JMNIC 2SB697K

JMnic
Product Specification
2SB697 2SB697K
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2SD733/733K
・High power dissipation
APPLICATIONS
・Power amplifier applications
・Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
导体
半
电
固
Absolute maximum ratings(Ta=℃)
SYMBOL
D
N
O
IC
PARAMETER
CONDITIONS
M
E
S
E
G
N
HA
2SB697
VCBO
VCEO
Collector-base voltage
INC
2SB697K
2SB697
Collector-emitter voltage
Emitter-base voltage
VALUE
UNIT
-160
Open emitter
V
-180
-140
Open base
2SB697K
VEBO
R
O
T
UC
V
-160
Open collector
-6
V
IC
Collector current
-12
A
ICM
Collector current-peak
-20
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-40~150
℃
TC=25℃
JMnic
Product Specification
2SB697 2SB697K
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SB697
V(BR)CEO
V(BR)CBO
Collector-emitter
breakdown voltage
VCEsat
VBE
ICBO
-160
2SB697
-160
IC=-5mA ;IE=0
IE=-5mA ;IC=0
Collector-emitter saturation voltage
IC=-6A; IB=-0.6A
固
V
-180
Emitter-base breakdown voltage
导体
半
电
-6
V
-1.0
IC=-1A ; VCE=-5V
VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
40
hFE-2
DC current gain
IC=-5A ; VCE=-5V
20
Transition frequency
IC=-1A ; VCE=-5V
D
N
O
EMIC
S
E
G
HAN
hFE-1 Classifications
C
D
E
F
40-80
60-120
100-200
160-320
2
-2.5
V
-1.5
V
R
O
T
UC
Collector cut-off current
‹
UNIT
V
2SB697K
Base-emitter on voltage
fT
MAX
IC=-50mA ;IB=0
Collector-emitter
breakdown voltage
INC
TYP.
-140
2SB697K
V(BR)EBO
MIN
-0.1
mA
-0.1
mA
320
15
MHz
JMnic
Product Specification
2SB697 2SB697K
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
INC
R
O
T
UC
D
N
O
EMIC
S
E
G
HAN
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3