JMNIC 2SA878

JMnic
Product Specification
2SA877 2SA878
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・High power dissipation
APPLICATIONS
・Power amplifier applications
・Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2SA877
VCBO
Collector-base voltage
-80
Open base
2SA878
VEBO
Emitter-base voltage
V
-120
2SA877
Collector-emitter voltage
UNIT
-80
Open emitter
2SA878
VCEO
VALUE
V
-120
Open collector
-6
V
-10
A
100
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA877 2SA878
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA877
V(BR)CEO
Collector-emitter
breakdown voltage
VCEsat
MAX
V
-120
IE=-1mA ;IC=0
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-6
V
-2.0
V
-0.1
mA
-0.1
mA
VCB=-80V; IE=0
Collector cut-off current
2SA878
UNIT
-80
Emitter-base breakdown voltage
2SA877
ICBO
TYP.
IC=-0.1A ;IB=0
2SA878
V(BR)EBO
MIN
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-3A ; VCE=-4V
COB
Output capacitance
IE=0 ; VCB=-10V; f=1.0MHz
255
pF
fT
Transition frequency
IC=-1A ; VCE=-12V
15
MHz
2
50
JMnic
Product Specification
2SA877 2SA878
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3