Inchange Semiconductor Product Specification S2000A1 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PH package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal output applications ·Color TV switching regulator applications PINNING(See Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PH) and symbol ABOSOLUTE MAXIMUM RATINGS (TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 15 A IB Base current 4 A PC Collector power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification S2000A1 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 VCE(sat) Collector-emitter saturation voltage IC=4.5A ;IB=2A 1.0 V VBE(sat) Base-emitter saturation voltage IC=4.5A ;IB=2.0A 1.5 V ICBO Collector cut-off current VCB=1500V; VBE=0 1 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 40 hFE-2 DC current gain IC=4.5A ; VCE=5V 4.5 9 COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF Transition frequency IC=0.1A ; VCE=10V 2 MHz fT CONDITIONS 2 MIN TYP. MAX UNIT 700 V 5 V Inchange Semiconductor Product Specification S2000A1 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3