MICROSEMI APT32F120J_09

APT32F120J
1200V, 33A, 0.32Ω Max, trr ≤430ns
N-Channel FREDFET
S
S
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
D
G
SO
2
T-
27
"UL Recognized"
file # E145592
ISOTOP ®
D
APT32F120J
Single die FREDFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
33
Continuous Drain Current @ TC = 100°C
21
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
2700
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
25
A
1
195
Thermal and Mechanical Characteristics
Min
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
960
RθJC
Junction to Case Thermal Resistance
0.13
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
VIsolation
RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.)
WT
Torque
Package Weight
-55
150
V
2500
1.03
oz
29.2
g
10
in·lbf
1.1
N·m
Terminals and Mounting Screws.
Microsemi Website - http://www.microsemi.com
°C
04-2009
TJ,TSTG
°C/W
0.11
Rev C
Characteristic
050-8090
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
VBR(DSS)
Drain-Source Breakdown Voltage
ΔVBR(DSS)/ΔTJ
Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
ΔVGS(th)/ΔTJ
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
Symbol
VDS = 1200V
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Typ
Max
1.41
0.27
4
-10
0.32
5
TJ = 25°C
VGS = 0V
250
1000
±100
TJ = 125°C
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
µA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
2.5
VGS = VDS, ID = 2.5mA
Threshold Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Min
1200
VGS = 10V, ID = 25A
3
IDSS
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
APT32F120J
Min
Test Conditions
VDS = 50V, ID = 25A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Typ
58
18200
215
1340
Max
Unit
S
pF
520
VGS = 0V, VDS = 0V to 800V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
td(off)
tf
Current Rise Time
Turn-Off Delay Time
270
560
90
265
100
60
315
90
VGS = 0 to 10V, ID = 25A,
VDS = 600V
Resistive Switching
VDD = 800V, ID = 25A
RG = 2.2Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min
Typ
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Max
33
A
G
195
S
ISD = 25A, TJ = 25°C, VGS = 0V
TJ = 25°C
TJ = 125°C
ISD = 25A 3
TJ = 25°C
diSD/dt = 100A/µs
TJ = 125°C
Unit
TJ = 25°C
TJ = 125°C
ISD ≤ 25A, di/dt ≤1000A/µs, VDD = 100V,
TJ = 125°C
402
703
2.8
9
14
24
1.1
546
960
V
ns
µC
A
25
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 8.64mH, RG = 25Ω, IAS = 25A.
050-8090
Rev C
04-2009
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -8.27E-7/VDS^2 + 1.01E-7/VDS + 1.43E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT32F120J
45
140
V
GS
= 10V
T = 125°C
J
40
V
ID, DRIAN CURRENT (A)
ID, DRAIN CURRENT (A)
120
100
TJ = -55°C
80
60
TJ = 25°C
40
30
25
5V
20
15
10
TJ = 125°C
5
TJ = 150°C
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
0
3.0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
160
NORMALIZED TO
VDS> ID(ON) x RDS(ON) MAX.
VGS = 10V @ 25A
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
2.5
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
2.0
1.5
1.0
0.5
120
100
TJ = -55°C
80
TJ = 25°C
60
TJ = 125°C
40
20
0
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
70
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
30,000
TJ = -55°C
60
TJ = 25°C
50
Ciss
10,000
C, CAPACITANCE (pF)
gfs, TRANSCONDUCTANCE
= 6, 7, 8 & 9V
GS
4.5V
20
0
35
TJ = 125°C
40
30
20
1000
Coss
100
Crss
10
10
15
20
25
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
200
400
600
800 1000 1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
10
VDS = 240V
8
VDS = 600V
6
VDS = 960V
2
0
100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
180
160
140
120
100
TJ = 25°C
80
60
TJ = 150°C
40
20
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
04-2009
12
4
0
200
ID = 25A
14
0
10
30
Rev C
VGS, GATE-TO-SOURCE VOLTAGE (V)
16
5
050-8090
0
ISD, REVERSE DRAIN CURRENT (A)
0
APT32F120J
250
250
100
IDM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
10
13µs
100µs
1ms
Rds(on)
1
10ms
100ms
0.1
TJ = 125°C
TC = 75°C
1
IDM
13µs
10
100µs
1ms
Rds(on)
TJ = 150°C
TC = 25°C
1
10ms
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
DC line
0.1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
C
1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
D = 0.9
0.12
0.10
0.7
0.08
0.5
0.06
Note:
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.14
0.3
0.04
t1
t2
t1 = Pulse Duration
0.02
0
t
0.1
0.05
10-5
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.0
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
04-2009
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
Rev C
* Source
050-8090
Drain
Gate
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.