONDITIONS 2 MIN TYP. MAX 3 UNIT MHz 0.3 μs