JMNIC 2SA490

JMnic
Product Specification
2SA490
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to type 2SC790
APPLICATIONS
・For power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-50
V
VCEO
Collector-emitter voltage
Open base
-40
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-3
A
IE
Emitter current
3
A
PC
Collector power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA490
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ,IB=0
-40
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10mA; IC=0
-5
V
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-0.45
-1.2
V
VBE
Base-emitter voltage
IC=-2A ; VCE=-2V
-0.85
-1.8
V
ICBO
Collector cut-off current
VCB=-30V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
40
hFE-2
DC current gain
IC=-2A ; VCE=-2V
13
COB
Collector output capacitance
IE=0 ; VCB=-10V;f=1MHz
Transition frequency
IC=-0.5A ; VCE=-2V
VCEsat
fT
‹
CONDITIONS
hFE-1 Classifications
R
O
Y
40-80
70-140
120-240
2
MIN
TYP.
UNIT
240
50
150
3
MAX
pF
MHz
JMnic
Product Specification
2SA490
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3