JMNIC 2N6489

JMnic
Product Specification
2N6489 2N6490 2N6491
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・Excellent safe operating area
・Complement to type 2N6486 2N6487
2N6488 respectively
APPLICATIONS
・Power amplifier and medium speed
switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2N6489
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N6490
Open emitter
Emitter-base voltage
-70
2N6491
-90
2N6489
-40
2N6490
UNIT
-50
Open base
2N6491
VEBO
VALUE
-60
V
V
-80
Open collector
-5
V
IC
Collector current
-15
A
IB
Base current
-5
A
PT
Total power dissipation
75
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
1.67
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
JMnic
Product Specification
2N6489 2N6490 2N6491
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6489
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6490
MIN
TYP.
MAX
UNIT
-40
IC=-0.2A ;IB=0
2N6491
V
-60
-80
VCEsat-1
Collector-emitter saturation voltage
IC=-5A;IB=-0.5A
-1.3
V
VCEsat-2
Collector-emitter saturation voltage
IC=-15A;IB=-5A
-3.5
V
VBE-1
Base-emitter on voltage
IC=-5A ; VCE=-4V
-1.3
V
VBE-2
Base-emitter on voltage
IC=-15A ; VCE=-4V
-3.5
V
2N6489
VCE=-45V;
VCE=-40V;TC=150℃
-0.5
-5.0
2N6490
VCE=-65V;
VCE=-60V;TC=150℃
-0.5
-5.0
2N6491
VCE=-85V;
VCE=-80V;TC=150℃
-0.5
-5.0
2N6489
VCE=-20V;IB=0
2N6490
VCE=-30V;IB=0
2N6491
VCE=-40V;IB=0
ICEX
ICEO
Collector cut-off current
VBE=-1.5V
Collector cut-off current
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-5A ; VCE=-4V
20
hFE-2
DC current gain
IC=-15A ; VCE=-4V
5
2
mA
-1.0
mA
-1.0
mA
150
JMnic
Product Specification
2N6489 2N6490 2N6491
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3