600V 40A 0.110Ω
APT40N60B2CF
APT40N60LCF
APT40N60B2CFG* APT40N60LCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Super Junction FREDFET
COOLMOS
Power Semiconductors
T-MaxTM
• Ultra Low RDS(ON)
• Intrinsic Fast-Recovery Body Diode
• Low Miller Capacitance
• Extreme Low Reverse Recovery Charge
• Ultra Low Gate Charge, Qg
• Ideal For ZVS Applications
• Avalanche Energy Rated
• Popular T-MAX™ or TO-264 Package
TO-264
• Extreme dv/dt Rated
D
Unless stated otherwise, Microsemi discrete FREDFETs contain a single FREDFET die. This device is made with two
G
parallel FREDFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
MAXIMUM RATINGS
Symbol
VDSS
ID
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT40N60B2CF(G)_LCF(G)
UNIT
Drain-Source Voltage
600
Volts
Continuous Drain Current @ TC = 25°C
40
Continuous Drain Current @ TC = 100°C
26
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Volts
Total Power Dissipation @ TC = 25°C
417
Watts
Linear Derating Factor
3.33
W/°C
PD
TJ,TSTG
TL
dv/
dt
IAR
80
Operating and Storage Junction Temperature Range
-55 to 150
°C
Lead Temperature: 0.063" from Case for 10 Sec.
260
Drain-Source Voltage slope (VDS = 480V, ID = 40A, TJ = 125°C)
80
V/ns
20
Amps
Avalanche Current
7
7
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
4
mJ
690
STATIC ELECTRICAL CHARACTERISTICS
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA)
Drain-Source On-State Resistance
2
TYP
MAX
UNIT
Volts
600
(VGS = 10V, ID = 20A)
0.110
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
4.2
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
3400
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2mA)
3
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
6-2006
BVDSS
Characteristic / Test Conditions
050-7236 Rev B
Symbol
APT40N60B2CF(G)_LCF(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
3
VGS = 10V
Gate-Source Charge
VDD = 300V
Total Gate Charge
Qgs
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
ID = 40A @ 25°C
RG = 1.8Ω
6.4
6
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
Eon
Turn-on Switching Energy
725
Eoff
Turn-off Switching Energy
ID = 40A, RG = 5Ω
365
6
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
Eon
Turn-on Switching Energy
1195
Eoff
Turn-off Switching Energy
ID = 40A, RG = 5Ω
440
UNIT
pF
80
185
36
115
12
15
60
VDD = 380V
Fall Time
MAX
5040
1365
RESISTIVE SWITCHING
Turn-off Delay Time
tf
TYP
ID = 40A @ 25°C
Rise Time
td(off)
MIN
Test Conditions
Ciss
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
MIN
TYP
Pulsed Source Current
VSD
1
Diode Forward Voltage
Peak Diode Recovery
/dt
dv
/dt
(VGS = 0V, IS = -40A)
5
Reverse Recovery Time
t rr
Q rr
(IS = -40A, di/dt = 100A/µs)
Tj = 25°C
195
Tj = 125°C
290
Reverse Recovery Charge
Tj = 25°C
1.8
(IS = -40A, /dt = 100A/µs)
Tj = 125°C
3.5
Peak Recovery Current
Tj = 25°C
17
22
di
IRRM
80
(Body Diode)
2
di
(IS = -40A, /dt = 100A/µs)
MAX
40
Continuous Source Current (Body Diode)
ISM
dv
Characteristic / Test Conditions
Tj = 125°C
UNIT
Amps
2.4
Volts
40
V/ns
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
0.30
31
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.7
0.5
0.15
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
6-2006
050-7236 Rev B
0.9
0.25
0.20
0.3
0.10
t1
t2
0.05
0
0.1
0.05
10-5
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 13.80mH, RG = 25Ω, Peak IL = 10A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID40A di/dt ≤ 700A/µs VR ≤ 480V TJ ≤125°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
UNIT
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
0.0988
0.158
0.00308
0.00145
0.00948
0.231
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
80
60
TJ = -55°C
40
TJ = +25°C
20
0
TJ = +125°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
35
30
25
20
15
10
5
0
25
3.0
7V
30
6.5V
20
10
6V
5.5V
0
5
10
15
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
NORMALIZED TO
VGS = 10V @ 20A
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
1.15
0
10 20 30 40 50
60 70 80
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
I = 20A
D
V
2.5
GS
= 10V
2.0
1.5
1.0
0.5
0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
6-2006
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
40
050-7236 Rev B
ID, DRAIN CURRENT (AMPERES)
40
7.5V
50
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
100
60
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
8V
70
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
VDS> ID(ON) x RDS(ON) MAX.
VGS = 15 &10 V
80
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
90
ID, DRAIN CURRENT (AMPERES)
0.0289
Dissipated Power
(Watts)
ZEXT
TC (°C)
TJ (°C)
0.0136
APT40N60B2CF(G)_LCF(G)
100
APT40N60B2CF(G)_LCF(G)
30,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
10,000
Graph removed
Ciss
1,000
Coss
100
Crss
10
16
I = 40A
D
12
VDS=120V
VDS=300V
8
VDS=480V
4
0
300
250
200
150
100
50
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
180
0
50
40
30
20
10
0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
120
V
DD
R
100
= 400V
tr and tf (ns)
td(on) and td(off) (ns)
10
R
= 5Ω
G
T = 125°C
J
L = 100µH
80
60
= 400V
= 5Ω
50
tf
40
tr
30
20
td(on)
10
0
40
30
ID (A)
20
10
50
60
0
70
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
J
on
includes
diode reverse recovery.
1500
Eon
1000
500
50
40
30
ID (A)
60
70
2000
Eon
1500
Eoff
1000
V
DD
70
60
50
40
30
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
10
20
= 400V
I = 40A
D
T = 125°C
J
L = 100µH
500
Eoff
0
20
FIGURE 15, RISE AND FALL TIMES vs CURRENT
= 400V
L = 100µH
E
10
= 5Ω
T = 125°C
2000
0
2500
SWITCHING ENERGY (mJ)
2500
0
G
T = 125°C
J
L = 100µH
60
20
SWITCHING ENERGY (mJ)
TJ =+25°C
70
td(off)
40
6-2006
TJ =+150°C
1
1.5
1.3
1.1
0.9
0.7
0.5
0.3
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
140
050-7236 Rev B
100
DD
160
0
200
E
on
0
includes
diode reverse recovery.
50
40
30
20
10
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
Typical Performance Curves
APT40N60B2CF(G)_LCF(G)
90%
Gate Voltage
10%
Gate Voltage
TJ125°C
td(on)
td(off)
tf
tr
TJ125°C
Drain Voltage
Drain Current
90%
90%
5%
5%
10%
10%
Drain Voltage
Switching Energy
Switching Energy
Drain Current
0
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DQ60
VDD
ID
VDS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264 (L) Package Outline (LCF)
T-MAXTM (B2) Package Outline (B2CF)
e1 SAC: Tin, Silver, Copper
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
6-2006
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7236 Rev B
Drain
Drain
20.80 (.819)
21.46 (.845)