JMnic Product Specification 2SA877 2SA878 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2SA877 VCBO Collector-base voltage -80 Open base 2SA878 VEBO Emitter-base voltage V -120 2SA877 Collector-emitter voltage UNIT -80 Open emitter 2SA878 VCEO VALUE V -120 Open collector -6 V -10 A 100 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA877 2SA878 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA877 V(BR)CEO Collector-emitter breakdown voltage VCEsat MAX V -120 IE=-1mA ;IC=0 Collector-emitter saturation voltage IC=-5A; IB=-0.5A -6 V -2.0 V -0.1 mA -0.1 mA VCB=-80V; IE=0 Collector cut-off current 2SA878 UNIT -80 Emitter-base breakdown voltage 2SA877 ICBO TYP. IC=-0.1A ;IB=0 2SA878 V(BR)EBO MIN VCB=-120V; IE=0 IEBO Emitter cut-off current VEB=-6V; IC=0 hFE DC current gain IC=-3A ; VCE=-4V COB Output capacitance IE=0 ; VCB=-10V; f=1.0MHz 255 pF fT Transition frequency IC=-1A ; VCE=-12V 15 MHz 2 50 JMnic Product Specification 2SA877 2SA878 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3