H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS z UL recognised, File No. E91231 Package System " GG " 'X' SPECIFICATION APPROVALS z z VDE 0884 in 3 available lead form : - STD - G form 2.54 7.0 6.0 1 2 6 5 3 4 1.2 - SMD approved to CECC 00802 Certified to EN60950 by Nemko - Certificate No. P01102464 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 3.0 DESCRIPTION The H11AV series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z High BVCEO (70V min) z All electrical parameters 100% tested z Custom electrical selections available APPLICATIONS z DC motor controllers z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances OPTION SM OPTION G SURFACE MOUNT 7.62 0.5 3.35 0.26 ABSOLUTEMAXIMUMRATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUTDIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Collector Current Power Dissipation 70V 70V 6V 50mA 160mW POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) 10.16 ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 17/7/08 DB92055 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 1.5 V IF = 10mA 10 μA VR = 6V 70 V IC = 1mA 70 6 V V nA IC = 100μA IE = 100μA VCE = 10V 300 % % % 10mA IF , 10V VCE 10mA IF , 10V VCE 10mA IF , 10V VCE 0.4 V 20mA IF , 2mA IC VRMS VPK See note 1 See note 1 Ω VIO = 500V (note 1) μs μs VCC = 5V , fig 1 IF= 10mA, RL = 75Ω Reverse Current (IR) Output Coupled Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 50 Current Transfer Ratio (CTR) H11AV1 H11AV2 H11AV3 100 50 20 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Rise Time, tr Fall Time, tf Note 1 Note 2 TEST CONDITION 2 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC Input ton toff RL = 75Ω tr Output tf Output 10% 10% 90% 90% FIG 1 17/7/08 DB92055m-AAS/A3 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 150 100 50 -30 0 25 50 75 100 15 20 10 10 IF = 5mA 0 2 4 6 8 Collector-emitter voltage VCE ( V ) Forward Current vs. Ambient Temperature Collector-emitter Saturation Voltage vs. Ambient Temperature 60 50 40 30 20 10 0 1.5 0.24 IF = 20mA IC = 2mA 0.20 0.16 0.12 0.08 0.04 0 Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 25 50 75 100 125 IF = 10mA VCE = 10V 1.0 0.5 10 0.28 0 25 50 75 Ambient temperature TA ( °C ) 0 Relative current transfer ratio -30 Collector-emitter saturation voltage VCE(SAT) (V) Ambient temperature TA ( °C ) 70 Forward current IF (mA) 20 30 125 80 Relative current transfer ratio 50 30 40 0 0 -30 100 1.4 1.2 1.0 0.8 0.6 0.4 VCE = 10V TA = 25°C 0.2 0 0 -30 17/7/08 TA = 25°C 50 Collector current IC (mA) Collector power dissipation PC (mW) 200 0 25 50 75 Ambient temperature TA ( °C ) 100 1 2 5 10 20 50 Forward current IF (mA) DB92055m-AAS/A3