isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11AFI · DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems n c . i m e ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCES Collector-Emitter Voltage VBE= 0 VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s .i w w w 1000 V 450 V 9 V 5 A IC Collector Current-Continuous ICM Collector Current-Peak 10 A IB Base Current 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @TC=25℃ 35 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.57 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11AFI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.3 V ICES Collector Cutoff Current VCE= 1000V; VBE= 0 VCE= 1000V; VBE= 0; Tj= 125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 10 mA hFE-1 DC Current Gain hFE-2 DC Current Gain w w ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn TYP. MAX 450 n c . i m e s c is w. Switching Times; Resistive Load MIN V IC= 5mA; VCE= 5V 10 35 IC= 0.5A; VCE= 5V 10 35 IC= 2.5A; IB1= -IB2= 0.5A; VCC= 250V UNIT 1.0 μs 4.0 μs 0.8 μs