MICROSEMI APT43M60L

APT43M60B2
APT43M60L
600V, 45A, 0.15Ω Max
N-Channel MOSFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
T-Max®
TO-264
APT43M60B2
APT43M60L
D
Single die MOSFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI/RFI
• PFC and other boost converter
• Low RDS(on)
• Buck converter
• Ultra low Crss for improved noise immunity
• Two switch forward (asymmetrical bridge)
• Low gate charge
• Single switch forward
• Avalanche energy rated
• Flyback
• RoHS compliant
• Inverters
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
45
Continuous Drain Current @ TC = 100°C
28
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
1200
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
21
A
1
160
Thermal and Mechanical Characteristics
Min
Characteristic
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
780
RθJC
Junction to Case Thermal Resistance
0.16
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
150
°C
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
300
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
MicrosemiWebsite-http://www.microsemi.com
04-2009
TL
Torque
-55
Rev D
TJ,TSTG
°C/W
0.11
050-8070
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
VBR(DSS)
Drain-Source Breakdown Voltage
ΔVBR(DSS)/ΔTJ
Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
ΔVGS(th)/ΔTJ
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
Symbol
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
3
VDS = 600V
TJ = 25°C
VGS = 0V
TJ = 125°C
Typ
Max
0.57
0.13
4
-10
0.15
5
100
500
±100
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
µA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
600
VGS = VDS, ID = 2.5mA
Threshold Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Min
VGS = 10V, ID = 21A
3
IDSS
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
APT43M60B2_L
Min
Test Conditions
VDS = 50V, ID = 21A
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Max
42
8590
90
800
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
Typ
Unit
S
pF
420
VGS = 0V, VDS = 0V to 400V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
td(off)
tf
Current Rise Time
Turn-Off Delay Time
220
215
45
90
48
55
145
44
VGS = 0 to 10V, ID = 21A,
VDS = 300V
Resistive Switching
VDD = 400V, ID = 21A
RG = 4.7Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
dv/dt
Peak Recovery dv/dt
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Min
Typ
D
Max
Unit
45
A
G
160
S
ISD = 21A, TJ = 25°C, VGS = 0V
ISD = 21A 3
diSD/dt = 100A/µs, TJ = 25°C
ISD ≤ 21A, di/dt ≤1000A/µs, VDD = 400V,
TJ = 125°C
1
700
15.2
V
ns
µC
8
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 5.44mH, RG = 4.7Ω, IAS = 21A.
04-2009
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -8.32E-8/VDS^2 + 3.49E-8/VDS + 1.30E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
050-8070
Rev D
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT43M60B2_L
70
160
V
GS
= 10V
T = 125°C
ID, DRIAN CURRENT (A)
TJ = 25°C
80
60
40
50
6V
40
30
20
5.5V
10
TJ = 150°C
TJ = 125°C
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
5V
4.5V
0
Figure 2, Output Characteristics
160
NORMALIZED TO
VDS> ID(ON) x RDS(ON) MAX.
VGS = 10V @ 21A
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
2.5
ID, DRAIN CURRENT (A)
2.0
1.5
1.0
0.5
120
100
TJ = -55°C
80
TJ = 25°C
60
TJ = 125°C
40
20
0
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
80
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
Ciss
10,000
70
TJ = -55°C
C, CAPACITANCE (pF)
60
TJ = 25°C
50
TJ = 125°C
40
30
20
1000
Coss
100
Crss
10
VGS, GATE-TO-SOURCE VOLTAGE (V)
16
10
20
30
40
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
100
200
300
400
500
600
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
12
VDS = 120V
10
VDS = 300V
8
6
VDS = 480V
4
2
0
0
160
ID = 21A
14
0
10
50
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
140
120
100
TJ = 25°C
80
60
TJ = 150°C
40
20
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
04-2009
0
ISD, REVERSE DRAIN CURRENT (A)
0
Rev D
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
3.0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
050-8070
ID, DRAIN CURRENT (A)
100
20
gfs, TRANSCONDUCTANCE
GS
60
120
0
= 7&8V
V
J
TJ = -55°C
140
APT43M60B2_L
200
200
100
100
IDM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
IDM
10
13µs
Rds(on)
100µs
1ms
1
10ms
0.1
13µs
100µs
Rds(on)
1ms
TJ = 150°C
TC = 25°C
1
10ms
Scaling for Different Case & Junction
100ms
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
DC line
100ms
TJ = 125°C
TC = 75°C
1
10
DC line
0.1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
C
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.18
D = 0.9
0.14
0.12
0.7
0.10
0.5
0.08
Note:
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.16
0.06
t1
0.3
t2
t1 = Pulse Duration
0.04
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
0.1
0.02
0.05
0
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
T-MAX® (B2) Package Outline
1.0
TO-264 (L) Package Outline
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
04-2009
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Rev D
050-8070
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
Source
2.21 (.087)
2.59 (.102)
2.29 (.090)
2.69 (.106)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.