JMnic Product Specification 2SB507 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -3 A ICM Collector current-Peak -6 A IB Base current -1 A PC Collector dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ MAX UNIT 4.16 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case JMnic Product Specification 2SB507 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX Collector-emitter voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBE Base-emitter on voltage IC=-1A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -0.1 mA ICEO Collector cut-off current VCE=-60V; IB=0 -5.0 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 40 hFE-2 DC current gain IC=-0.1A ; VCE=-2V 40 Transition frequency IC=-0.5A ; VCE=-5V 5 hFE-1 Classifications C D E F 40-80 60-120 100-200 160-320 2 -60 UNIT VCEO fT PARAMETER V 320 MHz JMnic Product Specification 2SB507 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3