SavantIC Semiconductor Product Specification 2N4910 2N4911 2N4912 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·2N4912 complement to type 2N4900 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N4910 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N4911 Open emitter 60 2N4912 80 2N4910 40 2N4911 Emitter-base voltage UNIT 40 Open base 2N4912 VEBO VALUE 60 V V 80 Open collector 5 V IC Collector current 1.0 A IB Base current 1.0 A PD Total Power Dissipation 25 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 7.0 UNIT /W SavantIC Semiconductor Product Specification 2N4910 2N4911 2N4912 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N4910 VCEO(SUS) Collector-emitter sustaining voltage 2N4911 MIN TYP. MAX UNIT 40 IC=0.1A ;IB=0 V 60 80 2N4912 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 0.6 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.1A 1.3 V Base-emitter on voltage IC=1A ; VCE=1V 1.3 V 0.5 mA VBE ICEO Collector cut-off current 2N4910 VCE=20V; IB=0 2N4911 VCE=30V; IB=0 2N4912 VCE=40V; IB=0 ICEX Collector cut-off current VCE=Rated VCEO; VBE(off)=1.5V TC=150 0.1 1.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=50mA ; VCE=1V 40 hFE-2 DC current gain IC=500mA ; VCE=1V 20 hFE-3 DC current gain IC=1.0A ; VCE=1V 10 COB Output capacitance IE=0;VCB=10V;f=1MHz fT Transition frequency IC=250mA;VCE=10V;f=1MHz 2 100 100 3.0 pF MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2N4910 2N4911 2N4912