APT6010JLL 600V 47A 0.100Ω POWER MOS 7 R MOSFET ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with MIcrosemi's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID 27 2 T- D G SO "UL Recongnized" file # 145592 ISOTOP fi D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS Symbol S S G S All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT6010JLL UNIT 600 Volts 47 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 520 Watts Linear Derating Factor 4.16 W/°C PD TJ,TSTG 1 188 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 47 (Repetitive and Non-Repetitive) 1 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 23.5A) TYP MAX Volts 0.100 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com UNIT 6-2006 Characteristic / Test Conditions 050-7052 Rev E Symbol DYNAMIC CHARACTERISTICS Symbol APT6010JLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 1250 Reverse Transfer Capacitance f = 1 MHz 90 VGS = 10V 150 VDD = 300V 30 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr ID = 47A @ 25°C tf 17 VDD = 300V RG = 0.6Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 10 INDUCTIVE SWITCHING @ 25°C 6 770 VDD = 400V, VGS = 15V 6 ns 34 ID = 47A @ 25°C Fall Time nC 12 VGS = 15V Turn-off Delay Time pF 75 RESISTIVE SWITCHING Rise Time td(off) UNIT 6710 VGS = 0V 3 MAX ID = 47A, RG = 5Ω 845 INDUCTIVE SWITCHING @ 125°C 1000 VDD = 400V VGS = 15V ID = 47A, RG = 5Ω µJ 1060 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 47 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -47A, dl S /dt = 100A/µs) 790 ns Q rr Reverse Recovery Charge (IS = -47A, dl S/dt = 100A/µs) 17.9 µC dv/ Peak Diode Recovery dt dv/ 188 (Body Diode) 1.3 (VGS = 0V, IS = - 47A) dt 5 Amps Volts 8 V/ns MAX UNIT 0.24 °C/W THERMAL CHARACTERISTICS Symbol RθJC VIsolation Characteristic MIN TYP Junction to Case RMS Volatage (50-60hHZ Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 2500 Volts 4 Starting Tj = +25°C, L = 2.72mH, RG = 25Ω, Peak IL = 47A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID47A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. Microsemi reserves the right to change, without notice, the specifications and inforation contained herein. D = 0.9 0.20 0.7 0.15 0.5 Note: 0.10 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7052 Rev E 6-2006 0.25 0.3 t2 0.05 0.1 0 t1 SINGLE PULSE 0.05 10-5 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 0.123 0.0203 0.173 0.490 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 120 100 80 60 40 TJ = +125°C TJ = +25°C 20 0 TJ = -55°C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 80 7V 60 6.5V 40 6V 20 5.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V 40 30 20 10 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 1.20 1.10 VGS=10V 1.00 VGS=20V 0.90 0.80 0 D 20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 23.5A GS = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) I V NORMALIZED TO = 10V @ 23.5A GS 1.30 1.15 0 25 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 7.5V 100 0 50 0.0 -50 8V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 6-2006 140 VGS=15 &10V 120 050-7052 Rev E ID, DRAIN CURRENT (AMPERES) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160 ID, DRAIN CURRENT (AMPERES) 0.0651 Dissipated Power (Watts) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE TC ( C) ZEXT TJ ( C) 0.0528 APT6010JLL 140 OPERATION HERE LIMITED BY RDS (ON) 100µS 10 1mS 1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 I D = 47A VDS=120V VDS=300V 12 VDS=480V 8 4 0 0 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 120 1,000 Coss 100 Crss 10 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 TJ =+150°C TJ =+25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 140 V td(off) 100 Ciss 10mS TC =+25°C TJ =+150°C SINGLE PULSE 1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10,000 C, CAPACITANCE (pF) 100 APT6010JLL 20,000 IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 190 G 120 = 400V DD R = 5Ω T = 125°C J V DD R G = 400V = 5Ω tr and tf (ns) 80 T = 125°C 60 J L = 100µH 40 10 20 V DD G 30 40 50 60 70 80 90 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 4000 = 400V I Eoff diode reverse recovery 1500 1000 Eon 500 20 DD D 30 40 = 400V = 47A T = 125°C J L = 100µH 10 20 V = 5Ω E ON includes Eon and Eoff (µJ) 10 T = 125°C 2000 6-2006 0 50 60 70 80 90 ID (A) FIGURE 14, DELAY TIMES vs CURRENT R 050-7052 Rev E tr 20 2500 0 tf 60 td(on) 20 0 80 40 30 40 50 60 70 80 90 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT Eoff J SWITCHING ENERGY (µJ) td(on) and td(off) (ns) L = 100µH 100 3000 L = 100µH E ON includes diode reverse recovery 2000 Eon 1000 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT6010JLL 90% Gate Voltage 10% TJ125°C Gate Voltage T 125°C J td(off) td(on) Drain Current tr tf 5% 10% Drain Voltage 90% 90% 5% Drain Voltage Switching Energy 10% 0 Drain Current Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT30DF60 V DD ID V DS G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP® is a registered trademark of ST Microelectronics NV.Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 6-2006 r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7052 Rev E 7.8 (.307) 8.2 (.322)