isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT131H DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 4 A IBM Base Current-Peak 8 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.56 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT131H ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0; L= 10mH 450 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.5 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.5 V ICEV Collector Cutoff Current VCE=VCESmax;VBE=-1.5V VCE=VCESmax;VBE=-1.5V;TJ=100℃ 0.25 1.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 1.0 mA hFE DC Current Gain IC= 5A ; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1kHz 200 pF VBE(sat) B TYP. MAX UNIT V B B 5 Switching Times; Resistive Load ton Turn-On Time tstg Storage Time tf IC= 3A; IB1= 0.3A; IB2= -0.6A Fall Time isc Website：www.iscsemi.cn 2 0.4 μs 1.2 μs 0.12 μs