isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11F · DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @TC=25℃ 20 W Tj Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.95 K/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.3 V ICES Collector Cutoff Current VCE= 850V; VBE= 0 VCE= 850V; VBE= 0; Tj= 125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 10 mA hFE-1 DC Current Gain IC= 5mA ; VCE= 5V 10 35 hFE-2 DC Current Gain IC= 0.5A ; VCE= 5V 10 35 450 UNIT V Switching Times; Resistive Load ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 2.5A; IB1= -IB2= 0.5A 1.0 μs 4.0 μs 0.8 μs