APT77N60JC3
0.035Ω
600V 77A
Super Junction MOSFET
S
S
COOLMOS
27
2
T-
D
G
SO
Power Semiconductors
• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Popular SOT-227 Package
• N-Channel Enhancement Mode
"UL Recongnized"
file # 145592
ISOTOP fi
D
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
G
S
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VDSS
ID
Parameter
APT77N60JC3
UNIT
600
Volts
Drain-Source Voltage
77
Continuous Drain Current @ TC = 25°C
Amps
231
1
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
Gate-Source Voltage Transient
±30
Total Power Dissipation @ TC = 25°C
568
Watts
Linear Derating Factor
4.55
W/°C
VGSM
PD
TJ,TSTG
TL
dv
/dt
Volts
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 77A, TJ = 125°C)
50
V/ns
Amps
IAR
Repetitive Avalanche Current
7
20
EAR
Repetitive Avalanche Energy
7
1
EAS
Single Pulse Avalanche Energy
mJ
1800
4
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 60A)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
TYP
.030
0.035
1.0
50
500
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
2.1
UNIT
Volts
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TJ = 150°C)
Gate Threshold Voltage (VDS = VGS, ID = 5.4mA)
MAX
3
Ohms
μA
±200
nA
3.9
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
050-7146 Rev G 11-2009
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT77N60JC3
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
4400
Crss
Reverse Transfer Capacitance
f = 1 MHz
290
Qg
Total Gate Charge
3
VGS = 10V
505
Qgs
Gate-Source Charge
VDD = 300V
48
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
td(off)
ID = 77A @ 25°C
tf
ID = 77A @ 125°C
110
165
8
12
RG = 0.9Ω
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
nC
27
VDD = 380V
Eon
640
18
VGS = 10V
Fall Time
pF
240
RESISTIVE SWITCHING
Turn-off Delay Time
UNIT
13600
VGS = 0V
Rise Time
MAX
6
INDUCTIVE SWITCHING @ 25°C
ID = 77A, RG = 5Ω
2880
6
INDUCTIVE SWITCHING @ 125°C
2300
ns
1670
VDD = 400V, VGS = 15V
VDD = 400V, VGS = 15V
ID = 77A, RG = 5Ω
μJ
3100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
MIN
231
Pulsed Source Current
1
(Body Diode)
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = - 77A)
1
t rr
Reverse Recovery Time (IS = -77A, dl S/dt = 100A/μs, VR = 350V)
Q rr
Reverse Recovery Charge (IS = -77A, dl S/dt = 100A/μs, VR = 350V)
/dt
Peak Diode Recovery
dv
/dt
MAX
77
Continuous Source Current (Body Diode)
ISM
dv
TYP
1.2
861
UNIT
Amps
Volts
ns
μC
46
5
6
V/ns
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.22
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.7
0.5
Note:
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7146 Rev G 11-2009
0.9
0.15
0.3
0.05
SINGLE PULSE
0.1
0.05
10-5
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0
10-4
°C/W
4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID77A di/dt ≤ 700A/μs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.25
0.20
UNIT
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance
APT77N60JC3
200
VGS =15 &10V
TC ( C)
0.00999
0.0212
0.0724
0.116
Dissipated Power
(Watts)
0.00421
0.00198
0.0129
0.314
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
ZEXT
TJ ( C)
ID, DRAIN CURRENT (AMPERES)
180
160
140
120
100
80
TJ = +25°C
60
40
TJ = +125°C
20
0
0
1
2
3
4
5
6
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
120
100
80
60
0
5
10
15
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
30
20
10
0
25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
40
1.40
NORMALIZED TO
V
GS
1.30
= 10V @ 47A
1.20
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
20 40 60 80 100 120 140 160 180
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
3
I = 47A
D
2.5
V
GS
= 10V
2.0
1.5
1.0
0.5
0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
50
4V
20
1.15
60
4.5V
40
80
70
5V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7146 Rev G 11-2009
ID, DRAIN CURRENT (AMPERES)
180
TJ = -55°C
5.5V
140
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
160
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
200
6V & 6.5V
Typical Performance
DC line
10
100μs
10μs
1ms
10ms
100ms
1
C, CAPACITANCE (pF)
100
Coss
1,000
100
Crss
10
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I = 77A
D
12
VDS= 120V
VDS= 300V
8
VDS= 480V
4
0
0
100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
Ciss
10,000
0.1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
APT77N60JC3
60,000
1000
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
250
600
V
DD
td(off)
500
400
V
DD
R
G
G
= 400V
= 5Ω
T = 125°C
J
L = 100μH
tf
= 400V
= 5Ω
T = 125°C
J
L = 100μH
300
200
tr and tf (ns)
td(on) and td(off) (ns)
R
200
150
100
tr
50
100
td(on)
0
10
30
0
10
50
70
90
110 130 150
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
70
90
110 130 150
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
8000
V
DD
7000
R
G
V
DD
14000
L = 100μH
EON includes
diode reverse recovery.
Eoff
4000
3000
Eon
2000
= 400V
I = 77A
D
T = 125°C
J
L = 100μH
12000
Eoff
EON includes
diode reverse recovery.
10000
8000
6000
4000
Eon
2000
1000
0
10
SWITCHING ENERGY (mJ)
SWITCHING ENERGY (mJ)
050-7146 Rev G 11-2009
J
5000
50
16000
= 400V
= 5Ω
T = 125°C
6000
30
30
50
70
90
110 130 150
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT77N60JC3
Gate Voltage
T
10%
90%
Gate Voltage
TJ = 125 C
TJ = 125 C
td(on)
td(off)
tr
Collector Current
Collector Current
tf
90%
90%
5%
5%
10%
Collector Voltage
0
10%
Collector Voltage
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7146 Rev G 11-2009
7.8 (.307)
8.2 (.322)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)