APT32F120J 1200V, 33A, 0.32Ω Max, trr ≤430ns N-Channel FREDFET S S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. D G SO 2 T- 27 "UL Recognized" file # E145592 ISOTOP ® D APT32F120J Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 33 Continuous Drain Current @ TC = 100°C 21 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 2700 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 25 A 1 195 Thermal and Mechanical Characteristics Min Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 960 RθJC Junction to Case Thermal Resistance 0.13 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.) WT Torque Package Weight -55 150 V 2500 1.03 oz 29.2 g 10 in·lbf 1.1 N·m Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com °C 04-2009 TJ,TSTG °C/W 0.11 Rev C Characteristic 050-8090 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter VBR(DSS) Drain-Source Breakdown Voltage ΔVBR(DSS)/ΔTJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ΔVGS(th)/ΔTJ IGSS Gate-Source Leakage Current Dynamic Characteristics Symbol VDS = 1200V Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Typ Max 1.41 0.27 4 -10 0.32 5 TJ = 25°C VGS = 0V 250 1000 ±100 TJ = 125°C VGS = ±30V Unit V V/°C Ω V mV/°C µA nA TJ = 25°C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Min 1200 VGS = 10V, ID = 25A 3 IDSS Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA APT32F120J Min Test Conditions VDS = 50V, ID = 25A VGS = 0V, VDS = 25V f = 1MHz Co(cr) 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Typ 58 18200 215 1340 Max Unit S pF 520 VGS = 0V, VDS = 0V to 800V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf Current Rise Time Turn-Off Delay Time 270 560 90 265 100 60 315 90 VGS = 0 to 10V, ID = 25A, VDS = 600V Resistive Switching VDD = 800V, ID = 25A RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) Max 33 A G 195 S ISD = 25A, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C ISD = 25A 3 TJ = 25°C diSD/dt = 100A/µs TJ = 125°C Unit TJ = 25°C TJ = 125°C ISD ≤ 25A, di/dt ≤1000A/µs, VDD = 100V, TJ = 125°C 402 703 2.8 9 14 24 1.1 546 960 V ns µC A 25 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 8.64mH, RG = 25Ω, IAS = 25A. 050-8090 Rev C 04-2009 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.27E-7/VDS^2 + 1.01E-7/VDS + 1.43E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT32F120J 45 140 V GS = 10V T = 125°C J 40 V ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) 120 100 TJ = -55°C 80 60 TJ = 25°C 40 30 25 5V 20 15 10 TJ = 125°C 5 TJ = 150°C 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 3.0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 160 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. VGS = 10V @ 25A 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 140 2.5 ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 2.0 1.5 1.0 0.5 120 100 TJ = -55°C 80 TJ = 25°C 60 TJ = 125°C 40 20 0 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 70 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 30,000 TJ = -55°C 60 TJ = 25°C 50 Ciss 10,000 C, CAPACITANCE (pF) gfs, TRANSCONDUCTANCE = 6, 7, 8 & 9V GS 4.5V 20 0 35 TJ = 125°C 40 30 20 1000 Coss 100 Crss 10 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 200 400 600 800 1000 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 10 VDS = 240V 8 VDS = 600V 6 VDS = 960V 2 0 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 180 160 140 120 100 TJ = 25°C 80 60 TJ = 150°C 40 20 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 04-2009 12 4 0 200 ID = 25A 14 0 10 30 Rev C VGS, GATE-TO-SOURCE VOLTAGE (V) 16 5 050-8090 0 ISD, REVERSE DRAIN CURRENT (A) 0 APT32F120J 250 250 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 10 13µs 100µs 1ms Rds(on) 1 10ms 100ms 0.1 TJ = 125°C TC = 75°C 1 IDM 13µs 10 100µs 1ms Rds(on) TJ = 150°C TC = 25°C 1 10ms 100ms DC line Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 DC line 0.1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area C 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area D = 0.9 0.12 0.10 0.7 0.08 0.5 0.06 Note: PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 0.3 0.04 t1 t2 t1 = Pulse Duration 0.02 0 t 0.1 0.05 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1.0 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 04-2009 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) Rev C * Source 050-8090 Drain Gate Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.