Product Specification www.jmnic.com 2N5954 2N5955 2N5956 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Low collector-emitter saturation voltage ・Excellent safe operating area ・Complement to type 2N6372 2N6373 2N6374 APPLICATIONS ・Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N5954 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N5955 Open emitter 70 2N5956 50 2N5954 80 2N5955 Emitter-base voltage UNIT 90 Open base 2N5956 VEBO VALUE 60 V V 40 Open collector 5 V IC Collector current 6 A IB Base current 2 A PD Total Power Dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 4.3 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N5954 2N5955 2N5956 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5954 VCEO(sus) Collector-emitter sustaining voltage 2N5955 VBE-1 VBE-2 ICEO Collector-emitter saturation voltage Base-emitter on voltage IC=0.1A ;IB=0 Collector cut-off current MAX UNIT V 60 40 2N5954 IC=2A; IB=0.2A 2N5955 IC=2.5A; IB=0.25A 2N5956 IC=3A; IB=0.3A 2N5954 IC=2A ; VCE=4V 2N5955 IC=2.5A ; VCE=4V 2N5956 IC=3A ; VCE=4V Base-emitter on voltage TYP. 80 2N5956 VCEsat MIN IC=6A ; VCE=4V 2N5954 VCE=65V; IB=0 2N5955 VCE=45V; IB=0 2N5956 VCE=25V; IB=0 1.0 V 2.0 V 3.0 V 1.0 mA ICEV Collector cut-off current(RBE=100Ω) VCE=Rated VCE; VBE(off)=1.5V TC=150℃ 0.1 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 hFE-2 fT DC current gain 2N5954 IC=2A ; VCE=4V 2N5955 IC=2.5A ; VCE=4V 2N5956 IC=3A ; VCE=4V 20 DC current gain IC=6A ; VCE=4V 5 Transition frequency IC=1A;VCE=4V;f=1.0MHz 5 JMnic 100 MHz Product Specification www.jmnic.com 2N5954 2N5955 2N5956 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions JMnic