ISSI IS42S32160A

IS42S32160A
4M Words x 32 Bits x 4 Banks (512-MBIT)
SYNCHRONOUS DYNAMIC RAM
PRELIMINARY INFORMATION
JULY 2009
FEATURES
· Concurrent auto precharge
· Clock rate: 133 MHz
· Fully synchronous operation
· Internal pipelined architecture
· Four internal banks (4M x 32bit x 4bank)
· Programmable Mode
-CAS#Latency:2 or 3
-Burst Length:1,2,4,8,or full page
-Burst Type:interleaved or linear burst
· Burst stop function
· Individual byte controlled by DQM0-3
· Auto Refresh and Self Refresh
· 8K refresh cycles/64ms
· 8K refresh cycles/32ms for Industrial grade
· Single +3.3V ±0.3V power supply
· Interface:LVTTL
· Package: 8x13mm, 90 Ball LF-BGA, Ball pitch 0.8mm,
Ball size 0.45mm
· Pb-free package is available.
· Available in Industrial Temperature
DESCRIPTION
The ISSI IS42S32160A is a high-speed CMOS
configured as a quad 4M x 32 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal,CLK).
It is internally configured by stacking two 256Mb,
16 Meg x 16 devices. Each of the 4M x 32 bit banks is
organized as 8192 rows by 512 columns by 32 bits.
Read and write accesses start at a selected locations
in a programmed sequence. Accesses begin with
the registration of a BankActive command which is
then followed by a Read or Write command.
The ISSI IS42S32160A provides for programmable
Read or Write burst lengths of 1,2,4,8,or full page, with
a burst termination operation. An auto precharge
function may be enable to provide a self-timed row
precharge that is initiated at the end of the burst
sequence.The refresh functions, either Auto or
Self Refresh are easy to use.
By having a programmable mode register,the system
can choose the most suitable modes to maximize its
performance.
These devices are well suited for applications requiring
high memory bandwidth.
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
1
IS42S32160A
FUNCTIONAL BLOCK DIAGRAM 16 Meg x 16 SDRAM
CLK
CKE
CS
RAS
CAS
WE
DQML
DQMH
DATA IN
BUFFER
COMMAND
DECODER
&
CLOCK
GENERATOR
16
MODE
REGISTER
13
2
SELF
DQ 0-15
VDD/VDDQ
DATA OUT
BUFFER
REFRESH
A10
A12
CONTROLLER
A11
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
BA1
16
REFRESH
CONTROLLER
Vss/VssQ
16
16
13
ROW
ADDRESS
LATCH
13
13
ROW
ADDRESS
BUFFER
ROW DECODER
MULTIPLEXER
REFRESH
COUNTER
8192
8192
8192
8192
MEMORY CELL
ARRAY
BANK 0
SENSE AMP I/O GATE
512
(x 16)
COLUMN
ADDRESS LATCH
BANK CONTROL LOGIC
9
BURST COUNTER
COLUMN DECODER
COLUMN
ADDRESS BUFFER
9
Function Block Diagram – 16Meg x 32 SDRAM
CS
CLK
CKE#
Die 01
Die 02
Command
Addresses
DQ0 –DQ31
2
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
PIN DESCRIPTIONS
Table 1.Pin Details of IS42S32160A
Symbol Type
Description
CLK
Input
Clock:CLK is driven by the system clock.All SDRAM input signals are sampled on the positive edge
of CLK.CLK also increments the internal burst counter and controls the output registers.
CKE
Input
Clock Enable:CKE activates(HIGH)and deactivates(LOW)the CLK signal.If CKE goes low synchronously with clock(set-up and hold time same as other inputs),the internal clock is suspended
from the next clock cycle and the state of output and burst address is frozen as long as the CKE
remains low.When all banks are in the idle state,deactivating the clock controls the entry to the
Power Down and Self Refresh modes.CKE is synchronous except after the device enters Power
Down and Self Refresh modes,where CKE becomes asynchronous until exiting the same mode.
The input buffers,including CLK,are disabled during Power Down and Self Refresh modes,providing
low standby power.
Bank Select:BS0 and BS1 defines to which bank the BankActivate,Read,Write,or BankPrecharge
command is being applied.
Address Inputs:A0-A12 are sampled during the BankActivate command (row address A0-A12) and
Read/Write command (column address A0-A8 with A10 defining Auto Precharge) to select one
location in the respective bank.During a Precharge command,A10 is sampled to determine if all
banks are to be precharged (A10 =HIGH).
BS0,BS1 Input
A0-A12 Input
The address inputs also provide the op-code during a Mode Register Set .
CS#
Input
Chip Select:CS#enables (sampled LOW)and disables (sampled HIGH)the command decoder.All
commands are masked when CS#is sampled HIGH.CS#provides for external bank selection on
systems with multiple banks.It is considered part of the command code.
RAS#
Input
Row Address Strobe:The RAS#signal defines the operation commands in conjunction with the
CAS#and WE#signals and is latched at the positive edges of CLK.When RAS# and CS#are asserted “LOW”and CAS#is asserted “HIGH,”either the BankActivate command or the Precharge
command is selected by the WE#signal.When the WE#is asserted “HIGH,”the BankActivate command is selected and the bank designated by BS is turned on to the active state.When the WE#is
asserted “LOW,”the Precharge command is selected and the bank designated by BS is switched to
the idle state after the precharge operation.
CAS#
Input
Column Address Strobe:The CAS#signal defines the operation commands in conjunction with the
RAS#and WE#signals and is latched at the positive edges of CLK. When RAS#is held “HIGH”and
CS#is asserted “LOW,”the column access is started by asserting CAS#”LOW.”Then,the Read or
Write command is selected by asserting WE# “LOW”or “HIGH.”
WE#
Input
Write Enable:The WE#signal defines the operation commands in conjunction with the RAS#and
CAS#signals and is latched at the positive edges of CLK.The WE#input is used to select the
BankActivate or Precharge command and Read or Write command.
DQM0-3 Input
Data Input/Output Mask:DQM0-DQM3 are byte specific,nonpersistent I/O buffer controls. The I/O
buffers are placed in a high-z state when DQM is sampled HIGH.Input data is masked when DQM
is sampled HIGH during a write cycle.Output data is masked (two-clock latency)when DQM is
sampled HIGH during a read cycle.DQM3 masks DQ31-DQ24,DQM2 masks DQ23-DQ16,DQM1
masks DQ15-DQ8,and DQM0 masks DQ7-DQ0.
DQ0-31 Input/Output Data I/O:The DQ0-31 input and output data are synchronized with the positive edges of
CLK.The I/Os are byte-maskable during Reads and Writes.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
1
3
IS42S32160A
PIN CONFIGURATION
PACKAGE CODE: B 90 BALL LF-BGA (Top View) (8.00 mm x 13.00 mm Body, 0.8 mm Ball Pitch)
1 2 3 4 5 6 7 8 9
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
DQ26 DQ24
VSS
VDD DQ23 DQ21
DQ28 VDDQ VSSQ
VDDQ VSSQ DQ19
VSSQ DQ27 DQ25
DQ22 DQ20 VDDQ
VSSQ DQ29 DQ30
DQ17 DQ18 VDDQ
VDDQ DQ31
NC
NC
DQ16 VSSQ
VSS DQM3
A3
A2
DQM2 VDD
A4
A5
A6
A10
A0
A1
A7
A8
A12
NC
BA1
A11
CLK
CKE
A9
BA0
CS
RAS
DQM1
NC
NC
CAS
WE DQM0
VDDQ DQ8
VSS
VDD
DQ7 VSSQ
VSSQ DQ10 DQ9
DQ6
DQ5 VDDQ
VSSQ DQ12 DQ14
DQ1
DQ3 VDDQ
DQ11 VDDQ VSSQ
DQ13 DQ15
VDDQ VSSQ DQ4
VSS
VDD
DQ0
DQ2
PIN DESCRIPTIONS
4
A0-A12
Row Address Input
WE
Write Enable
A0-A8
Column Address Input
DQM0-DQM3
x32 Input/Output Mask
BA0, BA1
Bank Select Address
VDD
Power
DQ0 to DQ31
Data I/O
Vss
Ground
CLK
System Clock Input
VDDQ
Power Supply for I/O Pin
CKE
Clock Enable
VssQ
Ground for I/O Pin
CS
Chip Select
NC
No Connection
RAS
Row Address Strobe Command
CAS
Column Address Strobe Command
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
Operation Mode
Fully synchronous operations are performed to latch the commands at the positive edges of CLK.Table 2 shows the truth
table for the operation commands.
Table 2.Truth Table (Note (1),(2))
Command
State
CKEn-1 CKE
DQM(6) BS0,1
BankActivate
Idle (3)
H
X
X
V
A10
A12, A11
A9-0
Row address
CS# RAS# CAS# WE#
L
L
H
H
BankPrecharge
Any
H
X
X
V
L
X
L
L
H
L
PrechargeAll
Any
H
X
X
X
H
X
L
L
H
L
Write
Active (3)
H
X
X
V
L
H
L
L
H
X
X
V
H
Column
address
(A0 ~A8)
L
Write and Auto Precharge Active (3)
L
H
L
L
Read
Active (3)
H
X
X
V
L
L
H
L
H
Read and Autoprecharge
Active
H
X
X
V
H
Column
address
(A0 ~A8)
L
H
L
H
Mode Register
Set Idle
H
X
X
No-Operation
Any
H
X
X
Burst Stop
Active(4)
H
X
X
X
X
X
L
H
H
L
Device Deselect
Any
H
X
X
X
X
X
H
X
X
X
(3)
X
OP code
L
L
L
L
X
L
H
H
H
X
AutoRefresh
Idle
H
H
X
X
X
X
L
L
L
H
SelfRefresh Entry
Idle
H
L
X
X
X
X
L
L
L
H
SelfRefresh Exit
Idle
L
H
X
X
X
X
H
X
X
X
L
H
H
H
(SelfRefresh)
Clock Suspend Mode Entry Active
H
L
X
X
X
X
X
X
X
X
Power Down Mode Entry
Any(5)
H
L
X
X
X
X
H
X
X
X
L
H
H
H
Clock Suspend Mode Exit Active
L
H
X
X
X
X
X
X
X
X
Power Down Mode Exit
L
H
X
X
X
X
Any
(PowerDown)
H
X
X
X
L
H
H
H
Data Write/Output Enable Active
H
X
L
X
X
X
X
X
X
X
Data Mask/Output Disable Active
H
X
H
X
X
X
X
X
X
X
Note:
1. V =Valid,X =Don ’t care,L =Logic low,H =Logic high
2. CKEn signal is input level when commands are provided.
CKEn-1 signal is input level one clock cycle before the commands are provided.
3. These are states of bank designated by BS signal.
4. Device state is 1,2,4,8,and full page burst operation.
5. Power Down Mode can not enter in the burst operation.
When this command is asserted in the burst cycle,device state is clock suspend mode.
6. DQM0-3
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
5
IS42S32160A
I
I
®
Commands
1
BankActivate
(RAS#=”L”,CAS#=”H”,WE#=”H”,BS =Bank,A0-A12 =Row Address)
The BankActivate command activates the idle bank designated by the BS0,1 (Bank Select) signal.By latching the
row address on A0 to A12 at the time of this command,the selected row access is initiated.The read or write
operation in the same bank can occur after a time delay of tRCD(min.)from the time of bank activation.A
subsequent BankActivate command to a different row in the same bank can only be issued after the previous
active row has been precharged (refer to the following figure).The minimum time interval between successive
BankActivate commands to the same bank is defined by tRC(min.).The SDRAM has four internal banks on the
same chip and shares part of the internal circuitry to reduce chip area;therefore it restricts the back-to-back
activation of the four banks.tRRD(min.)specifies the minimum time required between activating different banks.
After this command is used,the Write command and the Block Write command perform the no mask write
operation.
T0
T1
T2
T3
Tn+3
CLK
Tn+4
Tn+5
Tn+6
..............
ADDRESS
Bank A
Row Addr.
Bank A
Col Addr.
..............
Bank B
Row Addr.
R/W A with
AutoPrecharge
..............
Bank B
Activate
RAS#- RAS# delay time (tRRD)
RAS# - CAS# delay (tRCD)
COMMAND
Bank A
Activate
NOP
NOP
Bank A
Row Addr.
NOP
NOP
Bank A
Activate
RAS# Cycle time (tRC)
:"H" or "L"
2
Bank
Auto Precharge
Begin
BankPrecharge command
(RAS#=”L”,CAS#=”H”,WE#=”L”,BS =Bank,A10 =”L”)
The BankPrecharge command precharges the bank disignated by BS0,1 signal.The
precharged bank is switched from the active state to the idle state.This command can be asserted anytime after
tRAS(min.)is satisfied from the BankActivate command in the desired bank.The maximum time any bank can be
active is specified by tRAS(max.).Therefore,the precharge function must be performed in any active bank within
tRAS(max.).At the end of precharge,the precharged bank is still in the idle state and is ready to be activated again.
6
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
3
PrechargeAll command
(RAS#=”L”,CAS#=”H”,WE#=”L”,BS =Don t care,A10 =”H”)
The Precharge All command precharges all the four banks simultaneously and can be issued even if all banks are
not in the active state. All banks are then switched to the idle state.
4
Read command
(RAS#=”H”,CAS#=”L”,WE#=”H”,BS =Bank,A10 =”L”,A0-A8 =Column Address)
The Read command is used to read a burst of data on consecutive clock cycles from an active row in an active
bank.The bank must be active for at least tRCD(min.) before the Read command is issued.During read bursts,
the valid data-out element from the starting column address will be available following the CAS# latency after the
issue of the Read command.Each subsequent data- out element will be valid by the next positive clock edge (refer
to the following figure).The DQs go into high-impedance at the end of the burst unless other command is initiated.
The burst length,burst sequence,and CAS# latency are determined by the mode register which is already
programmed.A full-page burst will continue until terminated (at the end of the page it will wrap to column 0 and
continue).
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
7
IS42S32160A
T0
T1
READ A
NOP
T2
T3
T4
T5
T6
NOP
NOP
NOP
DOUT A1
DOUT A2
T7
T8
CLK
COMMAND
NOP
DOUT A0
CAS# latency=2
t CK2 , DQ s
DOUT A0
CAS# latency=3
t CK3 , DQ s
DOUT A1
NOP
NOP
NOP
DOUT A3
DOUT A2
DOUT A3
Burst Read Operation(Burst Length =4,CAS#Latency =2,3)
The read data appears on the DQs subject to the values on the DQM inputs two clocks earlier (i.e.DQM latency is two clocks
for output buffers). A read burst without the auto precharge function may be interrupted by a subsequent Read or Write
command to the same bank or the other active bank before the end of the burst length.It may be interrupted by a
BankPrecharge/PrechargeAll command to the same bank too.The interrupt coming from the Read command can occur on
any clock cycle following a previous Read command (refer to the following figure).
T0
T1
T2
T3
T4
NOP
NOP
DOUT B0
DOUT B1
T5
T6
T7
NOP
NOP
T8
CLK
COMMAND
READ A
CAS# latency=2
t CK2 , DQ s
CAS# latency=3
t CK3 , DQ s
READ B
NOP
DOUT A0
DOUT A 0
DOUT B0
DOUT B2
DOUT B1
NOP
NOP
DOUT B3
DOUT B2
DOUT B3
Read Interrupted by a Read (Burst Length =4,CAS#Latency =2,3)
The DQM inputs are used to avoid I/O contention on the DQ pins when the interrupt comes from a Write command.The
DQMs must be asserted (HIGH)at least two clocks prior to the Write command to suppress data-out on the DQ pins.To
guarantee the DQ pins against I/O contention,a single cycle with high-impedance on the DQ pins must occur between the
last read data and the Write command (refer to the following three figures).If the data output of the burst read occurs at the
second clock of the burst write,the DQMs must be asserted (HIGH)at least one clock prior to the Write command to avoid
internal bus contention.
8
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
T0
T1
T2
T3
T4
NOP
NOP
T5
T6
T7
T8
CLK
DQM
COMMAND
NOP
READ A
DQ’s
NOP
NOP
WRITE B
DOUT A
DINB 0
NOP
DINB 1
NOP
DINB 2
Must be Hi-Z before
the Write Command
: "H" or "L"
Read to Write Interval (Burst Length = 4,CAS#Latency =3)
T0
T1
T2
T3
T4
CLK
T5
T6
T7
T8
1 Clk Interval
DQM
COMMAND
NOP
NOP
BANKA
ACTIVAT E
NOP
READ A
WRITEA
NOP
DIN A0
DIN A1
CAS# latency=2
tCK2, DQs
: "H" or "L"
NOP
NOP
DIN A2
DIN A3
Read to Write Interval (Burst Length = 4,CAS#Latency =2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
DQM
COMMAND
NOP
NOP
READ A
NOP
CAS# latency=2
t CK2 ,tCK2,
DQ’s DQs
NOP
WRITEB
NOP
DIN B0
DIN B1
NOP
NOP
DIN B2
DIN B3
: "H" or "L"
Read to Write Interval (Burst Length = 4,CAS#Latency =2)
A read burst without the auto precharge function may be interrupted by a BankPrecharge/
PrechargeAll command to the same bank.The following figure shows the optimum time that
BankPrecharge/PrechargeAll command is issued in different CAS#latency.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
9
IS42S32160A
I
B
T0
T1
T2
T3
T4
T5
T6
T7
®
T8
CLK
ADDRESS
Bank,
Col A
Bank,
Row
Bank(s)
tRP
COMMAND
READ A
NOP
CAS# latency=2
t CK2 , DQ s
NOP
DOUT A 0
CAS# latency=3
t CK3 , DQ s
NOP
Precharge
NOP
DOUT A 1
DOUT A 2
DOUT A 3
DOUT A 0
DOUT A 1
DOUT A 2
NOP
Activate
NOP
DOUT A 3
Read to Precharge (CAS#Latency =2,3)
5
Write command
(RAS#=”H”,CAS#=”L”,WE#=”L”,BS =Bank,A10 =”L”,A0-A8 =Column Address)
The Write command is used to write a burst of data on consecutive clock cycles from an active row in an active
bank.The bank must be active for at least tRCD(min.)before the Write command is issued.During write bursts,
the first valid data-in element will be registered coincident with the Write command.Subsequent data elements
will be registered on each successive positive clock edge (refer to the following figure).The DQs remain with highimpedance at the end of the burst unless another command is initiated.The burst length and burst sequence are
determined by the mode register,which is already programmed.A full-page burst will continue until terminated (at
the end of the page it will wrap to column 0 and continue).
T0
T1
T2
T3
T4
T5
T6
T7
T8
WRITEA
I
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DIN A 0
DIN A1
DIN A 2
DIN A 3
don’t care
CLK
COMMAND
DQ0 - DQ3
NOP
The first data element and the write
are registered on the same clock edge.
Extra data is masked.
Burst Write Operation (Burst Length =4,CAS#Latency =2,3)
A write burst without the AutoPrecharge function may be interrupted by a subsequent Write, BankPrecharge/
PrechargeAll,or Read command before the end of the burst length.An interrupt coming from Write command can
occur on any clock cycle following the previous Write command (refer to the following figure).
10
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
T0
T1
T2
T3
T4
T5
T6
T8
T7
CLK
NOP
COMMAND
WRITEA
WRITEB
NOP
NOP
NOP
DIN B1
DIN B2
DIN B3
NOP
NOP
NOP
1 Clk Interval
DIN A0
DQ’s
DIN B0
Write Interrupted by a Write (Burst Length =4,CAS#Latency =2,3)
The Read command that interrupts a write burst without auto precharge function should be issued one cycle after
the clock edge in which the last data-in element is registered.In order to avoid data contention,input data must
be removed from the DQs at least one clock cycle before the first read data appears on the outputs (refer to the
following figure).Once the Read command is registered,the data inputs will be ignored and writes will not be
executed.
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
NOP
COMMAND
WRITEA
NOP
READ B
CAS# latency=2
t CK2 , DQ’s
DIN A0
don’t care
CAS# latency=3
t CK3 , DQ’s
DIN A0
don’t care
NOP
DOUT B0
DOUT B2
DOUT B1
DOUT B0
don’t care
Input data for the write is masked.
NOP
NOP
NOP
NOP
DOUT B3
DOUT B1
DOUT B2
DOUT B3
Input data must be removed from the DQs at least one clock
cycle before the Read data appears on the outputs to avoid
data contention.
DI N
Write Interrupted by a Read (Burst Length =4,CAS#Latency =2,3)
The BankPrecharge/PrechargeAll command that interrupts a write burst without the auto precharge function
should be issued m cycles after the clock edge in which the last data-in element is registered,where m equals tWR/
tCK rounded up to the next whole number.In addition,the DQM signals must be used to mask input data,starting
with the clock edge following the last data-in element and ending with the clock edge on which the BankPrecharge/
PrechargeAll command is entered (refer to the following figure).
T0
T1
T2
T3
T4
T5
T6
Activate
NOP
CLK
DQM
t RP
COMMAND
WRITE
ADDRESS
BANK
COL n
NOP
Precharge
NOP
NOP
BANK (S)
ROW
t WR
DIN
n
DQ
n+1
: don t care
Note:The DQMs can remain low in this example if the length of the write burst is 1 or 2.
Write to Precharge
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
11
IS42S32160A
6
Concurrent Auto Precharge
An access command (READ or WRITE) to another bank while an access command with auto precharge enabled
is executing is not allowed by SDRAMs, unless the SDRAM supports CONCURRENT AUTO PRECHARGE.
ICSI SDRAMs support CONCURRENT AUTO PRECHARGE. Four cases where CONCURRENT AUTO
PRECHARGE occurs are defined below.
READ with Auto Precharge
· Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a READ on bank n,
CAS latency later. The PRECHARGE to bank n will begin when the READ to bank m is regis-tered.
READ With Auto Precharge Interrupted by a READ
T0
T1
T2
T3
T4
T5
T6
T7
CLK
COMMAND
NOP
BANK n
Internal
States
READ - AP
BANK n
Page Active
READ - AP
BANK m
NOP
READ with Burst of 4
NOP
NOP
NOP
NOP
Interrupt Burst, Precharge
Idle
t RP - BANK m
t RP - BANK n
Page Active
BANK m
BANK n,
COL a
ADDRESS
Precharge
READ with Burst of 4
BANK m,
COL d
DOUT
a+1
DOUT
a
DQ
DOUT
d
DOUT
d+1
CAS Latency = 3 (BANK n)
CAS Latency = 3 (BANK m)
NOTE: DQM is LOW.
DON T CARE
· Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will interrupt a READ on bank n
when registered. DQM should be used two clocks prior to the WRITE command to prevent bus contention. The
PRECHARGE to bank n will begin when the WRITE to bank m is registered.
READ With Auto Precharge Interrupted by a WRITE
T0
T1
T2
T3
T4
T5
T6
T7
CLK
COMMAND
BANK n
Internal
States
READ - AP
BANK n
Page
Active
NOP
NOP
NOP
WRITE - AP
BANK m
READ with Burst of 4
NOP
NOP
Interrupt Burst, Precharge
Idle
t RP - BANK n
Page Active
BANK m
ADDRESS
DQM
NOP
Write-Back
WRITE with Burst of 4
BANK n,
COL a
t WR - BANK m
BANK m,
COL d
1
DOUT
a
DQ
DIN
d
DIN
d+1
DIN
d+2
DIN
d+3
CAS Latency = 3 (BANK n)
NOTE: 1. DQM is HIGH at T2 to prevent D
OUT-a+1
from contending with D
IN-d
at T4.
DON’T CARE
12
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
I
IS42S32160A
I
®
WRITE with Auto Precharge
· Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a WRITE on bank n
when registered, with the data-out ap- pearing CAS latency later. The PRECHARGE to bank n will begin after
t WR is met, where t WR begins when the READ to bank m is registered. The last valid WRITE to bank n will
be data-in registered one clock prior to the READ to bank m.
WRITE With Auto Precharge Interrupted by a READ
T0
T1
T2
T3
T4
T5
T6
T7
CLK
COMMAND
BANK n
Internal
States
WRITE - AP
BANK n
NOP
Page Active
NOP
READ - AP
BANK m
WRITE with Burst of 4
NOP
NOP
Interrupt Burst, Write-Back
Page Active
t RP - BANK m
BANK m,
COL d
DIN
a
DQ
Precharge
READ with Burst of 4
BANK n,
COL a
ADDRESS
NOP
t RP - BANK n
t WR - BANK n
BANK m
NOP
DOUT
d+1
DOUT
d
DIN
a+1
CAS Latency = 3 (BANK m)
NOTE: 1. DQM is LOW.
DON’T CARE
· Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will interrupt a WRITE on bank
n when registered. The PRECHARGE to bank n will begin after t WR is met, where t WR begins when the WRITE
to bank m is registered. The last valid data WRITE to bank n will be data registered one clock prior to a WRITE
to bank m.
WRITE With Auto Precharge Interrupted by a WRITE
T0
COMMAND
BANK n
Internal
States
NOP
Page Active
T1
WRITE - AP
BANK n
T2
T4
T5
WRITE - AP
BANK m
NOP
WRITE with Burst of 4
NOP
Interrupt Burst, Write-Back
t WR - BANK n
BANK m
ADDRESS
Page Active
T6
T7
NOP
NOP
Precharge
t RP - BANK n
t WR - BANK m
Write-Back
WRITE with Burst of 4
BANK n,
COL a
DIN
a
BANK m,
COL d
DIN
a+1
NOTE: 1. DQM is LOW.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
T3
DIN
a+2
DIN
d
DIN
d+1
DIN
d+2
DIN
d+3
DON’T CARE
13
IS42S32160A
7
14
Mode Register Set command
(RAS#=”L”,CAS#=”L”,WE#=”L”,BS0,1 and A12-A0 =Register Data)
The mode register stores the data for controlling the various operating modes of SDRAM.The Mode Register Set
command programs the values of CAS#latency,Addressing Mode and Burst Length in the Mode register to make
SDRAM useful for a variety of different applications.The default values of the Mode Register after power-up are
undefined;therefore this command must be issued at the power-up sequence.The state of pins BS0,1 and
A12~A0 in the same cycle is the data written to the mode register.One clock cycle is required to complete the write
in the mode register (refer to the following figure).The contents of the mode register can be changed using the
same command and the clock cycle requirements during operation as long as all banks are in the idle state.
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
I
I IS42S32160A
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
®
T10
CLK
tCK2
CKE
Clock min.
CS#
RAS#
CAS#
WE#
Address Key
ADDR.
DQM
DQ
tRP
Hi-Z
Precharge All
Mode Register
Set Command
Any
Command
Mode Register Set Cycle
The mode register is divided into various fields depending on functionality.
Address BS0,1 A12-A10
Function
RFU*
A9
WBL
A8
A7
Test Mode
A6
A5
CAS Latency
A4
A3
BT
A2
A1
A0
Burst Length
*Note:RFU (Reserved for future use)should stay 0 during MRS cycle.
¡D
¡D
Burst Length Field (A2~A0)
This field specifies the data length of column access using the A2~A0 pins and selects the Burst Length to be 2,
4,8,or full page.
A2
0
0
A1
0
0
A0
0
1
Burst Length
1
2
0
0
1
1
1
0
0
1
0
4
8
Reserved
1
1
1
0
1
1
1
0
1
Reserved
Reserved
Full Page
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
15
IS42S32160A
•
Burst Type Field (A3)
The Burst Type can be one of two modes,Interleave Mode or Sequential Mode.
A3
0
1
Burst Type
Sequential
Interleave
—Addressing Sequence of Sequential Mode
An internal column address is performed by increasing the address from the column address which is input to the
device.The internal column address is varied by the Burst Length as shown in the following table.When the value
of column address,(n +m),in the table is larger than 255,only the least significant 8 bits are effective.
Data n
0
1
2
3
4
5
6
7
-
255
256
257
-
Column Address
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
-
n+255
n
n+1
-
2 words:
Burst Length
4 words:
8 words:
Full Page: Column address is repeated until terminated.
•
Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address
bits in the sequence shown in the following table.
Data n
Column Address
Data 0
Data 1
A8
A8
Data 2
Data 3
A8
A8
Burst Length
A7
A7
A6
A6
A5
A5
A4
A4
A3
A3
A2
A2
A1
A1
A0
A0#
A7
A7
A6
A6
A5
A5
A5
A5
A4
A4
A3
A3
A2
A2
A1#
A1#
A0
A0#
A4
A4
A3
A3
A2#
A2#
A1
A1
A0
A0#
Data 4
Data 5
A8
A8
A7
A7
A6
A6
Data 6
Data 7
A8
A8
A7
A7
A6
A5
A4
A3
A2#
A1#
A0
A6
A5
A4
A3
A2#
A1#
A0#
4 words
8 words
•
CAS#Latency Field (A6~A4)
This field specifies the number of clock cycles from the assertion of the Read command to the first
read data.The minimum whole value of CAS#Latency depends on the frequency of CLK.The
minimum whole value satisfying the following formula must be programmed into this field.
tCAC(min)<=CAS#Latency X tCK
16
A6
0
0
A5
0
0
A4
0
1
CAS#Latency
Reserved
Reserved
0
0
1
1
1
X
0
1
X
2 clocks
3 clocks
Reserved
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
I
I
IS42S32160A
•
®
Test Mode field (A8~A7)
These two bits are used to enter the test mode and must be programmed to “00”in normal operation.
A8
0
A7
0
Test Mode
normal mode
0
1
1
X
Vendor Use Only
Vendor Use Only
•
Write Burst Length (A9)
This bit is used to select the burst write length.
A9
Write Burst Length
0
1
8
9
Burst
Single Bit
No-Operation command
(RAS#=”H”,CAS#=”H”,WE#=”H”)
The No-Operation command is used to perform a NOP to the SDRAM which is selected (CS#
is Low).This prevents unwanted commands from being registered during idle or wait states.
Burst Stop command
(RAS#=”H”,CAS#=”H”,WE#=”L”)
The Burst Stop command is used to terminate either fixed-length or full-page bursts.This
command is only effective in a read/write burst without the auto precharge function.The terminated
read burst ends after a delay equal to the CAS#latency (refer to the following figure).The
termination of a write burst is shown in the following figure.
T0
T1
T2
T3
NOP
NOP
T4
T5
T6
T7
T8
NOP
NOP
NOP
NOP
CLK
COMMAND
READ A
NOP
Burst Stop
The Burst ends after a delay equal to the CAS# latency.
CAS# latency=2
tCK2,DQ’s
DOUT A0
CAS# latency=3
tCK3,DQ’s
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
Termination of a Burst Read Operation (Burst Length > 4,CAS#Latency =2,3)
T0
T1
T2
T3
T4
NOP
NOP
Burst Stop
DIN A1
DIN A2
don’t care
T5
T6
T7
T8
NOP
NOP
NOP
NOP
CL K
COMMAN D
CAS# latency=2,3
DQ’s
NOP
WRITE A
DIN A0
Input Data for the Write is masked.
Termination of a Burst Write Operation (Burst Length =X)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
17
IS42S32160A
10
11
12
13
14
15
16
18
Device Deselect command (CS#=”H”)
The Device Deselect command disables the command decoder so that the RAS#,CAS#,WE# and Address inputs
are ignored,regardless of whether the CLK is enabled.This command is similar to the No Operation command.
AutoRefresh command
(RAS#=”L”,CAS#=”L”,WE#=”H”,CKE =”H”)
The AutoRefresh command is used during normal operation of the SDRAM and is analogous to CAS#-beforeRAS#(CBR)Refresh in conventional DRAMs.This command is non-persistent,so it must be issued each time a
refresh is required.The addressing is generated by the internal refresh controller.This makes the address bits a
“don ’t care”during an AutoRefresh command.The internal refresh counter increments automatically on every
auto refresh cycle to all of the rows.The refresh operation must be performed 4096 times within 64ms (32ms for
Industrial grade). The time required to complete the auto refresh operation is specified by tRC(min.).To provide the
AutoRefresh command, all banks need to be in the idle state and the device must not be in power down mode (CKE is
high in the previous cycle).This command must be followed by NOPs until the auto refresh operation is completed.The
precharge time requirement,tRP(min),must be met before successive auto refresh operations are performed.
SelfRefresh Entry command
(RAS#=”L”,CAS#=”L”,WE#=”H”,CKE =”L”)
The SelfRefresh is another refresh mode available in the SDRAM.It is the preferred refresh mode for data retention
and low power operation.Once the SelfRefresh command is registered,all the inputs to the SDRAM become “don
’t care”with the exception of CKE,which must remain LOW.The refresh addressing and timing is internally
generated to reduce power consumption.The SDRAM may remain in SelfRefresh mode for an indefinite period.
The SelfRefresh mode is exited by restarting the external clock and then asserting HIGH on CKE (SelfRefresh
Exit command).
SelfRefresh Exit command
(CKE =”H”,CS#=”H”or CKE =”H”,RAS#=”H”,CAS#=”H”,WE#=”H”)
This command is used to exit from the SelfRefresh mode.Once this command is registered, NOP or Device
Deselect commands must be issued for tRC(min.)because time is required for the completion of any bank
currently being internally refreshed.If auto refresh cycles in bursts are performed during normal operation,a burst
of 4096 auto refresh cycles should be completed just prior to entering and just after exiting the SelfRefresh mode.
Clock Suspend Mode Entry /PowerDown Mode Entry command (CKE =”L”)
When the SDRAM is operating the burst cycle,the internal CLK is suspended(masked)from the subsequent cycle
by issuing this command (asserting CKE “LOW”).The device operation is held intact while CLK is suspended.On
the other hand,when all banks are in the idle state,this command performs entry into the PowerDown mode.All
input and output buffers (except the CKE buffer)are turned off in the PowerDown mode.The device may not remain
in the Clock Suspend or PowerDown state longer than the refresh period (64ms)since the command does not
perform any refresh operations.
Clock Suspend Mode Exit /PowerDown Mode Exit command
When the internal CLK has been suspended,the operation of the internal CLK is einitiated from the subsequent
cycle by providing this command (asserting CKE “HIGH”).When the device is in the PowerDown mode,the device
exits this mode and all disabled buffers are turned on to the active state.tPDE(min.)is required when the device
exits from the PowerDown mode.Any subsequent commands can be issued after one clock cycle from the end
of this command.
Data Write /Output Enable,Data Mask /Output Disable command (DQM =”L”,”H”)
During a write cycle,the DQM signal functions as a Data Mask and can control every word of
the input data.During a read cycle,the DQM functions as the controller of output buffers.DQM is also used for
device selection,byte selection and bus control in a memory system.
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
I
I
®
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
VDD
VDDQ
Supply Voltage (with respect to VSS)
–0.5 to +4.6
Supply Voltage for Output (with respect to VSSQ)
–0.5 to +4.6
Input Voltage (with respect to VSS)
–0.5 to VDD+0.5
Output Voltage (with respect to VSSQ)
–1.0 to VDDQ+0.5
Short circuit output current
50
Power Dissipation (TA = 25 °C)
1
VI
VO
IO
PD
TOPT
TSTG
Operating Temperature
Rating
Com.
Ind.
Unit
0 to +70
-40 to +85
–55 to +150
Storage Temperature
V
V
V
V
mA
W
°C
°C
Notes:
1. Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant
to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute
Maximum Rating conditions for extended periods may affect device reliability.
DC RECOMMENDED OPERATING CONDITIONS
Symbol
VDD
VDDQ
VIH
VIL
Parameter
Min.
Typ.
Max.
Unit
Supply Voltage
Supply Voltage for DQ
High Level Input Voltage (all Inputs)
Low Level Input Voltage (all Inputs)
3.0
3.0
2.0
-0.3
3.3
3.3
—
—
3.6
3.6
VDD + 0.3
+0.8
V
V
V
V
Notes:
1. All voltages are referenced to VSS =0V
2. VIH(overshoot): VIH (max) = VDD + 2V (pulse width ≤ 3ns)
3. VIL(undershoot): VIL (min) = - 2V (pulse width ≤ 3ns)
CAPACITANCE CHARACTERISTICS
(At TA = 0 ~ 70°C, VDD = VDDQ = 3.3 ± 0.3V, VSS = VSSQ = 0V , unless otherwise noted)
Symbol
CIN
CCLK
CI/O
Parameter
Input Capacitance, address & control pin
Input Capacitance, CLK pin
Data Input/Output Capacitance
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
Min.
Max.
Unit
5
5
8
9
8
12
pF
pF
pF
19
IS42S32160A
D.C. Electrical Characteristics (Recommended Operating Conditions)
Description/Test condition
Operating Current
1 bank
tRC ≥ tRC(min), Outputs Open, Input
operation
signal one transition per one cycle
Precharge Standby Current in power down mode
tCK = 15ns, CKE ≤ VIL(max)
Precharge Standby Current in power down mode
tCK = ∞, CKE ≤ VIL(max)
Active Standby Current in power down mode
C KE ≤ VIL(max), tCK = 15ns
Active Standby Current in power down mode
CKE& CLK ≤ VIL(max), tCK = ∞
Active Standby Current in non-power down mode
CKE VIH(min), CS# ≥ VIH(min), tCK = 15ns
Active Standby Current in non-power down mode
CKE ≥ VIH(min), CLK ≤ VIL(max), tCK = ∞
Operating Current (Burst mode)
tCK =tCK(min), Outputs Open, Multi-bank interleave
Refresh Current
tRC ≥ tRC(min)
Self Refresh Current
C KE ≤ 0.2V
-75
Max.
ICC1
230
3
ICC2P
2.4
3
ICC2PS
2.4
ICC3P
2.4
ICC3PS
2.4
ICC3N
80
ICC3NS
80
ICC4
185
3, 4
ICC5
335
3
ICC6
1
Unit
3
4
Description
Min.
Max.
IIL
Input Leakage Current
(0V ≤ VIN ≤ VDD, All other pins not under test = 0V )
Output Leakage Current
(0V ≤ VOUT ≤ VDD, DQ disable )
LVTTL Output "H" Level Voltage
( IOUT = -2mA )
LVTTL Output "L" Level Voltage
( IOUT = 2mA )
-5
+5
VOH
VOL
+5
-5
Note
mA
Parameter
IOL
20
Symbol
2.4
Unit
Note
A
A
V
0.4
V
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
E
AC Electrical Characteristics (Recommended Operating Conditions)5,6,7,8
- 75
Symbol
tRC
A.C. Parameter
Min.
tCK2
Row cycle time
(same bank)
Row activate to row activate delay
(different banks)
RAS# to CAS# delay
(same bank)
Precharge to refresh/row activate command
(same bank)
Row activate to precharge time
(same bank)
Clock cycle time
CL* = 2
tCK3
CL* = 3
tRRD
tRCD
tRP
tRAS
Max.
Unit
Note
9
70
9
14
9
20
9
20
42
120,000
9
10
ns
7.5
tAC
Access time from CLK
(positive edge)
tOH
Data output hold time
2.5
tCH
Clock high time
2.75
10
tCL
Clock low time
2.75
10
tIS
Data/Address/Control Input set-up time
2
tIH
Data/Address/Control Input hold time
1
10
tLZ
Data output low impedance
1
9
tHZ
Data output high impedance
tWR
Write Recovery Time
2
tCCD
CAS# to CAS# Delay time
1
tMRS
Mode Register Set cycle time
2
9
6
9
9
10
6
8
8
CLK
* CL is CAS# Latency.
Note:
1. Stress greater than those listed under “Absolute Maximum Ratings”may cause permanent damage to the device.
2. All voltages are referenced to VSS.
3. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of
tCK and tRC.Input signals are changed one time during tCK.
4. These parameters depend on the output loading.Specified values are obtained with the output open.
5. Power-up sequence is described in Note 11.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
21
IS42S32160A
(Notes Continued)
6. A.C. Test Conditions
LVTTL Interface
Reference Level of Output Signals
Output Load
Input Signal Levels
Transition Time (Rise and Fall)of Input Signals
Reference Level of Input Signals
1.4V /1.4V
Reference to the Under Output Load
2.4V /0.4V
1ns
1.4V
1.4V
50Ω
Output
Z0=50Ω
30pF
LVTTL A.C. Test Load
7.
8.
9.
Transition times are measured between VIH and VIL.Transition(rise and fall)of input signals are in a fixed slope
(1 ns).
tHZ defines the time in which the outputs achieve the open circuit condition and are not at reference levels.
If clock rising time is longer than 1 ns,(tR /2 -0.5)ns should be added to the parameter.
10. Assumed input rise and fall time tT (tR &tF )=1 ns
If tR or tF is longer than 1 ns,transient time compensation should be considered,i.e.,[(tr +tf)/2 -1 ]ns
should be added to the parameter.
11. Power up Sequence
Power up must be performed in the following sequence.
1) Power must be applied to VDD and VDDQ(simultaneously)when all input signals are held “NOP”state
and both CKE =”H”and DQM =”H.”The CLK signals must be started at the same
time.
2) After power-up,a pause of 200µ seconds minimum is required.Then,it is recom
mended that DQM is held “HIGH”(VDD levels)to ensure DQ output is in high
impedance.
3) All banks must be precharged.
4) Mode Register Set command must be asserted to initialize the Mode register.
5) A minimum of 2 Auto-Refresh dummy cycles must be required to stabilize the internal circuitry of the device.
22
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
I
I
®
Timing Waveforms
Figure 1.AC Parameters for Write Timing (Burst Length=4,CAS#Latency=2)
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCL
tCH
tCK2
tIS
CKE
tIS
Begin Auto Precharge
Bank B
Begin Auto Precharge
Bank A
tIH
tIS
CS#
RAS#
CAS#
WE#
-5 ,
, -7 ,
x
x
BS0,1
tIH
tIS
ADDR.
CAx
RBx
RBx
CBx
RAy
RAz
CAy
RBy
DQM
tRCD
Hi-Z
DQ
tRC
Ax0 Ax1 Ax2
tDAL
Ax3 Bx0
tIS
Bx1
Bx2
Bx3
Activate
Write with
Activate Write with
Activate
Command Auto Precharge Command Auto Precharge Command
Bank A
Command
Bank B Command
Bank A
Bank A
Bank B
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
tWR tRP
tIH
Ay0
Write
Command
Bank A
Ay1
Ay2
tRRD
Ay3
Precharge Activate
Command Command
Bank A
Bank A
Activate
Command
Bank B
23
IS42S32160A
Figure 2.AC Parameters for Read Timing (Burst Length=2,CAS#Latency=2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CLK
tCK2
tCH tCL
CKE
Begin AutoPrecharge
Bank B
tIS
tIH
tIH
tIS
CS#
RAS#
CAS#
WE#
BS0,1
tIH
A10
RBx
RAx
RAy
tIS
ADD
RAx
CAx
CBx
RBx
tRRD
RAy
tRAS
tRC
DQM
tAC2
tLZ
tRCD
Hi-Z
DQ
tAC2
Ax0
tRP
tHZ
Ax1
Bx0
t HZ
t OH
Activate
Command
Bank A
24
Read
Command
Bank A
Activate
Command
Bank B
Bx1
Read with
Auto Precharge
Command
Bank B
Precharge
Command
Bank A
Activate
Command
Bank A
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
Figure 3.Auto Refresh (CBR)(Burst Length=4,CAS#Latency=2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE
CS#
RAS#
CAS#
WE#
BS0,1
A10
RAx
ADD
DQM
RAx
tRP
tRC
CAx
tRC
Ax0
DQ
Precharge All Auto Refresh
Command
Command
Auto Refresh
Command
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
Activate
Command
Bank A
Ax1
Ax2
Ax3
Read
Command
Bank A
25
IS42S32160A
Figure 4.Power on Sequene and Auto Refresh (CBR)
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
High level
is required
CKE
Minimum of 2 Refresh Cycles are required
tMRS
CS
RAS
CAS
WE
BS0, 1
A10
Address Key
ADD
DQM
DQ
High Level is Necessary
Hi-Z
tRP
Precharge
Inputs Command
All Banks
must
be stable
for 200us
26
tRC
1st Auto
Refresh
Command
2nd Auto
Refresh
Command
Mode Register
Set Command
Command
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
I
I
®
Figure 5.Self Refresh Entry &Exit Cycle
T0
T1
T2
CLK
T3
T4
T5
T6
T7
T8
T9
T10
T11
*Note 2
*Note 4
*Note 1
T13
tRC(min)
T14
T15
T16
T17
T18
T19
*Note 7
tPDE
*Note 3
CKE
tSRX
*Note 5
tIS
*Note 6
CS#
RAS#
T12
*Note 8
*Note 8
CAS#
BS0,1
ADD
WE#
DQM
DQ
Hi-Z
SelfRefresh Enter
Hi-Z
SelfRefresh Exit
Auto Refresh
Note:To Enter SelfRefresh Mode
1. CS#,RAS#&CAS#with CKE should be low at the same clock cycle.
2. After 1 clock cycle,all the inputs including the system clock can be don ’t care except for CKE.
3. The device remains in SelfRefresh mode as long as CKE stays “low”.
Once the device enters SelfRefresh mode,minimum tRAS is required before exit from SelfRefresh.
To Exit SelfRefresh Mode
1. System clock restart and be stable before returning CKE high.
2. Enable CKE and CKE should be set high for minimum time of tSRX.
3. CS#starts from high.
4. Minimum tRC is required after CKE going high to complete SelfRefresh exit.
5. 2048 cycles of burst AutoRefresh is required before SelfRefresh entry and after SelfRefresh exit if the system uses burst refresh.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
27
IS42S32160A
Figure 6.2.Clock Suspension During Burst Read (Using CKE)
(Burst Length=4,CAS#Latency=2)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
RAx
CAx
DQM
tHZ
DQ Hi-Z
Ax0
Activate
Command
Bank A
Read
Command
Bank A
Ax1
Clock Suspend
1 Cycle
Ax2
Ax3
Clock Suspend
2 Cycle
Clock Suspend
3 Cycle
Note:CKE to CLK disable/enable =1 clock
28
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
I
I
®
Figure 6.3.Clock Suspension During Burst Read (Using CKE)
(Burst Length=4,CAS#Latency=3)
T0
T 1 T 2 T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK3
CKE
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
RAx
CAx
DQM
tHZ
DQ Hi-Z
Ax0
Activate
Command
Bank A
Read
Command
Bank A
Ax1
Ax2
Clock Suspend Clock Suspend
1 Cycle
2 Cycle
Ax3
Clock Suspend
3 Cycle
Note:CKE to CLK disable/enable =1 clock
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
29
IS42S32160A
Figure 7.2.Clock Suspension During Burst Write (Using CKE)
(Burst Length=4,CAS#Latency=2)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE
CS#
RAS#
CAS#
WE#
BS0,1
A10
RAx
ADD
RAx
CAx
DQM
DQ
Hi-Z
DAx0
Activate
Command
Bank A
DAx1
DAx2
Clock Suspend Clock Suspend
1 Cycle
2 Cycle
DAx3
Clock Suspend
3 Cycle
Write
Command
Bank A
Note:CKE to CLK disable/enable =1 clock
30
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
I
I
®
Figure 7.3.Clock Suspension During Burst Write (Using CKE)
(Burst Length=4,CAS#Latency=3)
T0
T 1 T2
T3 T4
T5 T6
T7 T8
T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
tCK3
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
RAx
CAx
DQM
DQ Hi-Z
DAx0
Activate
Command
Bank A
DAx1
DAx2
Clock Suspend Clock Suspend
2 Cycle
1 Cycle
DAx3
Clock Suspend
3 Cycle
Write
Command
Bank A
Note:CKE to CLK disable/enable =1 clock
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
31
IS42S32160A
Figure 8.Power Down Mode and Clock Mask (Burst Lenght=4,
CAS#Latency=2)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
tPDE
t IS
CKE
Valid
CS#
RAS#
CAS#
WE#
BS0,1
RAx
A10
RAx
ADD
CAx
DQM
t HZ
Hi-Z
Ax0
DQ
ACTIVE
STANDBY
Activate
Read
Command
Command
Bank A
Bank A
Power Down
Power Down
Mode Entry
Mode Exit
32
Ax1
Clock Mask
Start
Ax2
Clock Mask
End
Ax3
Precharge
Command
Bank A
PRECHARGE
STANDBY
Power Down
Mode Exit
Any
Command
Power Down
Mode Entry
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
Figure 9.2.Random Column Read (Page within same Bank)
(Burst Length=4,CAS#Latency=2)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
RAz
RAw
ADD
RAw
CAw
CAx
RAz
CAy
CAz
DQM
DQ
Hi-Z
Aw0
Activate
Command
Bank A
Read
Command
Bank A
Aw1 Aw2
Aw3 Ax0
Read
Command
Bank A
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
Read
Command
Bank A
Ax1
Ay0
Ay1
Ay2
Ay3
Precharge Activate
Command Command
Bank A
Bank A
Az0
Az1
Az2
Az3
Read
Command
Bank A
33
IS42S32160A
Figure 9.3.Random Column Read (Page within same Bank)
(Burst Length=4,CAS#Latency=3)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK3
CKE
CS#
RAS#
CAS#
WE#
BS0,1
A10
RAz
RAw
ADD
RAw
CAw
CAx
RAz
CAy
CAz
DQM
DQ
Hi-Z
Aw0 Aw1 Aw2
Activate
Command
Bank A
34
Read
Command
Bank A
Read
Command
Bank A
Aw3
Read
Command
Bank A
Ax0
Ax1
Ay0
Ay1
Precharge
Command
Bank A
Ay2
Az0
Ay3
Activate
Command
Bank A
Read
Command
Bank A
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
Figure 10.2.Random Column Write (Page within same Bank)
(Burst Length=4,CAS#Latency=2)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE
CS#
RAS#
CAS#
WE#
BS0,1
RBw
A10
ADD
RBw
RBz
CBw
CBy
CBx
RBz
CBz
DQM
DQ
Hi-Z
Activate
Command
Bank A
Write
Command
Bank A
Write
Command
Bank B
Write
Command
Bank B
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
DBz0 DBz1 DBz2 DBz3
DBw0 DBw1 DBw2 DBw3 DBx0 DBx1 DBy0 DBy1 DBy2 DBy3
Precharge
Command
Bank B
Activate
Command
Bank B
Write
Command
Bank B
35
IS42S32160A
Figure 10.3.Random Column Write (Page within same Bank)
(Burst Length=4,CAS#Latency=3)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK3
CKE
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RBz
RBw
RBw
CBw
CBx
CBy
RBz
CBz
DQM
Hi-Z
DQ
Activate
Command
Bank A
36
DBz0 DBz1 DBz2
DBw0 DBw1 DBw2 DBw3 DBx0 DBx1 DBy0 DBy1 DBy2 DBy3
Write
Command
Bank A
Write
Command
Bank B
Write
Command
Bank B
Precharge
Command
Bank B
Activate
Command
Bank B
Write
Command
Bank B
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
Figure 11.3.Random Row Read (Interleaving Banks)
(Burst Length=8,CAS#Latency=3)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK3
CKE High
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RBx
RBy
RAx
RBx
RAx
CBx
tRCD
RBy
CAx
tAC3
tRP
DQM
DQ
Hi-Z
Activate
Command
Bank B
Bx0
Read
Command
Bank B
Bx1 Bx2
Activate
Command
Bank A
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
CBy
Bx3
Bx4
Bx5
Read
Command
Bank A
Bx6
Bx7
Precharge
Command
Bank B
Ax0
Ax1
Ax2
Activate
Command
Bank B
Ax3
Ax4
Ax5
Read
Command
Bank B
Ax6
Ax7
By0
Precharge
Command
Bank A
37
IS42S32160A
Figure 12.2.Random Row Write (Interleaving Banks)
(Burst Length=8,CAS#Latency=2)
T0 T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE
High
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
CAx
RBx
tRCD
Hi-Z
Activate
Command
Bank A
RAy
CBx
tWR*
DQM
DQ
RAy
RBx
RAx
t RP
CAy
tWR*
DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3 DAy4
Write
Command
Bank A
Activate
Command
Bank B
Write
Command
Bank B
Precharge
Command
Bank A
Activate
Command
Bank A
Write
Command
Bank A
Precharge
Command
Bank B
* tWR > tWR(min.)
38
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
Figure 12.3.Random Row Write (Interleaving Banks)
(Burst Length=8,CAS#Latency=3)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK3
CKE High
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RBx
RAx
RAx
CAx
RBx
tRCD
RAy
RAy
CBx
tWR*
tRP
tWR*
DQM
DQ
Hi-Z
Activate
Command
Bank A
CAy
DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3
Write
Command
Bank A
Activate
Command
Bank B
Write
Command
Bank B
Precharge
Command
Bank A
Activate
Command
Bank A
Write
Command
Bank A
Precharge
Command
Bank B
* tWR > tWR(min.)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
39
IS42S32160A
Figure 13.2.Read and Write Cycle (Burst Length=4,CAS#Latency=2)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE
CS#
RAS#
CAS#
WE#
BS0,1
A10
RAx
ADD
RAx
CAx
CAz
CAy
DQM
DQ
Hi-Z
Ax0
Activate
Command
Bank A
40
Read
Command
Bank A
Ax1
Ax2
Ax3
DAy0 DAy1
Write
Command
Bank A
DAy3
The Write Data
is Masked with a
Zero Clock
Latency
Az0
Read
Command
Bank A
Az1
Az3
The Read Data
is Masked with a
Two Clock
Latency
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
Figure 13.3.Read and Write Cycle (Burst Length=4,CAS#Latency=3)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK3
CKE
CS#
RAS#
CAS#
WE#
BS0,1
A10
RAx
ADD
RAx
CAy
CAx
CAz
DQM
DQ
Hi-Z
Ax0
Activate
Command
Bank A
Ax1 Ax2
Read
Command
Bank A
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
Ax3
DAy0 DAy1
DAy3
Write
The Write Data
Command is Masked with a
Bank A
Zero Clock
Latency
Az0
Read
Command
Bank A
Az1
Az3
The Read Data
is Masked with a
Two Clock
Latency
41
IS42S32160A
Figure 14.2.Interleaving Column Read Cycle (Burst Length=4,CAS#Latency=2)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE
CS#
RAS#
CAS#
WE#
BS0,1
RAx
A10
ADD
CAy
RAx
tRCD
DQM
DQ
RAx
Hi-Z
Read
Command
Bank A
CBw
CBx
CBy
Bw0 Bw1
Bx0
CAy
CBz
tAC2
Ax0
Activate
Command
Bank A
42
RAx
Activate
Command
Bank B
Ax1
Ax2
Read
Command
Bank B
Ax3
Read
Command
Bank B
Read
Command
Bank B
Bx1
By0
Read
Command
Bank A
By1
Ay0
Ay1
Bz0 Bz1
Read
Command
Bank B
Precharge
Command
Bank A
Bz2
Bz3
Precharge
Command
Bank B
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
Figure 14.3.Interleaved Column Read Cycle (Burst Length=4,CAS#Latency=3)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK3
CKE
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
RBx
RAx
CAx
tRCD
DQM
RBx
CBx
Ax0
Read
Command
Bank A
Activate
Command
Bank B
Ax1
Read
Command
Bank B
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
CAy
tAC3
DQ Hi-Z
Activate
Command
Bank A
CBz
CBy
Ax2
Ax3
Read
Command
Bank B
Bx0
Bx1
Read
Command
Bank B
By0
By1
Read
Command
Bank A
Bz0
Bz1
Ay0
Precharge
Command
Bank B
Ay1
Ay2 Ay3
Precharge
Command
Bank A
43
IS42S32160A
Figure 15.2.Interleaved Column Write Cycle (Burst Length=4,CAS#Latency=2)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE
CS#
RAS#
CAS#
WE#
BS0,1
RAx
A10
RBw
RAx
ADD
CAx
RBw
CBw
CBx
CBy
CAy
tRCD
CBz
tRP
t WR
tRP
DQM
tRRD
DQ
Hi-Z
DAx0 DAx1 DAx2 DAx3 DBw0 DBw1 DBx0 DBx1 DBy0 DBy1 DAy0 DAy1 DBz0 DBz1 DBz2 DBz3
Activate
Command
Bank A
44
Write
Command
Bank A
Activate
Command
Bank B
Write
Command
Bank B
Write
Command
Bank B
Write
Command
Bank B
Write
Command
Bank A
Write
Command
Bank B
Precharge
Command
Bank A
Precharge
Command
Bank B
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
Figure 15.3.Interleaved Column Write Cycle (Burst Length=4,CAS#Latency=3)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK3
CKE
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
RBw
RAx
CAx RBw
CBw
CBx
CBy
CAy
tRCD
DQM
CBz
tWR
tRP
tWR(min)
tRRD > tRRD(min)
DQ
Hi-Z
DAx0 DAx1 DAx2 DAx3 DBw0 DBw1 DBx0 DBx1 DBy0 DBy1 DAy0 DAy1 DBz0 DBz1 DBz2 DBz3
Activate
Command
Bank A
Activate
Command
Bank B
Write
Command
Bank B
Write
Command
Bank A
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
Write
Command
Bank B
Write
Command
Bank B
Write
Command
Bank A
Write
Command
Bank B
Precharge
Command
Bank A
Precharge
Command
Bank B
45
IS42S32160A
Figure 16.2.Auto Precharge after Read Burst (Burst Length=4,CAS#Latency=2)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE High
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
RAx
RBx
CAx
RAz
RBy
RBx
CBx
Ax0
Ax1 Ax2
RAy
RBy
Bx1 Bx2
Bx3 Ay0
CBy
RAz
Ay2
Ay3 By0
CAz
DQM
DQ
Hi-Z
Activate
Command
Bank A
46
Read
Command
Bank A
Activate
Command
Bank B
Ax3
Read with
Auto Precharge
Command
Bank B
Bx0
Ay1
By1
By2
By3
Az0
Az1
Az2
Activate
Activate
Read with
Read with
Read with
Auto Precharge Command Auto Precharge Command Auto Precharge
Bank B
Bank
A
Command
Command
Command
Bank B
Bank A
Bank A
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
Figure 16.3.Auto Precharge after Read Burst (Burst Length=4,CAS#Latency=3)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK3
CKE High
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
RAx
RBx
CAx
RBy
CBx
RBx
CAy
CBy
RBy
DQM
DQ
Hi-Z
Activate
Command
Bank A
Ax0
Activate
Command
Bank B
Read
Command
Bank A
Ax1
Ax2
Read with
Auto Precharge
Command
Bank B
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
Ax3
Bx0
Bx1
Bx2
Bx3 Ay0
Activate
Command
Bank B
Read with
Auto Precharge
Command
Bank A
Ay1
Ay2
Ay3
By0
By1
By2
By3
Read with
Auto Precharge
Command
Bank B
47
IS42S32160A
Figure 17.2.Auto Precharge after Write Burst (Burst Length=4,CAS#Latency=2)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE High
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
RAx
RBx
CAx
RBx
RAz
RBy
CBx
CAy
RBy
CBy
RAz
CAz
DQM
DQ
Hi-Z
Activate
Command
Bank A
DAx0 DAx1 DAx2 DAx3 DBx0 DBx1 DBx2 DBx3 DAy0 DAy1 DAy2 DAy3
Write
Command
Bank A
Write with
Activate
Command Auto Precharge
Bank B
Command
Bank B
48
Write with
Auto Precharge
Command
Bank A
DBy0 DBy1 DBy2 DBy3 DAz0 DAz1 DAz2 DAz3
Write with
Write with
Activate
Activate
Command Auto Precharge Command Auto Precharge
Bank B
Bank
A
Command
Command
Bank B
Bank A
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
Figure 17.3.Auto Precharge after Write Burst (Burst Length=4,CAS#Latency=3)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK3
CKE High
CS#
RAS#
CAS#
WE#
‘
BS0,1
A9
ADD
RBx
RAx
RAx
RBx
CAx
RBy
CBx
CAy
RBy
CBy
DQM
DQ
Hi-Z
Activate
Command
Bank A
DAx0 DAx1 DAx2 DAx3 DBx0 DBx1 DBx2 DBx3 DAy0 DAy1 DAy2 DAy3
Activate
Command
Bank B
Write
Command
Bank A
Write with
Auto Precharge
Command
Bank B
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
Write with
Auto Precharge
Command
Bank A
Activate
Command
Bank B
DBy0 DBy1 DBy2 DBy3
Write with
Auto Precharge
Command
Bank B
49
IS42S32160A
Figure 18.2.Full Page Read Cycle (Burst Length=Full Page,CAS#Latency=2)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE
High
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
RBy
RBx
RAx
CAx
CBx
RBx
RBy
tRP
DQM
DQ
Hi-Z
Ax Ax+1 Ax+2 Ax-2 Ax-1
Activate
Command
Bank A
Read
Command
Bank A
Activate
Command
Bank B
Ax+1 Bx
Bx+1
B
x+2 Bx+3 Bx+4 Bx+5 Bx+6
Read
Command Full Page burst operation does not
Bank B term in ate when the burst length is sat is fied;
the burst counter increments and continues
The burst counter wraps
bursting beginning with the starting address.
from the highest order
page address back to zero
during this time interval
50
Ax
Precharge
Command
Bank B
Activate
Command
Bank B
Burst Stop
Command
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
Figure 18.3.Full Page Read Cycle (Burst Length=Full Page,CAS#Latency=3)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK3
CKE
High
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RBx
RAx
RAx
CAx
RBy
CBx
RBx
RBy
tRP
DQM
DQ
Hi-Z
Activate
Command
Bank A
Ax
Read
Command
Bank A
Activate
Command
Bank B
Ax+1 Ax+2 Ax-2 Ax-1
Ax+1
Bx
Bx+1 Bx+2 Bx+3 Bx+4 Bx+5
Read
Command Full Page burst operation does not
Bank B terminate when the burst length is
satisfied; the burst counter
The burst counter wraps
increments and continues
from the highest order
page address back to zero bursting beginning with the
starting address.
during this time interval
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
Ax
Precharge
Command
Bank B
Activate
Command
Bank B
Burst Stop
Command
51
IS42S32160A
Figure 19.2.Full Page Write Cycle (Burst Length=Full Page,CAS#Latency=2)
T0
T 1 T2
T3
T4
T5
T6 T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t CK2
CKE
High
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
RAx
RBy
RBx
CAx
CBx
RBx
RBy
DQM
DQ
Hi-Z
Activate
Command
Bank A
DAx
DAx+1 DAx+2 DAx+3 DAx-1
Write
Command
Bank A
DAx
Activate
Command
Bank B
The burst counter wraps
from the highest order
page address back to zero
during this time interval
52
DAx+1 DBx
DBx+1 DBx+2 DBx+3 DBx+4 DBx+55DBx+6
Write
Command
Bank B
Full Page burst operation does
not terminate when the burst
length is satisfied; the burst counter
increments and continues bursting
beginning with the starting address.
Data is ignored
Precharge
Command
Bank B
Activate
Command
Bank B
Burst Stop
Command
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
Figure 19.3.Full Page Write Cycle (Burst Length=Full Page,CAS#Latency=3)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK3
CKE High
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
RAx
RBy
RBx
CAx
RBx
RBy
CBx
DQM
Data is ignored
DQ
Hi-Z
Activate
Command
Bank A
DAx
DAx+1 DAx+2 DAx+3 DAx-1 DAx
Write
Command
Bank A
DAx+1 DBx
Activate
Command
Bank B
The burst counter wraps
from the highest order
page address back to zero
during this time interval
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
DBx+1
DBx+3 DBx+4 DBx+5
Write
Command
Bank B
Full Page burst operation does
not terminate when the burst
length is satisfied; the burst counter
increments and continues bursting
beginning with the starting address.
Precharge
Command
Bank B
Activate
Command
Bank B
Burst Stop
Command
53
IS42S32160A
Figure 20.Byte Write Operation (Burst Length=4,CAS#Latency=2)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE High
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
RAx
CAy
CAx
CAz
DQM0
DQM1,2,3
DQ0 - DQ7
Ax0
DQ8 - DQ15
Activate
Command
Bank A
54
Ax1
Ax2
Ax1
Ax2
Read Upper 3 Bytes
Command are masked
Bank A
DAy1 DAy2
Ax3
Lower Byte
is masked
DAy0 DAy1
DAy3
Write Upper 3 Bytes
Command
are masked
Bank A
Read
Command
Bank A
Az1
Az2
Az1
Az2
Lower Byte
is masked
Az3
Lower Byte
is masked
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
Figure 22.Full Page Random Column Read (Burst Length=Full Page,CAS#Latency=2)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
RBx
RAx
RBx CAx
RBw
CBx
CAy
CBy
CAz
CBz
RBw
t RP
DQM
t RRD
tRCD
DQ
Ax0
Activate
Command
Bank A
Activate
Command
Bank B
Read
Command
Bank B
Read
Command
Bank A
Read
Bx0
Ay0
Read
Command
Bank B
Command
Bank A
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
Ay1 By0
Read
Command
Bank A
By1
Az0
Az1
Read
Command
Bank B
Az2
Bz0
Bz1
Bz2
Precharge
Command Bank B
(Precharge Temination)
Activate
Command
Bank B
55
IS42S32160A
Figure 23.Full Page Random Column Write (Burst Length=Full Page,CAS#Latency=2)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
RBx
RAx
RBx
RBw
CAx
CBx
CAy
CBy
CAz
CBz
RBw
t WR
t RP
DQM
tRRD
t RCD
DQ
DAx0 DBx0 DAy0 DAy1 DBy0 DBy1 DAz0 DAz1 DAz2 DBz0 DBz1 DBz2
Activate
Command
Bank A
56
Write
Command
Bank B
Write
Write
Command
Command
Bank A
Bank A
Activate
Command
Bank B
Write
Command
Bank B
Write
Command
Bank A
Write
Command
Bank B
Precharge
Command Bank B
(Precharge Temination)
Write Data
is masked
Activate
Command
Bank B
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
Figure 24.2.Precharge Termination of a Burst
(Burst Length=8 or Full Page,CAS#Latency=2)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
CKE High
CS#
RAS#
CAS#
WE#
BS0,1
A10
ADD
RAx
RAx
RAz
RAy
CAx
RAy
CAy
RAz
tWR tRP
CAz
tRP
tRP
DQM
DQ
Ay0
DAx0 DAx1 DAx2 DAx3
Activate
Command
Bank A
Write
Command
Bank A
Precharge
Command
Bank A
Activate
Command
Bank A
Precharge Termination
of a Write Burst.
Write data is masked.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
Read
Command
Bank A
Ay1
Precharge
Command
Bank A
Ay2
Activate
Command
Bank A
Az0
Read
Command
Bank A
Az1
Az2
Precharge
Command
Bank A
Precharge Termination
of a Read Burst.
57
IS42S32160A
Figure 24.3.Precharge Termination of a Burst
(Burst Length=4,8 or Full Page,CAS#Latency=3)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK3
CKE High
CS#
RAS#
CAS#
WE#
BS0,1
RAx
ADD
RAx
RAz
RAy
A10
RAy
CAx
t WR
RAz
CAy
t RP
tRP
DQM
DQ
Activate
Command
Bank A
Write
Command
Bank A
Write Data
is masked
58
Ay0
DAx0 DAx1
Precharge
Command
Bank A
Activate
Command
Bank A
Read
Command
Bank A
Precharge
Command
Bank A
Ay1
Ay2
Activate
Command
Bank A
Precharge Termination
of a Read Burst
Precharge Termination
of a Write Burst
Integrated Silicon Solution, Inc.
Rev. 00E
07/21/09
IS42S32160A
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Frequency
Speed (ns)
Order Part No.
Package
133 MHz
7.5
IS42S32160A-75B
8 x13mm BGA
133 MHz
7.5
IS42S32160A-75BL
8 x13mm BGA, Lead-free
Order Part No.
Package
Industrial Range: -40°C to +85°C
Frequency
Speed (ns)
133 MHz
7.5
IS42S32160A-75BI
8 x13mm BGA
133 MHz
7.5
IS42S32160A-75BLI
8 x13mm BGA, Lead-free
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00E
07/21/09
59
D1
0.80
Package Outline
0.45
NOTE :
1. CONTROLLING DIMENSION : MM .
2. Reference document : JEDEC MO-207
08/14/2008