JMNIC 2N6030

Product Specification
www.jmnic.com
2N6029 2N6030
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2N5629 2N5630
APPLICATIONS
・For high voltage and high power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N6029
VCBO
Collector-base voltage
100
Open base
2N6030
VEBO
V
120
2N6029
Collector-emitter voltage
Emitter-base voltage
UNIT
100
Open emitter
2N6030
VCEO
VALUE
V
120
Open collector
7
V
IC
Collector current
16
A
ICM
Collector current-peak
20
A
IB
Base current
5.0
A
PD
Total Power Dissipation
200
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
0.875
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
JMnic
Product Specification
www.jmnic.com
2N6029 2N6030
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(sus)
PARAMETER
Collector-emitter
sustaining voltage
CONDITIONS
2N6029
MIN
TYP.
MAX
UNIT
100
IC=0.2A ;IB=0
2N6030
V
120
VCEsat-1
Collector-emitter saturation voltage
IC=10A; IB=1A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=16A ;IB=4A
2.0
V
VBEsat
Collector-emitter saturation voltage
IC=10A; IB=1A
1.8
V
VBE
Base-emitter on voltage
IC=8A ; VCE=2V
1.5
V
ICBO
Collector cut-off current
VCB=ratedVCBO; IE=0
1.0
mA
ICEO
Collector cut-off current
1.0
mA
ICEV
2N6029
VCE=50V; IB=0
2N6030
VCE=60V; IB=0
Collector cut-off current
(VBE(off)=1.5V)
IEBO
Emitter cut-off current
hFE-1
DC current gain
VCE=ratedVCB
1.0
VCE=ratedVCB; TC=150℃
5.0
VEB=7V; IC=0
1.0
mA
2N6029
25
100
20
80
mA
IC=8A ; VCE=2V
2N6030
hFE-2
DC current gain
IC=16A ; VCE=2V
COB
Output capacitance
IE=0 ; VCB=10V ;f=0.1MHz
fT
Transition frequency
IC=1A ; VCE=20V
JMnic
4
1000
1.0
pF
MHz
Product Specification
www.jmnic.com
2N6029 2N6030
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
JMnic