Product Specification www.jmnic.com 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5629 2N5630 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6029 VCBO Collector-base voltage 100 Open base 2N6030 VEBO V 120 2N6029 Collector-emitter voltage Emitter-base voltage UNIT 100 Open emitter 2N6030 VCEO VALUE V 120 Open collector 7 V IC Collector current 16 A ICM Collector current-peak 20 A IB Base current 5.0 A PD Total Power Dissipation 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N6029 2N6030 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(sus) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N6029 MIN TYP. MAX UNIT 100 IC=0.2A ;IB=0 2N6030 V 120 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=16A ;IB=4A 2.0 V VBEsat Collector-emitter saturation voltage IC=10A; IB=1A 1.8 V VBE Base-emitter on voltage IC=8A ; VCE=2V 1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IE=0 1.0 mA ICEO Collector cut-off current 1.0 mA ICEV 2N6029 VCE=50V; IB=0 2N6030 VCE=60V; IB=0 Collector cut-off current (VBE(off)=1.5V) IEBO Emitter cut-off current hFE-1 DC current gain VCE=ratedVCB 1.0 VCE=ratedVCB; TC=150℃ 5.0 VEB=7V; IC=0 1.0 mA 2N6029 25 100 20 80 mA IC=8A ; VCE=2V 2N6030 hFE-2 DC current gain IC=16A ; VCE=2V COB Output capacitance IE=0 ; VCB=10V ;f=0.1MHz fT Transition frequency IC=1A ; VCE=20V JMnic 4 1000 1.0 pF MHz Product Specification www.jmnic.com 2N6029 2N6030 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic